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Differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with on-chip active Balun

A low-noise amplifier, amplifying stage technology, used in differential amplifiers, DC-coupled DC amplifiers, improved amplifiers to reduce noise effects, etc., to achieve the effect of reduced demand, small chip area, and good noise figure

Inactive Publication Date: 2012-01-25
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, unlike the traditional narrowband LNA, the ultra-broadband LNA covering 0.5~10.6GHz that satisfies multiple communication modes has a bandwidth up to more than ten GHz, and maintains good input matching, gain flatness and low Noise is also a difficult performance requirement

Method used

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  • Differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with on-chip active Balun
  • Differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with on-chip active Balun
  • Differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with on-chip active Balun

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Embodiment Construction

[0033] The present invention will be further described below by way of embodiments and in conjunction with the accompanying drawings.

[0034] Such as Figure 6 As shown, the example circuit is the application of a differential CMOS LNA with on-chip active Balun in a multimode RF receiver. Its operating frequency range is 0.5~10.6GHz, and it is compatible with various standards such as GSM, WCDMA, Bluetooth, WLAN, and UWB. .

[0035]The circuit works at 1.2V and consumes 10.8mA. Circuit performance: input matching S11≤-10dB, noise figure NF 2.6~2.8dB, gain S21 14~17dB, covering frequency band 0.5~10.6GHz, the best linearity is -4dBm, it can be seen that the circuit has good broadband performance.

[0036] Finally, it should be noted that the above is only used to illustrate the technical solution of the present invention rather than limit it. Those of ordinary skill in the art should understand that the technical solution of the present invention can be modified or equivalen...

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Abstract

The invention belongs to the technical field of radio frequency integration circuits and particularly relates to a differential complementary metal oxide semiconductor (CMOS) multimode low-noise amplifier with an on-chip active Balun. In the differential CMOS multimode low-noise amplifier, a first-level amplifier consists of a matching level, an amplifying level, a feedback level and a load level; a second-level amplifier consists of the active on-chip Balun; the matching level forms a matching network by using a bonding wire inductor, a parasitic capacitor, a grid inductor and circuit input impedance; in the amplifying level, a common-source NMOS tube and a PMOS tube are used as input ends, and a common-gate NMOS tube is used as a current follower; an NMOS tube between the grid of an input NMOS tube and the drain of the NMOS tube of the current follower and a resistor form a voltage-current type negative feedback access; and the active Balun of a third-level amplifier realizes single-to-dual function of the Balun by using a common source and a source follower respectively. The differential CMOS multimode low-noise amplifier has a simple structure, low power consumption and large bandwidth coverage range, occupies a small area of a chip and improves the practicability of a circuit. The low-noise amplifier can be applied to front ends of multimode receivers with frequencies of 0.5 to 10.6GHz.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuits, in particular to a differential CMOS multimode low noise amplifier. Background technique [0002] Multi-mode RF receiver systems are currently a research hotspot in academia and industry. The compatibility of multiple communication modes is realized through a single receiver link, which can reduce the power consumption of the whole machine and the area of ​​the chip at the same time. [0003] The low-noise amplifier is one of the most critical modules in the front-end of the receiver. Its function is to amplify the weak signal received by the antenna and suppress the noise of the receiver's post-stage circuit. This requires that the low-noise amplifier must provide sufficient gain, and at the same time ensure that the noise of the subsequent stage will not have an excessive impact on the system performance. The gain of the low noise amplifier is often directly propor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/45H03F1/32H03F1/26
Inventor 任俊彦张楷晨廉琛李巍李宁许俊叶凡
Owner FUDAN UNIV
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