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RF power amplifier

A power amplifier, power amplification technology, applied in power amplifiers, amplifiers, improving amplifiers to improve efficiency, etc., can solve the problems of reducing the size and weight of portable terminals, increasing the size and weight of portable terminals, etc.

Inactive Publication Date: 2008-01-02
RENESAS TECH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this results in an increase in the size and weight of the portable terminal
If a high-frequency amplifier (multimode amplifier) ​​that supports two or more communication systems and has improved efficiency is realized to solve this problem, it is possible to reduce the size and weight of portable terminals

Method used

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Embodiment A

[0189] Fig. 18 is a block diagram showing a high-frequency power amplifier of Embodiment A related to the present invention. The high-frequency power amplifier 100 of embodiment A includes: a plurality of power amplifiers (AMP1) 110 and (AMP2) 111 that are arranged in parallel (using two power amplifiers as an example here); Bias control circuits (Bias_cont1) 112 and (Bias_cont2) 113 each control a corresponding one of the plurality of power amplifiers 110 and 111 in a bias according to a modulation method of an input signal. Power amplifiers 110 and 111 each have an input terminal connected to high-frequency signal input terminal 101 through a signal distribution section, and an output terminal connected to high-frequency signal output terminal 102 through a signal synthesis section. The bias control circuits 112 and 113 each have an input terminal connected to the modulation signal information input terminal 105 , and an output terminal connected to a control terminal of a c...

Embodiment B

[0196] Fig. 21 is a block diagram showing a high-frequency power amplifier of Embodiment B of the present invention. The high frequency power amplifier 200 of this embodiment comprises: power amplifier (AMP1) 210 and (AMP2) 211; Bias control circuit (Bias_cont1) 212 and (Bias_cont2) 213; High frequency signal input end 201; And high frequency signal output end 202. In addition, this high-frequency power amplifier has an RF_IC unit (MOD RF_IC) 214 including a signal modulation unit and a signal source (Signal) 215 externally connected thereto.

[0197]In the high-frequency power amplifier 200 of this embodiment, the RF_IC section 214 including the signal modulation section supplies modulated signal information. A high-frequency signal to be input to the high-frequency signal input terminal 201 of the high-frequency power amplifier 200 is sent from an external signal source 215 to the input terminal through the RF_IC section 214 . Other operations are the same as those of the ...

Embodiment C

[0200] Fig. 22 is a block diagram showing a high-frequency power amplifier of Embodiment C of the present invention. The high-frequency power amplifier 300 of this embodiment includes: power amplifiers (AMP1) 310 and (AMP2) 311; bias control circuits (Bias_cont1) 312 and (Bias_cont2) 313; distribution parameter lines (TRL_IN1) 303, (TRL_OUT1) 304 and (TRL_OUT2) 305; a high-frequency signal input terminal 301; and a high-frequency signal output terminal 302. In addition, this high-frequency power amplifier has an RF_IC unit (MOD RF_IC) 314 including a signal modulation unit and a signal source (Signal) 315 externally connected thereto.

[0201] For the high-frequency power amplifier 300 of this embodiment, as in the case of the embodiment B shown in FIG. sent to the input. Therefore, the power amplifier obtains modulation signal information from the RF_IC section 314 . In addition, a delay line composed of the distributed parameter line 303 is used for the input section of t...

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Abstract

The RF power amplifier includes first and second amplifiers Q 1 and Q 2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q 1 and Q 2 are formed on one semiconductor chip. The first bias voltage Vg 1 of the amplifier Q 1 is set to be higher than the second bias voltage Vg 2 of the amplifier Q 2 so that the amplifier Q 1 is operational between Class B and AB, and Q 2 is operational in Class C. The first effective device size Wgq 1 of the amplifier Q 1 is intentionally set to be smaller than the second effective device size Wgq 2 of the amplifier Q 2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.

Description

[0001] priority claim [0002] This application claims priority to Japanese applications JP2006-168285 filed on June 19, 2006, JP2006-175374 filed on June 26, 2006, and JP2007-145009 filed on May 31, 2007, the The contents are incorporated in this application by reference. technical field [0003] The present invention relates to an RF power amplifier for RF transmission, which may be included in a communication terminal tool, such as a portable telephone terminal for communication with a base station or used in a base station. In particular, it relates to a technique that facilitates improving power efficiency by means of two or more final stage power amplification devices in an RF power amplifier. The term "high frequency power amplifier" is herein equivalent to the term "RF power amplifier". Background technique [0004] Various communication systems are currently used throughout the world. These communication systems are not necessarily the same because old and new co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/20H03F3/24H03F1/02H03F1/07H04B1/04
CPCH03F3/604H03F1/0288
Inventor 藤岡彻清水敏彦大西正己松本秀俊田中聪
Owner RENESAS TECH CORP
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