Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in the direction of organic light-emitting devices, organic light-emitting device structures, semiconductor/solid-state device manufacturing, etc., can solve the problems of process difficulty and high production cost, and solve the problems of process difficulty and high production cost Effects of Cave Injection/Transportation Problems
CN105244451AActive Publication Date: 2016-01-13TCL CORPORATION
14 Cites 40 Cited by

Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
TCL CORPORATION
Publication Date
2016-01-13

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a quantum dot light-emitting diode with a mixed HTL and a preparation method of the quantum dot light-emitting diode. The quantum dot light-emitting diode sequentially comprises an anode, a hole injection layer, a mixed hole transmission layer, a quantum dot light-emitting layer, an electron transmission layer, an electron injection layer and a cathode, wherein a material of the mixed hole transmission layer is obtained by blending and dissolving two or more hole transmission layer materials with different functions into a solvent. According to the preparation method, the two or more hole transmission layer materials with different functions are mixed to prepare a layer of mixed HTL, so that maximum utilization of the hole transmission layers under the premises of simplifying the preparation technology and saving the production cost is facilitated. In addition, the problem of low transmission / injection efficiency on the holes to the quantum dot light-emitting layer in a conventional QLED can be effectively solved; the lifetime and the stability of a device are strengthened; and the overall light-emitting property and the display property of the device are improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to the technical field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode with mixed HTL and a preparation method thereof. Background technique

[0002] Quantum dot light-emitting diode (QLED) is a new display technology centered on quantum dot light-emitting materials. It has a series of advantages such as pure luminous color, high brightness, solution processing, and low cost, so it has received extensive attention. Common QLED device structures such as figure 1 As shown, it consists of ITO anode 10, hole injection layer (HIL) 11, hole transport layer (HTL) 12, quantum dot light emitting layer (QDs) 13, electron transport layer (ETL) 14, electron injection layer (EIL) 15 and metal cathode (Cathode) 16 composition. Without using any light extraction technology, the current external quantum efficiency of monochromatic QLED has exceeded 20%, and its service life has exceeded 100,000 hours. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More