Full-difference CMOS ultra wide band low-noise amplifier

Abstract

The invention relates to a full-difference CMOS ultra wide band low-noise amplifier which can be applied in the ultra wide band of 3.1-4.8GHz and 3.1-10.6GHz or can be applied in cognitive radio frequency front end of 900MHz-6GHz. The amplifier is based on common-source transconductance input and resistance negative feedback structure and is composed of a matching stage, an amplifying stage, a feedback stage and a load stage, wherein, the matching stage uses grid electrode inductance to tune wideband input impedance; the amplifying stage uses a current multiplexing common-source stage NMOS tube and a PMOS tube to serve as the input end, a common-grid electrode NMOS tube which is connected with the drain terminal output thereof is used as a current follower; an NMOS tube between an input NMOS tube grid electrode and a current follower NMOS tube drain electrode and resistance form a voltage-current type negative feedback circuit; the load stage uses resistance to load. The invention hassimple structure, occupies small chip area, has high gain and low power consumption and can satisfy the requirement of radio frequency front end of a wideband communication system.

Description

technical field [0001] The invention belongs to the field of radio frequency integrated circuits, and specifically relates to the design of a fully differential low noise amplifier with high gain, low noise and good input matching, especially for 3.1-4.8GHz, 3.1-10.6GHz ultra-wideband UWB radio frequency front-end or 900MHz~ 6GHz Cognitive Radio (SDR) RF front-end. Background technique [0002] UWB wireless communication technology and cognitive radio technology are currently research hotspots in academia and industry. Especially as a high-speed and low-power data communication method, UWB is expected to be widely used in the field of wireless communication. UWB wireless communication mainly includes three ways of UWB: carrierless pulse UWB (IR-UWB), direct sequence (DS-UWB) and multi-band OFDM (MB-OFDM) UWB. In either implementation, however, the RF receiver requires the use of a wideband LNA block. [0003] The low-noise amplifier is one of the most critical modules in ...

AI Technical Summary

Problems solved by technology

Since the gain of the LNA of this structure is proportional to the transconductance of the input common-source transistor, the requirement of broadband and high gain will inevitably lead to higher power consumption; in addition, in order to compensate the influence of the parasitic capacitance of the output node on the high-frequency gain, usually the load will be Use an inductance resonant network to improve the high-frequency gain response of the circuit. The load inductance is usually large and occupies a large chip area.

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