Rare earth ion-doped bismuth oxychloride semiconductor material and preparation method thereof

A technology of bismuth oxychloride and rare earth ions, which is applied in the field of rare earth ion doped bismuth oxychloride semiconductor materials and its preparation, can solve the problems of limited and limited doping content, and achieve low phonon energy, excellent chemical stability and mechanical stability. performance effect

Active Publication Date: 2019-06-28
KUNMING UNIV OF SCI & TECH
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

for Ho 3+ ions, which can pass through Yb 3+ Ions sensitize it to enhance the intensity of upconversion luminescence, but for sensitized ions, the doping content is limited, so it is very important

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rare earth ion-doped bismuth oxychloride semiconductor material and preparation method thereof
  • Rare earth ion-doped bismuth oxychloride semiconductor material and preparation method thereof
  • Rare earth ion-doped bismuth oxychloride semiconductor material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A rare earth ion doped bismuth oxychloride semiconductor material Bi 0.89 Yb 0.1 Ho 0 .01 The preparation method of OCl specifically comprises the following steps:

[0023] (1) Bi(NO 3 ) 3 ▪5H 2 O (99.99%), Yb 2 o 3 (99.99%), Ho 2 o 3 (99.99%), KCl (99.99%) is accurately weighed according to the molar ratio of 0.89: 0.1: 0.01: 1, Yb 2 o 3 , Ho 2 o 3 Dissolved in concentrated nitric acid at 200°C to produce Yb(NO 3 ) 3 、Ho(NO 3 ) 3 Rare earth nitrate; bismuth nitrate solution and Yb(NO 3 ) 3 、Ho(NO 3 ) 3 Two kinds of rare earth nitrate and potassium chloride solution are mixed uniformly to obtain a mixed solution, the pH value is adjusted to 6 by sodium hydroxide, and the raw materials are mixed uniformly after reacting for 0.5h, and added to a hydrothermal kettle with a polytetrafluoroethylene liner, wherein The filling degree of the hydrothermal kettle is 0.8, the temperature is raised to 160°C at a uniform speed, and the reaction is carried out for...

Embodiment 2

[0026] A rare earth ion doped bismuth oxychloride semiconductor material Bi 0.885 Yb 0.1 Ho 0 .01 Nd 0.005 The preparation method of OCl specifically comprises the following steps:

[0027] (1) Bi(NO 3 ) 3 ▪5H 2 O (99.99%), Yb 2 o 3 (99.99%), Ho 2 o 3 (99.99%), Nd 2 o 3 (99.99%), KCl (99.99%) is accurately weighed according to the molar ratio of 0.885: 0.1: 0.01: 0.005: 1, and Yb 2 o 3 , Ho 2 o 3 ,Nd 2 o 3 Dissolved in concentrated nitric acid at 200°C to produce Yb(NO 3 ) 3， Ho(NO 3 ) 3， Nd(NO 3 ) 3 Rare earth nitrate; bismuth nitrate solution and Yb(NO 3 ) 3 , Ho(NO 3 ) 3， Nd(NO3 ) 3 Mix the three kinds of rare earth nitrate and potassium chloride solution evenly to obtain a mixed solution, adjust the pH value to 6 with ammonia water, react for 0.5h to mix the raw materials evenly, and add them to a hydrothermal kettle with a polytetrafluoroethylene liner, where the hydrothermal The filling degree of the kettle is 0.8, the temperature is raised to...

Embodiment 3

[0030] A rare earth ion doped bismuth oxychloride semiconductor material Bi 0.88 Yb 0.1 Ho 0 .01 Nd 0.01 The preparation method of OCl specifically comprises the following steps:

[0031] (1) Bi(NO 3 ) 3 ▪5H 2 O (99.99%), Yb 2 o 3 (99.99%), Ho 2 o 3 (99.99%), Nd 2 o 3 (99.99%), KCl (99.99%) is accurately weighed according to the molar ratio of 0.88: 0.1: 0.01: 0.01: 1, Yb 2 o 3 , Ho 2 o 3 ,Nd 2 o 3 Dissolved in concentrated nitric acid at 200°C to produce Yb(NO 3 ) 3， Ho(NO 3 ) 3， Nd(NO 3 ) 3 Rare earth nitrate; bismuth nitrate solution and Yb(NO 3 ) 3 , Ho(NO 3 ) 3， Nd(NO 3 ) 3 Mix the three kinds of rare earth nitrate and potassium chloride solution evenly to obtain a mixed solution, adjust the pH value to 6 with ammonia water, react for 0.5h to mix the raw materials evenly, and add them to a hydrothermal kettle with a polytetrafluoroethylene liner, where the hydrothermal The filling degree of the kettle was 0.8, and the temperature was raised to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a rare earth ion-doped bismuth oxychloride semiconductor material and a preparation method thereof, belonging to the technical field of light-emitting materials. The general formula of the semiconductor material is Bi0.89Ho0.01Yb0.1NdxOCl, wherein X is equal to 0-0.03, and x is more than or equal to 0 and less than or equal to 0.03. The preparation method comprises the steps of mixing the raw materials of KCl, Nd2O3, Yb2O3, Ho2O3, Bi(NO)3-5H2O and deionized water, and preparing halogen bismuth oxide semiconductor fluorescent powder doped with several rare earth ions byvirtue of a hydrothermal method. The halogen bismuth oxide semiconductor fluorescent powder prepared by virtue of the preparation method has stable physical and chemical properties, the preparation method is simple and low in raw material cost, the halogen bismuth oxide semiconductor fluorescent powder has excellent up-conversion luminescence performance and an adjustable color and further has potential application values in the fields of fluorescent lamps, optical waveguide amplifiers and the like.

Description

technical field [0001] The invention relates to a rare earth ion-doped bismuth oxychloride semiconductor material and a preparation method thereof, belonging to the technical field of luminescent materials. Background technique [0002] At present, the research on the application of rare earth-doped bismuth oxychloride semiconductor light-emitting materials has gradually attracted the attention of researchers in recent years. Due to its unique electronic structure, bismuth oxychloride semiconductor material itself is also a good light-emitting material, so this kind of bismuth oxychloride semiconductor material is the material basis for manufacturing semiconductor devices, and has been widely used in the fields of microelectronics and optoelectronics, especially It is used in light-emitting diodes, laser diodes, infrared detectors, solar cells, environmental purification, integrated circuits, etc. for Ho 3+ ions, which can pass through Yb 3+ Ions sensitize it to enhance t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09K11/86
Inventor 宋志国王莎莎刘桐宋亚湃尹兆益杨正文邱建备
Owner KUNMING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap