CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method

A quantum dot light-emitting and diode technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as poor stability and restrict development, and achieve the effects of low cost, mild conditions, and adjustable light-emitting wavelength range.

Active Publication Date: 2015-12-30
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the commonly used organic-inorganic hybrid perovskite (CH 3 NH 3 wxya 3 ) The problem of poor stability restricts its development

Method used

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  • CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method
  • CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method
  • CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through solution method

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Experimental program
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Embodiment 1

[0023] The CsPbX prepared by the solution method described in this embodiment 3 The inorganic perovskite quantum dot light-emitting diode specifically comprises the following steps:

[0024] 1) Spin-coat PEDOT:PSS solution on the cleaned ITO glass at a rotation speed of 4000r / min, and heat at 140°C for 15min;

[0025] 2) Spin PVK solution at a speed of 4000r / min;

[0026] 3) Take an appropriate amount of CsPbBr 3 The quantum dot dispersion was spin-coated at a speed of 2000r / min, using CsPbBr 3 Quantum dot TEM transmission picture see figure 1 ;

[0027] 4) Deposit TPBi by thermal evaporation method, the deposition thickness is 40nm;

[0028] 5) Deposit LiF / Al electrodes with a mask plate by thermal evaporation method, and the thickness of LiF / Al electrodes is 1nm / 100nm to prepare CsPbX 3 Inorganic perovskite quantum dot light-emitting diode, the schematic diagram of its structure is shown in figure 2 , and its light-emitting diode emission spectrum is shown in image...

Embodiment 2

[0030] Similar to Example 1, the difference is that the PVK in step 2) of Example 1 is changed to poly-TPD, and other conditions are kept the same to obtain CsPbX 3 Inorganic perovskite quantum dot light-emitting diodes.

Embodiment 3

[0032] Similar to Example 1, the difference is that the PVK in step 2) of Example 1 is changed to TFB, and other conditions are kept the same to obtain CsPbX 3 Inorganic perovskite quantum dot light-emitting diodes.

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Abstract

The invention discloses a CsPbX3 inorganic perovskite quantum dot light-emitting diode (LED) prepared through a solution method. ITO glass is spin-coated with a PEDOT:PSS hole injection layer, then a hole transmission layer and metal halide perovskite quantum dots are spin-coated, and an electron transmission layer is deposited through heat evaporation or magnetron sputtering; afterwards, metal electrodes of the LED are deposited through heat evaporation, and the CsPbX3 inorganic perovskite quantum dot LED which gives out light evenly is obtained. The light-emitting color of the prepared quantum dot LED can be adjusted by changing the halogen ratio of a quantum dot light-emitting layer material and can cover the entire visible spectrum range.

Description

technical field [0001] The invention relates to an inorganic metal halide perovskite quantum dot light-emitting diode prepared by a solution method, belonging to the field of electroluminescent devices. Background technique [0002] Organic light-emitting diodes are widely used in applications such as display and lighting. The current limitation is that it is difficult to efficiently deposit large-area organic light-emitting layers by vacuum sublimation. Solution-fabricated luminescent materials such as conjugated polymers, organometal halide perovskites, etc. have the potential to overcome this limitation due to their compatibility with solution processes such as roll-to-roll and inkjet printing. In recent years, halide perovskite materials have been widely used in solar cells, lasers and other fields due to their excellent photovoltaic performance and high energy conversion rate. However, the commonly used organic-inorganic hybrid perovskite (CH 3 NH 3 wxya 3 ) The pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/005H01L33/06
Inventor 董宇辉宋继中李建海曾海波
Owner NANJING UNIV OF SCI & TECH
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