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A plastic-encapsulated power diode and its manufacturing process

A technology of power diodes and manufacturing process, which is applied in the field of plastic-encapsulated power diodes and semiconductor discrete devices. It can solve problems such as poor thermal stress resistance, deterioration of diode electrical parameters, and short baking time, so as to improve high-temperature characteristics and reduce high-temperature leakage. Current, the effect of relieving thermal stress

Inactive Publication Date: 2011-11-30
SHANDONG YIGUANG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with this method is that the baking time before coating liquid silicone rubber is short, and harmful impurities such as trace moisture, residual trace acid, metal salt compounds, organic compounds, etc. on the chip table and between the chip and the wire cannot be completely removed. The passivation effect of the surface is poor, the coated silicone rubber is cured and the packaged product has poor thermal stress shock resistance, and the electrical parameters of the diode deteriorate

Method used

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  • A plastic-encapsulated power diode and its manufacturing process
  • A plastic-encapsulated power diode and its manufacturing process
  • A plastic-encapsulated power diode and its manufacturing process

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Embodiment Construction

[0037] Below in conjunction with accompanying drawing, the present invention will be further described:

[0038] In the figure: 1. Nail head copper wire, 2. Lead-tin-silver solder sheet, 3. Silicon chip, 4. Silicon dioxide layer, 5. Epoxy resin glue, 6. Non-cavity plastic package.

[0039] ① Welding: Assemble the silicon chip, solder piece and oxygen-free copper wire into the welding boat, and connect the positive and negative electrodes of the diode through the welding furnace;

[0040] ②Acid corrosion: Insert the silicon chip connected with the wire into the pickling tray, and under the action of a mixed acid containing hydrofluoric acid, nitric acid, sulfuric acid, and glacial acetic acid, the scribing marks and oxide layer of the chip are etched away, making the surface of the chip table Smooth and clean, the PN junction exposed on the surface of the chip table has been cleaned, the composition of the acid etching solution (volume ratio): HNO 3 :HF:CH 3 COOH:H 2 SO 4 =...

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Abstract

The invention discloses a plastic-encapsulated power diode and a manufacturing process thereof, and relates to the technical field of semiconductor discrete devices. Its manufacturing process does not adopt the cleaning and dehydration process of organic solvents such as isopropanol and absolute ethanol in the prior art, and the water washing and dehydration process after cleaning with organic solvents is omitted; the chip connected with the wire is put into a heated oven Baking in medium temperature for 4-10 hours, the oven temperature is 200-250°C, and the hydrogen-nitrogen mixed gas or clean air is passed through the oven; put the chip coated with liquid epoxy resin or liquid silicone rubber into the oven at 150±10°C to cure the glue for 10 -60 minutes. Compared with the prior art, the product of the invention has excellent high-temperature characteristics, consistency and reliability.

Description

[0001] technical field [0002] The invention relates to the technical field of semiconductor discrete devices, in particular to the technical field of plastic-encapsulated power diodes. Background technique [0003] At present, plastic-encapsulated power diodes are widely used in televisions, computers, energy-saving lamps, and electronic instrumentation circuits. The packaging forms can be divided into: epoxy resin plastic packaging, glass packaging, metal packaging, ceramic packaging, etc. Epoxy resin plastic packaged power diodes are easy to mass-produce and low in cost, and are the mainstream of packaged diodes today. There are many manufacturing methods for power diode chips. One is the chip made by planar technology, the PN junction is not exposed outside the chip, and it is packaged into a diode by connecting external wires; the other is the diode made on the table, that is, the diode chip uses For the mesa type, a part of the PN junction is exposed on the surface o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L21/329
Inventor 张录周赵为涛武海清于秀娟
Owner SHANDONG YIGUANG ELECTRONICS
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