38results about How to "Large output voltage" patented technology

A transimpedance amplifier, which is useful as an optical fiber preamplifier, is disclosed. The illustrative embodiment exhibits four characteristics. First, it minimizes the equivalent input noise current. Second, it has a wide bandwidth. Third, it has a reasonably large output voltage, and fourth, it is stable over wide temperature and voltage ranges. The illustrative embodiment comprises a transimpedance stage and a gain stage. Both stages employ a pure NMOS design which contributes to the above four advantages. Bandwidth is further increased over the prior art by the use of inductive loads. The inductive loads of the illustrative embodiment are not physical inductors, but transistor-based “active” inductors: the combination of a resistor connected in series with the gate of an NMOS transistor.

The invention discloses a super-wide output voltage range charger based on LLC topology and a control method. The super-wide output voltage range charger comprises an LLC resonant converter and a control circuit. The LLC resonant converter comprises a switch network composed of an MOSFET full-bridge conversion circuit, the input end of the switch network is connected with the input end of a power source, the output end of the switch network is connected with the input end of a resonant network, the output end of the resonant network is connected with a leakage inductor of a transformer, and a secondary side coil of the transformer is connected with a rectifying and filtering network; the control circuit comprises a control unit, the control unit controls MOS tubes of the MOSFET full-bridge conversion circuit to be connected or disconnected according to received signals at the input end and the output end of the LLC resonant converter, and therefore the LLC resonant converter can achieve no-voltage connection of a primary side switch tube and no-current disconnection of a secondary side rectifying diode within a full voltage range. The super-wide output voltage range charger is wide in output voltage, free of limitation of the input voltage range of a charged object and capable of charging various new energy electric vehicles.

An electronic apparatus (1) for training an animal is supported against the animal's skin, and includes stimulus electrodes (5) for electrically contacting the skin. A controller including output terminals producing aversive stimulus control signals, a first switch (Q4) coupled to a winding to produce therein a burst of first current pulses in response to a first signal produced by the controller (33) and a second switch (Q2) coupled to the first switch (Q4) operative to synchronously shunt predetermined trailing portions of the first current pulses away from the winding in response to a second signal produced by the controller to reduce the amount of energy delivered to the winding by the switching transistor (Q4) without substantially changing a peak value of a flyback voltage across the winding. The controller sets various values of time intervals during which portions of the first current pulses are shunted away from the winding in order to set various corresponding intensities of aversive stimulus.

A tandem rotary electric machine, to be applicable to various types of mobile bodies such as vehicles, is equipped with a primary rotary electric machine and a secondary rotary electric machine arranged in tandem mechanism. In the tandem rotary electric machine, heat energy generated by positive diodes and negative diodes forming one or more rectifier devices is dissipated to a stator core of the secondary rotary electric machine. The stator core of the secondary rotary electric machine acts as a heat sink through the housing. The stator core of the secondary rotary electric machine has a less frequency use, and a large size and a large weight than those of the primary rotary electric machine of high frequent and normal is used as a heat sink in order to prevent the temperature rise of the positive diode and the negative diode of the rectifier devices.

A charge pump circuit has: first and second charge pump circuits alternately performing boosting operations; and a control circuit. The first (second) charge pump circuit has: plural stages of first (second) switch transistors connected in series; plural stages of first (second) connection nodes respectively connected to sources of the first (second) switch transistors; and plural stages of first (second) capacitors respectively connected to the first (second) connection nodes. The control circuit has: plural stages of first inverters and plural stages of second inverters. The n-th-stage first (second) inverter is supplied with a positive-side power supply voltage from the (n−1)-th-stage second (first) connection node, is supplied with a negative-side power supply voltage from the n-th-stage first (second) connection node, is supplied with an input voltage from the (n−1)-th-stage first (second) connection node, and outputs an output voltage to a gate of the n-th-stage first (second) switch transistor.

An electronic apparatus (1) for training an animal is supported against the animal's skin, and includes stimulus electrodes (5) for electrically contacting the skin. A controller including output terminals producing aversive stimulus control signals, a first switch (Q4) coupled to a winding to produce therein a burst of first current pulses in response to a first signal produced by the controller (33) and a second switch (Q2) coupled to the first switch (Q4) operative to synchronously shunt predetermined trailing portions of the first current pulses away from the winding in response to a second signal produced by the controller to reduce the amount of energy delivered to the winding by the switching transistor (Q4) without substantially changing a peak value of a flyback voltage across the winding. The controller sets various values of time intervals during which portions of the first current pulses are shunted away from the winding in order to set various corresponding intensities of aversive stimulus.

A transimpedance amplifier, which is useful as an optical fiber preamplifier, is disclosed. The illustrative embodiment exhibits four characteristics. First, it minimizes the equivalent input noise current. Second, it has a wide bandwidth. Third, it has a reasonably large output voltage, and fourth, it is stable over wide temperature and voltage ranges. The illustrative embodiment comprises a transimpedance stage and a gain stage. Both stages employ a pure NMOS design which contributes to the above four advantages. Bandwidth is further increased over the prior art by the use of inductive loads. The inductive loads of the illustrative embodiment are not physical inductors, but transistor-based “active” inductors: the combination of a resistor connected in series with the gate of an NMOS transistor.

A method for inspecting magnetic characteristics of a thin film magnetic head that is arranged in a row bar includes: a step of preparing a row bar having sliders including a thin film magnetic head formed therein and lapping guides having magnetoresistance effect; a step of preparing a magnetic field applying row bar having first and second magnetic field applying elements; a first positioning step in which said magnetic field applying row bar is arranged opposite to said row bar; a second positioning step in which a relative movement between said magnetic field applying row bar and said row bar is made so that at least one of said lapping guides exhibits a largest output voltage; and a measurement step in which a relationship between the intensity of the magnetic field and an output voltage of a magnetic field sensor is obtained.

A method for inspecting magnetic characteristics of a thin film magnetic head that is arranged in a row bar includes: a step of preparing a row bar having sliders including a thin film magnetic head formed therein and lapping guides having magnetoresistance effect; a step of preparing a magnetic field applying row bar having first and second magnetic field applying elements; a first positioning step in which said magnetic field applying row bar is arranged opposite to said row bar; a second positioning step in which a relative movement between said magnetic field applying row bar and said row bar is made so that at least one of said lapping guides exhibits a largest output voltage; and a measurement step in which a relationship between the intensity of the magnetic field and an output voltage of a magnetic field sensor is obtained.

A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.

A piezoelectric contact-type microphone structure is provided. With this structure, the piezoelectric element directly touches the speaker's skin without the intervening sponge or spring to fully pick up the skin vibration and to avoid high-frequency attenuation. The structure also provides an ample room for the piezoelectric element to undergo full structural change. The structure avoids the low-frequency distortion resulted from a resonance structure formed by the piezoelectric element, the sponge or spring, and the casing of the microphone. A microphone using this structure has a flat frequency response and a superior performance both for high- and low-frequency voice signals.

It is described a high efficiency rectification stage using dynamic threshold MOSFET. The idea is to use the input signal to reduce the threshold voltage when the transistor has to be on, and to increase the threshold when the transistor has to be off. This allows reducing both the resistive losses and the leakage current. A matching network allows the generation of a second higher voltage signal to drive the control gates and the bulk, i.e. the wells, of the transistors. Further, a self-tuned front-end is provided to extend the bandwidth of the high-Q charge pump.

The invention relates to a cantilever beam oscillating ferroelectric generator. The current piezoelectric generator has low generating efficiency. And the invention comprises a metal cantilever beam, a mass block, a base, a ferroelectric film and an accumulator circuit. The base can oscillate up and down, one end of the strip metal cantilever beam is fixedly connected with the base and the other end thereof is fixedly connected with the mass block. The upper surface and the lower surface of the metal cantilever beam are respectively provided with the ferroelectric films in array, the top and the bottom of each ferroelectric film are provided with electricity collecting points in matrix, all collecting points on the top thereof are connected with top electrode wires by conductors, and all collecting points on the bottom thereof are connected with bottom electrode wires by the conductors. The top electrode wires are connected with one end input by the accumulator circuit, the bottom electrode wires are connected with the other end input by the accumulator circuit. Because the invention adopts the ferroelectric material as an electromechanical converter of the generator, susceptiveness is largely improved and larger output voltage and generation efficiency can be obtained.

Increasing the output signal from CPP GMR devices by increasing the read current has not previously been considered an option because it would make the device run too hot. This problem has been overcome by using, for the upper and lower leads, materials that differ significantly in their thermoelectric powers. Thus, when DC is passed through the device, from − to + TEP leads, hot and cold junctions are formed and heat is transferred from the micro-device into the leads, resulting in a net local cooling of the device which enables it to operate at higher power. For a GMR device, this translates to a larger output voltage, making it easier, more sensitive, and more reliable to use.

A tandem rotary electric machine, to be applicable to various types of mobile bodies such as vehicles, is equipped with a primary rotary electric machine and a secondary rotary electric machine arranged in tandem mechanism. In the tandem rotary electric machine, heat energy generated by positive diodes and negative diodes forming one or more rectifier devices is dissipated to a stator core of the secondary rotary electric machine. The stator core of the secondary rotary electric machine acts as a heat sink through the housing. The stator core of the secondary rotary electric machine has a less frequency use, and a large size and a large weight than those of the primary rotary electric machine of high frequent and normal is used as a heat sink in order to prevent the temperature rise of the positive diode and the negative diode of the rectifier devices.

A DC-DC Buck circuit has a DC input terminal, a DC output terminal, a ground terminal, an inductor, a capacitor, a sampling resistor, a PWM control chip and a DrMOS chip. The output of the driver pin of the PWM control chip is unrelated to the voltage between the inductor and the sampling resistor. The DC-DC Buck circuit can produce a larger output voltage while also being compatible with a DrMOS chip.

A magneto-resistance effect element (MR element) used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first non-magnetic metal layer, a semiconductor layer, and a second non-magnetic metal layer. The first non-magnetic metal layer and the second non-magnetic metal layer comprise CuPt films having a thickness ranging from a minimum of 0.2 nm to a maximum of 2.0 nm, and the Pt content ranges from a minimum of 5 at % to a maximum of 25 at %. The semiconductor layer comprises a ZnO film, ZnS film, or GaN film having a thickness ranging from a minimum of 1.0 nm to a maximum of 2.5 nm.

An optical receiver having a photodetector, amplifier, feedback loop, and output circuit is disclosed. The photodetector generates a current between first and second nodes in response to being illuminated with light. The amplifier has an input connected to the first node and an output connected to a third node. The feedback path connects the third node to the first node, and includes a diode in series with a circuit element having an impedance greater than a predetermined value, the diode is connected between the first and fourth nodes. The output circuit is connected to the fourth node and provides an output signal to an external circuit. The output circuit can be configured to provide an output signal that is proportional to the logarithm of the intensity of the light that illuminates the photodetector.

There is provided a charge detecting device that can convert an accumulated charge to a voltage at a low voltage and a high efficiency, and has a large dynamic range of an output voltage and satisfactory linearity of a conversion efficiency. The charge detecting device includes a charge accumulating portion including a low concentration N-type (N−) layer 108 formed in a P-type well 101 and a high concentration N-type (N+) layer formed between the N− layer and a principal surface. The N+ layer is connected to an input terminal of an amplifying transistor of an output circuit, and after a reverse bias is applied to the N+ layer during discharging of the accumulated charge, the entire N− layer is depleted at least until a saturated charge is accumulated.

In order to minimize noise and current consumption in a hearing aid, an input converter comprising a first voltage transformer and an analog-to-digital converter of the delta-sigma type for a hearing aid is devised. The analog-to-digital converter of the input converter has an input stage, an output stage, and a feedback loop, and the input stage comprises an amplifier (QA) and an integrator (RLF). The first voltage transformer (IT) has a transformation ratio such that it provides an output voltage larger than the input voltage and is placed in the input converter upstream of the input stage. A second voltage transformer (OT) having a transformation ratio such that it provides an output voltage larger than the input voltage, is optionally placed in the feedback loop of the converter. The voltage transformers (IT, OT) are switched-capacitor voltage transformers, each transformer (IT, OT) having at least two capacitors (Ca, Cb, Cc, Cd). The invention further provides a method of converting an analog signal.

A magneto-resistance effect element used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first and second non-magnetic metal layer, and a semiconductor layer. The first and second non-magnetic metal layer and comprise CuPt films having a thickness of more than 0 nm but no more than 2.0 nm, and the Pt content ranges from a minimum of 5 to a maximum of 25 at %.

The power supply apparatus includes an inductor; a switching element connected to another end of the inductor, the switching element configured to drive the inductor by being turned on or turned off in accordance with an input pulse signal; a boost converter circuit connected to both ends of the inductor and including a plurality of rectification units, the boost converter circuit configured to amplify a voltage generated in the inductor, each of the plurality of rectification units including a diode and a capacitor; and a voltage boosting element configured to supply a voltage obtained by boosting an input voltage to the inductor.

A power reception device of a non-contact power feeding device has: a resonant circuit having a reception coil configured to receive electric power from a power transmission device and a resonant capacitor connected in series with the reception coil; a first rectifier circuit configured to rectify electric power received via the resonant circuit; a smoothing capacitor connected to the first rectifier circuit and configured to smooth a voltage outputted from the first rectifier circuit; a sub-coil arranged to be capable of being electromagnetically coupled to the reception coil; and a second rectifier circuit connected between the sub-coil and the smoothing capacitor, and configured to output electric power according to a voltage generated in the sub-coil to the smoothing capacitor in response to a voltage obtained by rectifying a voltage generated in the sub-coil being higher than a voltage between both terminals of the smoothing capacitor.

The disclosed embodiments aim to improve upon existing multi stage generators for providing power to a load. In particular, embodiments of the invention include a regulator situated between the output of a pilot exciter and the main exciter of a multi stage generator system, the regulator arranged to limit the voltage available to a field current control element which sets the field current supplied to the main exciter.

A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction perpendicular to layer surfaces via a lower shield layer and an upper shield layer. The pinned layer comprises an outer layer having a fixed magnetization direction, a nonmagnetic intermediate layer, and an inner layer in the form of a ferromagnetic layer. The spacer layer comprises a first nonmagnetic metal layer, a semiconductor layer made of ZnO, and a second nonmagnetic metal layer. The inner layer or the outer layer includes a diffusion blocking layer made of an oxide of an element whose electronegativity is equal to or smaller than Zn, e.g., ZnO, TaO, ZrO, MgO, TiO, or HfO, or made of RuO.

An optical receiver having a photodetector, amplifier, feedback loop, and output circuit is disclosed. The photodetector generates a current between first and second nodes in response to being illuminated with light. The amplifier has an input connected to the first node and an output connected to a third node. The feedback path connects the third node to the first node, and includes a diode in series with a circuit element having an impedance greater than a predetermined value, the diode is connected between the first and fourth nodes. The output circuit is connected to the fourth node and provides an output signal to an external circuit. The output circuit can be configured to provide an output signal that is proportional to the logarithm of the intensity of the light that illuminates the photodetector.

An enhancement mode GaN FET based gate driver circuit including an active pre-driver to drive a high-slew rate, high current output stage GaN FET. Due to the active driver current from the pre-driver, the output stage pull-up FET can turn on faster as compared to a pre-driver that utilizes a passive pull-up load. The active pre-driver must provide a voltage to drive the gate of the output stage pull-up FET which is higher than the normal supply voltage to enable the maximum output level of the driver FET to approach the normal supply voltage. A feedback circuit is included in the active pre-driver to avoid the need for two supply voltages.

The power supply apparatus includes an inductor; a switching element connected to another end of the inductor, the switching element configured to drive the inductor by being turned on or turned off in accordance with an input pulse signal; a boost converter circuit connected to both ends of the inductor and including a plurality of rectification units, the boost converter circuit configured to amplify a voltage generated in the inductor, each of the plurality of rectification units including a diode and a capacitor; and a voltage boosting element configured to supply a voltage obtained by boosting an input voltage to the inductor.