Silica-based germanium electrical injection laser and production method thereof

Abstract

The invention relates to a silica-based germanium electrical injection laser and a production method thereof. An active layer of the laser forms a p-i-n structure on the basis of an extension germanium-based single crystalline layer on a monocrystal line silicon. A first limiting layer is positioned at the upper part of the active layer, and a second limiting layer is positioned at the lower part of the active layer. Under the injection of large electric current, when the injected electric current is larger than or equal to a laser ejection threshold, the laser utilizes Auger effect and a laser resonant cavity to form positive feedback to adjust the electronic condensation proportion of a germanium L conduction band valley and a germanium inverse-L conduction band valley so as to realize the higher electronic condensation of the germanium inverse-L conduction band valley, therefore, the silica-based germanium electrical injection laser which realizes high efficiency and low working current density and is based on germanium direct bandgap near infrared (-1.55 microns) light emission is achieved.

Description

technical field [0001] The invention relates to a silicon-based electrical injection laser and a manufacturing method, in particular to a silicon-based germanium electrical injection laser and a manufacturing method based on germanium direct bandgap near-infrared (~1.55 μm) light emission. Background technique [0002] As we all know, silicon-based ultra-large-scale integration (ULSI) is the cornerstone of the information revolution. The computing speed of today's chips is getting faster and faster, and the speed of corresponding information transmission will also be faster and faster. Unfortunately, now relying on improving the operation speed of a single transistor or logic gate to increase the operation speed of the overall integrated circuit chip will reach the limit due to the limitation of physical effects; The speed is no longer the operation speed of a single transistor or logic gate, but more from the delay of signal transmission between transistors or / and logic ga...

AI Technical Summary

Problems solved by technology

In 2000, the Pavesi group in Italy realized the optical gain under strong optical pumping conditions for the first time in the nanocrystal system embedded in silicon dioxide, and the gain coefficient was about 100cm -1 (British Nature, 2000 V408 (6811): p440-444), in 2004, Dr. Chen Minzhang from the Cai Zhenshui group of Taiwan's "Academia Sinica" reported the realization of the first silicon-based electric injection lasing (U.S. Appl.Phys.Lett, 2004, v 84, n 12, p2163-2165), in 2004, Holland Polman group realized silicon oxide erbium-doped ring resonator optical pump lasing (US Appl. Phys. Lett 84 p1037-1039 (2004)), in 2005, Brown University JimmyXu's group reported optical pumping based on silicon-based and other electronic doping (Nature materials, UK, 2005, V4(12): p887-891), but silicon-based and other electronic doping is a long-standing problem that has not been solved for many years. Even room temperature luminescence has not been realized until now (Applied Physics Letters V90, 081101 (2007) in the United States), and the possibility of further major breakthroughs in the short term is very slim

Images