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Preparation method of erbium-doped lithium niobate optical waveguide amplifier

A technology of optical waveguide amplifier and lithium niobate, which is applied in lasers, laser components, instruments, etc.

Active Publication Date: 2015-07-08
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, no Er:LiNbO 3 A report on preparation of optical amplifier by crystal optical waveguide

Method used

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  • Preparation method of erbium-doped lithium niobate optical waveguide amplifier
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  • Preparation method of erbium-doped lithium niobate optical waveguide amplifier

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Embodiment 1

[0027] A preparation method for an erbium-doped lithium niobate optical waveguide amplifier, comprising the following steps:

[0028] 1) Optically polishing the surface to be processed of the erbium ion-doped lithium niobate crystal 3, the surface to be processed is perpendicular to the c-axis of the erbium ion-doped lithium niobate crystal 3;

[0029] 2) Utilize the ion beam accelerator to send phosphorus ions, bombard the polished surface of the erbium ion-doped lithium niobate crystal 3, and form a planar optical waveguide 2 on the polished surface of the erbium ion-doped lithium niobate crystal 3;

[0030] 3) processing a ridge-shaped optical waveguide 6 on the surface of the planar optical waveguide 2;

[0031] 4) Optically polishing the two end faces perpendicular to the ridge-shaped optical waveguide 6 as the outgoing end face and the incident end face;

[0032] 5) performing an optical coating on the exit end surface, the optical coating 9 is highly transparent to sig...

Embodiment 2

[0040] A kind of preparation method of erbium-doped lithium niobate optical waveguide amplifier as described in embodiment 1, its difference is,

[0041] In the step 2), the energy of the phosphorus ion is 10 MeV, and the dose is 6×10 15 ions / cm 2 .

[0042] In the step 3), processing the ridge optical waveguide includes: cutting two parallel grooves on the surface of the planar optical waveguide, the depth of the grooves is 30 μm, and the width is 200 μm; the two grooves The spacing between them is 30 μm, forming a ridge waveguide with a width of 30 μm.

[0043] In the step 5), an optical coating is applied to the exit end surface, and the optical coating is highly transparent to signal light with a wavelength range of 1.55 μm and highly reflective to pump light with a wavelength range of 810 nm.

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Abstract

The invention provides a preparation method of an erbium-doped lithium niobate optical waveguide amplifier. The method is that erbium-doped lithium niobate is used as a gain medium; the phosphonium ion irradiation method is carried out; an optical waveguide structure is manufactured on the surface of an erbium-doped lithium niobate crystal; two end surfaces of the optical waveguide are plated with films; specific wavelength is selected to amplify an optical signal; meanwhile, pumping light and signal light are coupled into the optical waveguide, so as to amplify the optical signal.

Description

technical field [0001] The invention relates to a method for preparing an erbium-doped lithium niobate optical waveguide amplifier, belonging to the technical field of optoelectronic device preparation. Background technique [0002] Erbium ion doped lithium niobate crystal (Er-doped lithium niobate, or abbreviated as Er: LiNbO 3 Crystal) has excellent laser characteristics, can generate laser light near the wavelength of 1530nm, the third window with the minimum loss in optical fiber communication, and can also perform optical amplification; on the other hand, erbium-doped LiNbO 3 Crystal materials can be used to prepare active and passive devices in integrated optics, such as optical amplifiers, lasers, couplers, filters and modulators, etc., which are of great significance to integrated optics. [0003] An optical waveguide is a high-refractive-index structure surrounded by a low-refractive-index medium. It is the most basic element of integrated optics and is used to co...

Claims

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Application Information

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IPC IPC(8): G02F1/39H01S3/16H01S3/0915
CPCG02F1/395H01S3/0915H01S3/1671
Inventor 谭杨陈峰
Owner SHANDONG UNIV
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