Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in the direction of organic light-emitting devices, organic light-emitting device structures, semiconductor/solid-state device manufacturing, etc., can solve the problems of process difficulty and high production cost, and solve the problems of process difficulty and high production cost Effects of Cave Injection/Transportation Problems

Active Publication Date: 2016-01-13
TCL CORPORATION
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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode with hybrid HTL and its preparation method, aiming at solving the

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  • Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode
  • Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode
  • Quantum dot light-emitting diode with mixed HTL and preparation method of quantum dot light-emitting diode

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Embodiment Construction

[0032] The present invention provides a quantum dot light-emitting diode with mixed HTL and its preparation method. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0033] see image 3 , image 3 It is a structural schematic diagram of a preferred embodiment of a quantum dot light-emitting diode with a mixed HTL in the present invention, as shown in the figure, it includes: an ITO anode 30, a hole injection layer 31, and a mixed hole transport layer 32 from bottom to top , quantum dot light emitting layer 33, electron transport layer 34, electron injection layer 35 and cathode 36. Wherein, the material of the mixed hole transport layer 32 is obtained by blending two or more hole transport layer material...

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Abstract

The invention discloses a quantum dot light-emitting diode with a mixed HTL and a preparation method of the quantum dot light-emitting diode. The quantum dot light-emitting diode sequentially comprises an anode, a hole injection layer, a mixed hole transmission layer, a quantum dot light-emitting layer, an electron transmission layer, an electron injection layer and a cathode, wherein a material of the mixed hole transmission layer is obtained by blending and dissolving two or more hole transmission layer materials with different functions into a solvent. According to the preparation method, the two or more hole transmission layer materials with different functions are mixed to prepare a layer of mixed HTL, so that maximum utilization of the hole transmission layers under the premises of simplifying the preparation technology and saving the production cost is facilitated. In addition, the problem of low transmission/injection efficiency on the holes to the quantum dot light-emitting layer in a conventional QLED can be effectively solved; the lifetime and the stability of a device are strengthened; and the overall light-emitting property and the display property of the device are improved.

Description

technical field [0001] The invention relates to the technical field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode with mixed HTL and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new display technology centered on quantum dot light-emitting materials. It has a series of advantages such as pure luminous color, high brightness, solution processing, and low cost, so it has received extensive attention. Common QLED device structures such as figure 1 As shown, it consists of ITO anode 10, hole injection layer (HIL) 11, hole transport layer (HTL) 12, quantum dot light emitting layer (QDs) 13, electron transport layer (ETL) 14, electron injection layer (EIL) 15 and metal cathode (Cathode) 16 composition. Without using any light extraction technology, the current external quantum efficiency of monochromatic QLED has exceeded 20%, and its service life has exceeded 100,000 hours. ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/14H10K50/15H10K2102/302H10K71/00
Inventor 肖标付东谢相伟
Owner TCL CORPORATION
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