The invention provides a self-biased
ultra wideband low-power-consumption low-
noise amplifier (LNA) and belongs to the field of
radio frequency integrated circuits. The LNA only contains a low-frequency
amplifier stage and a high-frequency
amplifier stage. At the low-frequency amplifier stage of the LNA, an
active load is combined with the resistive
negative feedback technology to provide bias for a circuit at the same stage and a circuit at a backward stage, self-bias of the overall LNA circuit is achieved, the
circuit design is simplified, and circuit
power consumption is restrained. According to the structural features of the circuit, and high-
frequency matching and
noise performance of the circuit are optimized by fully utilizing parasitic
inductance of bonding wires. At the high-frequency amplifier stage, the working frequency range of the LNA is expanded through the
inductance peaking technology. The LNA can stably work within the frequency range of 0.2-6 GHz, and
gain of 16+ / -1.3 dB, the
noise coefficient smaller than 2-8 dB and good input matching are maintained. The self-biased
ultra wideband low-power-consumption LNA can be applied to
receiver front-end chips applied to
digital broadcasting,
wireless local area networks, ultrashort wave radars and other devices.