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59 results about "Tuned amplifier" patented technology

A tuned amplifier is an electronic amplifier which includes bandpass filtering components within the amplifier circuitry. They are widely used in a variety of wireless applications.

Low-noise amplifier and a front-end system with same

The invention discloses a low-noise amplifier and a TD-SCDMA (time division-synchronous code division multiple access) radio-frequency front-end system with the same. Antenna receiving comprises a useful signal and a signal interfering signals. Firstly, matching processing is carried out on the useful signal through an input matching network and a blocker interference suppression network, and blocker interference is realized, so as to present high-impedance suppression; and then amplification processing is carried out on the signal through a core amplification tube of the low-noise amplifier; and finally frequency selection is carried out on the useful signal through outputting an LC frequency selection network, so as to output a non-interference signal; the blocker suppression network is designed in the low-noise amplifier, so as to displace an SAW (surface acoustic wave) filter outside a chip, and the blocker suppression network is combined with the input matching network; the received interference signals are filtered out from the LNA (low-noise amplifier), thus realizing the purposes that the interference signals are filtered out, simultaneously the area of the chip is reduced, the system power consumption is lowered, and the system performance is improved.
Owner:LEADCORE TECH

Self-biased ultra wideband low-power-consumption low-noise amplifier (LNA)

The invention provides a self-biased ultra wideband low-power-consumption low-noise amplifier (LNA) and belongs to the field of radio frequency integrated circuits. The LNA only contains a low-frequency amplifier stage and a high-frequency amplifier stage. At the low-frequency amplifier stage of the LNA, an active load is combined with the resistive negative feedback technology to provide bias for a circuit at the same stage and a circuit at a backward stage, self-bias of the overall LNA circuit is achieved, the circuit design is simplified, and circuit power consumption is restrained. According to the structural features of the circuit, and high-frequency matching and noise performance of the circuit are optimized by fully utilizing parasitic inductance of bonding wires. At the high-frequency amplifier stage, the working frequency range of the LNA is expanded through the inductance peaking technology. The LNA can stably work within the frequency range of 0.2-6 GHz, and gain of 16+/-1.3 dB, the noise coefficient smaller than 2-8 dB and good input matching are maintained. The self-biased ultra wideband low-power-consumption LNA can be applied to receiver front-end chips applied to digital broadcasting, wireless local area networks, ultrashort wave radars and other devices.
Owner:NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP

Differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with on-chip active Balun

The invention belongs to the technical field of radio frequency integration circuits and particularly relates to a differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with an on-chip active Balun. In the differential CMOS multimode low-noise amplifier, a first-level amplifier consists of a matching level, an amplifying level, a feedback level and a load level; a second-level amplifier consists of the active on-chip Balun; the matching level forms a matching network by using a bonding wire inductor, a parasitic capacitor, a grid inductor and circuit input impedance; in the amplifying level, a common-source NMOS tube and a PMOS tube are used as input ends, and a common-gate NMOS tube is used as a current follower; an NMOS tube between the grid of an input NMOS tube and the drain of the NMOS tube of the current follower and a resistor form a voltage-current type negative feedback access; and the active Balun of a third-level amplifier realizes single-to-dual function of the Balun by using a common source and a source follower respectively. The differential CMOS multimode low-noise amplifier has a simple structure, low power consumption and large bandwidth coverage range, occupies a small area of a chip and improves the practicability of a circuit. The low-noise amplifier can be applied to front ends of multimode receivers with frequencies of 0.5 to 10.6GHz.
Owner:FUDAN UNIV
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