Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation

A low-noise amplifier, ultra-wideband technology, applied in high-frequency amplifiers, improving amplifiers to expand bandwidth, improving amplifiers to reduce noise effects, etc. , the effect of easy to test alone

Inactive Publication Date: 2012-06-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Traditional wideband LNAs such as figure 1 As shown, the circuit is a broadband low-noise amplifier with an active feedback structure (the NMOS transistor of the following device is represented by MN, and the device PMOS transistor is represented by MP), and the devices MN1 and MN2 constitute the cascode amplifier stage of the circuit, and RL is the load of the amplifier , devices Rf and MN4 provide active feedback for the low noise amplifier to achieve input

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  • Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation
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  • Radio-frequency ultra-wideband low-noise amplifier based on inductance compensation

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Embodiment Construction

[0033] Combine below figure 2 The ultra-wideband low-noise amplifier of the present invention is further described.

[0034] The ultra-wideband low-noise amplifier of the present invention is mainly composed of an input amplification stage, a feedback stage, a matching stage, a load stage, a bias stage and an output buffer stage circuit. The connection relationship and functions of each part are as follows:

[0035] The power supply voltage VDD is 1.2V, and GND is 0V;

[0036] The input amplification stage is composed of NMOS transistors MN1, MN2 and PMOS transistor MP1 to realize the amplification function of the input signal. The source of MN1 is grounded, and the drain is connected to the drain of MP1 and the source of MN2 respectively. The source is connected to the power supply VDD;

[0037] The feedback stage is composed of NMOS transistor MN3, resistor Rf, and DC blocking capacitors C1 and C2. The drain of MN3 is connected to the power supply VDD, the gate is connected...

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Abstract

The invention discloses a radio-frequency ultra-wideband low-noise amplifier based on inductance compensation, relating to a radio-frequency integrated circuit technology. The radio-frequency ultra-wideband low-noise amplifier mainly consists of an input amplification-stage circuit, a feedback-stage circuit, a matching-stage circuit, a load-stage circuit, a bias-stage circuit and an output buffering-stage circuit jointly. According to the radio-frequency ultra-wideband low-noise amplifier, both the input matching stage and the load stage are subjected to inductance compensation, and the sensitivity of the low-noise amplifier on the technology is reduced by adopting a current multiplexing technology with independent bias, so that the performance is more stable, the ultra-wideband is also realized, and the working frequency range is 0.1-12GHz; meanwhile, the radio-frequency ultra-wideband low-noise amplifier gets favorable indexes, such as noise, linearity, gain, power consumption and the like and is suitable for an ultra-wideband multi-standard wireless communication receiving system.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuit design, is applied to a radio frequency front end of a receiver, is an ultra-wideband low-noise amplifier applicable to various wireless communication standards, and is suitable for an ultra-wideband receiver system. Background technique [0002] With the development of the electronic information industry, circuit integration has become a common research direction for talents in the microelectronics industry, and the position of radio frequency chips in the communication field is irreplaceable. In the radio frequency receiver, the low noise amplifier is generally used as the first stage of the receiver, and its operating frequency is often very high, and the reflection characteristics of the wave need to be considered; at the same time, the low noise amplifier needs to provide enough gain to overcome the noise caused by the subsequent circuit. The quality of the noise ch...

Claims

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Application Information

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IPC IPC(8): H03F1/42H03F1/26H03F3/189
Inventor 刘洋杨帆于奇张小龙吴洪天徐汝云
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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