Rare earth ion-doped bismuth oxychloride semiconductor material and preparation method thereof

Abstract

The invention discloses a rare earth ion-doped bismuth oxychloride semiconductor material and a preparation method thereof, belonging to the technical field of light-emitting materials. The general formula of the semiconductor material is Bi0.89Ho0.01Yb0.1NdxOCl, wherein X is equal to 0-0.03, and x is more than or equal to 0 and less than or equal to 0.03. The preparation method comprises the steps of mixing the raw materials of KCl, Nd2O3, Yb2O3, Ho2O3, Bi(NO)3-5H2O and deionized water, and preparing halogen bismuth oxide semiconductor fluorescent powder doped with several rare earth ions byvirtue of a hydrothermal method. The halogen bismuth oxide semiconductor fluorescent powder prepared by virtue of the preparation method has stable physical and chemical properties, the preparation method is simple and low in raw material cost, the halogen bismuth oxide semiconductor fluorescent powder has excellent up-conversion luminescence performance and an adjustable color and further has potential application values in the fields of fluorescent lamps, optical waveguide amplifiers and the like.

Description

technical field [0001] The invention relates to a rare earth ion-doped bismuth oxychloride semiconductor material and a preparation method thereof, belonging to the technical field of luminescent materials. Background technique [0002] At present, the research on the application of rare earth-doped bismuth oxychloride semiconductor light-emitting materials has gradually attracted the attention of researchers in recent years. Due to its unique electronic structure, bismuth oxychloride semiconductor material itself is also a good light-emitting material, so this kind of bismuth oxychloride semiconductor material is the material basis for manufacturing semiconductor devices, and has been widely used in the fields of microelectronics and optoelectronics, especially It is used in light-emitting diodes, laser diodes, infrared detectors, solar cells, environmental purification, integrated circuits, etc. for Ho 3+ ions, which can pass through Yb 3+ Ions sensitize it to enhance t...

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Problems solved by technology

for Ho 3+ ions, which can pass through Yb 3+ Ions sensitize it to enhance the intensity of upconversion luminescence, but for sensitized ions, the doping content is limited, so it is very important for increasing Ho 3+ The role of ion upconversion luminescence intensity is limited, which indirectly limits the Ho 3+ Application of ion-doped bismuth oxychloride semiconductor luminescent material

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