54results about How to "Low threshold" patented technology

An improved duplicate detection technique that uses query-relevant information to limit the portion(s) of documents to be compared for similarity is described. Before comparing two documents for similarity, the content of these documents may be condensed based on the query. In one embodiment, query-relevant information or text (also referred to as "snippets") is extracted from the documents and only the extracted snippets, rather than the entire documents, are compared for purposes of determining similarity.

A broadband access transmission network integrating the functions of electric power network, communication network, TV network and Internet relates to network transmission. It includes a broadband transmission network of 10 KV power distribution network and a broadband transmission network of low-voltage power distribution network. These two transmission networks are connected via distribution transformers and optical fiber connectors. The broadband transmission network of 10 KV power distribution network is composed of optical compound power lines, wires, transformer substations, machine rooms, taps, insulating jackets, insulating waterproofing outer jackets and optical fiber connectors. The broadband transmission network of low-voltage power distribution network is composed of optical compound power lines, coaxial cable compound power lines, taps, insulating jackets, optical access points, distributors, modems and two-way amplifiers. The invention can perform high-speed broadband communication and power transmission on the same compound wires. It utilizes the existing power network sufficiently and prevents the cost of rebuilding the communication network, cable TV network and Internet, and can simultaneously perform building, operating, maintaining and managing of these networks.

The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°<θ<0°.

A computer providing multiple display capability where one display presents the current document and another display may show a true display of a previously opened document. The computer is a singular processed video data signal source which presents a primary monitor with current video data. A user selected video screen sample of the current processed video data signal is diverted to this invention where it is stored in a memory. Subsequently the stored video screen sample of the processed video data signal is read-out of the memory and reconstituted as an absolute copy of the original processed video data signal and concurrently presented on a secondary monitor. User selection may be attained by a keyboard key-sequence entry, a mouse button click or using an external button-switch. Operation is absolutely independent from operating system constraints, being of equivalent usefulness while running any Operating System versions of Windows(R), Unix, MS-DOS, Linux, CP / M86 or Apple-OS. The device is preferably configured as a standalone peripheral, having two video ports connected essentially between the computer's "video output" port and the primary monitor's "video input" port and a third video port coupled with the secondary monitor's "video input" port.

An improved duplicate detection technique that uses query-relevant information to limit the portion(s) of documents to be compared for similarity is described. Before comparing two documents for similarity, the content of these documents may be condensed based on the query. In one embodiment, query-relevant information or text (also referred to as “snippets”) is extracted from the documents and only the extracted snippets, rather than the entire documents, are compared for purposes of determining similarity.

The invention relates to an intelligent public transportation system based on communication and grid computing technology. It is characterized in that it uses the Internet and VPN technology to connect the dispatching room terminals of each bus line and thousands of computers sharing computing resources in the dispatching system form a "virtual supercomputer" sharing computing resources and information resources; each bus The computer in the team dispatching room calculates the "average speed between stops" of the bus on this line based on the real-time positioning information sent back by the buses in real time during the operation of each line, confirms the specific location of the bus, and will need to share the overall "Road average vehicle speed" is uploaded to the summary platform, and each team can read the dynamic road condition information such as congestion stations, congestion intersections, congestion bottleneck nodes and other relevant road sections related to the driving status of this line. It is a low-cost, high-precision, and reliable operation. , high efficiency and good stability, and easy to popularize intelligent public transportation system.

The invention provides a trench gate type transistor in which the gate capacitance is reduced, the crystal defect is prevented and the gate breakdown voltage is enhanced. Trenches are formed in an N− type semiconductor layer. A uniformly thick silicon oxide film is formed on the bottom of each of the trenches and near the bottom, being round at corner portions. A silicon oxide film is formed on the upper portion of the sidewall of each of the trenches, which is thinner than the silicon oxide film and round at corner portions. Gate electrodes are formed from inside the trenches onto the outside thereof. The thick silicon oxide film reduces the gate capacitance, and the thin silicon oxide film on the upper portion provides good transistor characteristics. Furthermore, with the round corner portions, the crystal defect does not easily occur, and the gate electric field is dispersed to enhance the gate breakdown voltage.

A solid-state laser emitting material for use in conjunction with a light source includes a polymer matrix functioning as host materials, containing laser dye of rhodamine 590 or rhodamine 610 as gain materials and nano-submicron particles as scatters therein. The lowest lasing threshold of the laser emitting material is approximately 5 mJ / cm2 for 585 nm emission and 2 mJ / cm2 for 630 nm emission.

A horticultural luminaire, a horticultural lighting arrangement including a plurality of the horticultural luminaires, and a method for controlling the horticultural lighting arrangement are described. The horticultural luminaire includes a main light emitting unit including at least one LED for generating a main spectrum, an environmental sensor for measuring environmental data, and control electronics for determining a position data representing position of the horticultural luminaire, sending out the environmental data and the position data, receiving control data, and controlling the emission intensity of the main light emitting unit on the basis of the control data.

This invention pertains to an optical device and method for using a chalcogenide glass waveguide to amplify a pump light beam by means of stimulated Raman scattering and obtaining a depleted pump light beam and an amplified beam at a wavelength higher than the wavelength of the depleted pump light beam.

The invention provides an elongated lighting element (200) for attachment to a building part (10) selected from the group consisting of a wall (11), a ceiling (12) and a floor (13), wherein the building part (10) comprises a first attachment unit (131) and a first electrical power connector (141), wherein the elongated lighting element has a front side (210) and at the other side of the front side (210) (i) a second attachment unit (231) for forming with the first attachment unit (131) said attachment to said building part (10), (ii) a second electrical power connector (241) for forming an electrical connection with the first electrical power connector (141), and (iii) a plurality of solid state based light sources (250) configured to provide light source light (251) and functionally connected with the second electrical power connector (241).

A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ<neffL≦0.7λ.

A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The VCSEL further includes first and second mirrors that are separated by an optical path of at least one wavelength. Furthermore, the oxide insulating region beneficially has a optical path of less than ¼ wavelength. The ion implanted spatial region is beneficially concentrically aligned with the oxide insulating region.

A method for producing an organic microdisk structure 40, which is characterized by comprising: a cladding layer formation step 1 wherein a cladding layer 12 is formed by printing a first ink 11 that contains a fluorine-containing hyperbranched polymer on a substrate 10 by an inkjet method; a core layer formation step 2 wherein a core layer 22 is formed by printing a second ink 21 that contains a laser dye and a triazine-based hyperbranched polymer containing no fluorine on the cladding layer 12 by an inkjet method; and an etching step 3 wherein the cladding layer 12 is etched using a solvent 31 that dissolves only the fluorine-containing hyperbranched polymer. Consequently, an unconventional novel method for producing an organic microdisk structure with use of an inkjet method is able to be provided.

The nitride semiconductor laser device includes a substrate, a nitride semiconductor layer having a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer stacked in this order on the substrate, and a ridge provided on a surface of the nitride semiconductor layer. The surface of the nitride semiconductor layer includes a generally flat part and first and second grooves which extend along the ridge in a resonator direction, the first groove being formed continuous to a first side surface of the ridge, the second groove being formed continuous to a second side surface of the ridge which is opposite to the first side surface

Provided herein is a method for detecting the presence of a COVID-19 virus in a human sample or an environmental sample having one or more viruses and bacterial pathogens. Samples are processed to obtain total nucleic acids. A combined reverse transcription and asymmetric PCR amplification reaction is performed to obtain fluorescent labeled COVID-19 virus specific amplicons. The amplicons are detected by microarray hybridization near the lowest limit of detection. Also provided is a method for detecting concurrently with COVID-19 virus, the presence of respiratory disease-causing pathogens including viruses, bacteria and fungus in a single assay using the above method.

Methods, computer-readable means, and systems for minimizing false alarm rates and operator loading while conducting multistatic active sonar operations are disclosed. A plurality of sensor nodes is established, with each sensor node including an active sonar source, and a receiver. Each sensor node has a local storage center, and each node is connected to a data fusion center. During active sonar operations, a high threshold (HTH) and a low threshold (LTH) setting is established. For each sensor node, all sonar return data above the LTH setting are stored at its respective storage center. The HTH is set so that only specular echo returns exceed the HTH; when the HTH setting is exceeded, the fusion center retrieves LTH data from each storage center corresponding to the same specular echo return, in order to establish a track for the contact.

A single-mode micro-laser based on a single whispering gallery mode optical microcavity and a preparation method thereof described includes: preparing a desired single whispering gallery mode optical microcavity doped with rare earth ions or containing a gain material such as quantum dots, wherein an optical microcavity configuration include a micro-disk cavity, a ring-shaped microcavity, and a racetrack-shaped microcavity; a material type include lithium niobate, silicon dioxide, silicon nitride, etc.; preparing an optical fiber cone or an optical waveguide of a required size which can excite high-order modes of the optical microcavity, such as a ridge waveguide and a circular waveguides; and coupling, integrating, and packaging the optical fiber cone or the optical waveguide with the microcavity. A pump light is coupled to the optical fiber cone or the optical waveguide to excite a compound mode with a polygonal configuration.

This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.

An optical limiter comprises a glass backing, a glass cover, and a layer of a phase changing material placed between said glass backing and said glass cover, the phase changing material comprising a transparent matrix having embedded particles of material that changes its optical properties due to temperature induced phase change of said material. The optical properties may change from transparent to reflective, from transparent to refractive or from transparent to scattering. The phase changing material is preferably at least one material selected from the group consisting of the elements Antimony, Bismuth, Cadmium, Lead, Tin and Indium and low-melting-point alloys of two or more of these elements. Two or more layers of phase changing materials may be used in a stack configuration, with each of the phase changing materials having a unique melting temperature.

A medicinal preparation capable of lowering the threshold of cavitation and generating active oxygen species via acoustic cavitation caused by an ultrasound is provided. The preparation, which is to be used in combination with ultrasonic irradiation, comprises a shell within the internal space of which a gas is enclosed and which contains or retains a substance capable of generating active oxygen species upon ultrasonic irradiation of the shell.

Provided is a control system of an industrial machine that can automatically detect the presence or absence of a wiring error at a start-up of a machine, and that prevents a dangerous operation such as high rotation / high torque of a motor from occurring due to a wiring error. A control system of an industrial machine includes: a control unit that controls driving of a drive unit of the industrial machine; a command unit that issues a command to the control unit; and a wiring error detection device that detects a wiring error in a system of the control unit and the drive unit on a basis of a feedback value of actual driving of the drive unit upon a start-up of the industrial machine.

The invention relates to the field of medicine, and provides a soft capsule with different disintegrating modes. The soft capsule comprises a wall material and a content. The wall material is made ofsodium alginate which is formed through crosslinking of polyvalent metal ions in different degrees, the purpose that the soft capsule is disintegrated in different positions of human body alimentary canal can be achieved by controlling shifting of the polyvalent metal ions, adjusting the crosslinking degree of sodium alginate and adding aerogenic components into the wall material. The invention further provides a preparation method of the soft capsule with different disintegrating modes. The soft capsule provided by the invention can achieve oral disintegrating, gastric disintegrating, small intestinal disintegrating, colon disintegrating and external force smashing and disintegrating, can be suitable for the requirements for content disintegrating of different groups under different states and with different demands. In addition, a series of methods for preparing the soft capsule capable of achieving different disintegrating modes are simple and practicable, and suitable for large-scale production, and the cost is low.

The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°<θ<0°.