A quantum dot light-emitting diode with mixed htl and its preparation method

Abstract

The invention discloses a quantum dot light-emitting diode with a mixed HTL and a preparation method thereof, which sequentially comprises: an anode, a hole injection layer, a mixed hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and an electron injection layer from bottom to top. Layer and cathode; wherein, the material of the mixed hole transport layer is obtained by blending two or more hole transport layer materials with different functions and then dissolving them in a solvent. In the present invention, two or more hole transport layer materials with different functions are mixed to form a layer of mixed HTL, which is conducive to maximizing the use of the advantages of each hole transport layer under the premise of simplifying the preparation process and saving production costs. . In addition, it can effectively solve the problem of low efficiency of hole transmission / injection to the quantum dot light-emitting layer in traditional QLEDs, and is beneficial to enhance the life and stability of the device, and improve the overall luminescence and display performance of the device.

Description

technical field [0001] The invention relates to the technical field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode with mixed HTL and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new display technology centered on quantum dot light-emitting materials. It has a series of advantages such as pure luminous color, high brightness, solution processing, and low cost, so it has received extensive attention. Common QLED device structures such as figure 1 As shown, it consists of ITO anode 10, hole injection layer (HIL) 11, hole transport layer (HTL) 12, quantum dot light emitting layer (QDs) 13, electron transport layer (ETL) 14, electron injection layer (EIL) 15 and metal cathode (Cathode) 16 composition. Without using any light extraction technology, the current external quantum efficiency of monochromatic QLED has exceeded 20%, and its service life has exceeded 100,000 hours. ...

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode with hybrid HTL and its preparation method, aiming at solving the problem of hole injection / transport in the existing QLED restricting the performance of QLED devices, and preparing multiple The problem of process difficulty and high production cost caused by an independent HTL layer

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