The invention discloses a low-power-consumption
silicon dioxide
polymer mixed integrated
optical switch and a preparation method thereof, and belongs to the technical field of
silicon dioxide /
polymer mixed optical integrated chips. The
waveguide consists of a substrate, a
waveguide lower cladding layer, a
waveguide core layer, a waveguide upper cladding layer and a
metal electrode in sequence from bottom to top, the waveguide core layer is a 1 * 1
optical switch structure, a 2 * 2
optical switch structure or a switch array formed by the 1 * 1 optical switch structure, the 2 * 2 optical switch structure and the 2 * 2 optical switch structure, and the
metal electrode is prepared on the waveguide upper cladding right above the optical switch first modulation arm waveguide. The advantages of
silicon dioxide /
polymer material platforms are fused to a great extent, the defects of the
silicon dioxide / polymer material platforms are overcome, the characteristics of low loss of
silicon dioxide waveguides and low
power consumption of polymer waveguides are integrated, and the performance
bottleneck of a single material is broken through; the waveguide structure and process provided by the invention are flexible and stable, are compatible with the existing
CMOS process, have the advantages of low
power consumption, low loss, low cost and the like, and have wide application prospects in the fields of
optical communication, optical calculation and
photon integration.