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Chemical vapor deposition preparation method for perovskite solar cell

A technology of chemical vapor deposition and solar cells, which is applied to electrical components, gaseous chemical plating, circuits, etc., can solve the problems of expensive equipment, complicated process, porous, etc., and achieve the effect of low cost and simple operation

Active Publication Date: 2015-03-04
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Vacuum thermal evaporation can undoubtedly obtain high-quality perovskite films, but vacuum evaporation equipment is expensive, the process is complicated, and it is difficult to accurately control the ratio of elements, and it is difficult to achieve large-area preparation of uniform films with point evaporation sources
The solution method is simple to operate, but due to the ultra-fast reaction rate of the material, the film is rough, porous and not completely covered.
At the same time, perovskite thin film materials with poor film quality are generally very unstable in the air, so they need to be operated in a glove box or an ultra-low humidity environment, which further limits the industrialized large-area application of perovskite solar cells.

Method used

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  • Chemical vapor deposition preparation method for perovskite solar cell
  • Chemical vapor deposition preparation method for perovskite solar cell
  • Chemical vapor deposition preparation method for perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The structure diagram of the perovskite solar cell of the present embodiment is as follows figure 1 As shown, the FTO conductive glass is used as the substrate, and the electron transport layer, the perovskite light absorbing layer film, the hole transport layer and the top electrode are sequentially deposited on the surface of the FTO film of the FTO conductive glass from bottom to top. The specific preparation method for:

[0047] a. Deposit a dense layer of TiO on the surface of the FTO film of the FTO conductive glass 2 The thin film is used as the electron transport layer: Spin-coat 50 μL of isopropyl titanate ethanol solution with a concentration of 0.24mol / L on the surface of the FTO thin film of the FTO conductive glass at a speed of 2000rpm / 30s, and then sinter at 450°C for 30min in air. Then soak in 40mM TiCl 4 In an aqueous solution, treat at 70°C for 30 minutes, and finally sinter at 450°C for 30 minutes to obtain a dense layer of TiO with a thickness of 1...

Embodiment 2

[0058] In this example, a perovskite solar cell is prepared in the same manner as Example 1, with the difference that:

[0059] 1. Step a uses the following method to prepare a dense layer of TiO 2 film:

[0060] 0.5ml TiCl 4 Add dropwise to 2ml of absolute ethanol, then add 10ml of benzyl alcohol to obtain a yellow solution; react the yellow solution in a water bath at 80°C for 8 hours to obtain a milky white solution, add ether to the milky white solution to extract TiO to be cleaned 2 Precipitated, washed with ethanol and ether in turn to clean the TiO 2 Precipitate 3 times, then centrifuge out TiO 2 precipitation;

[0061] TiO 2 The precipitate was dispersed in ethanol to obtain a concentration of 8 mg / ml TiO 2 ethanol dispersion, then in 10ml TiO 2 Add 0.2ml of bis(acetylacetonato) diisopropyl titanate (TiAcac) in the ethanol dispersion liquid as stabilizer, obtain TiO 2 spin coating solution;

[0062] Drop 50 μL TiO on the surface of the FTO film of the FTO cond...

Embodiment 3

[0066] In this embodiment, a perovskite solar cell is prepared in the same manner as in Example 2:

[0067] The difference is: in step b3, the position of the gas phase source is heated to 250°C, the position of the reactant is heated to 200°C, and the reaction is carried out for 80 minutes to obtain CH as a perovskite light-absorbing layer film. 3 NH 3 PB 3 film;

[0068] The calculated conversion efficiency of the perovskite solar cell obtained in this embodiment is 8%.

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Abstract

The invention discloses a chemical vapor deposition preparation method for a perovskite solar cell. The preparation method is characterized in that a compact layer TiO2 thin film is deposited on a surface on which the FTO thin film of FTO conductive glass is positioned so as to act as an electron transmission layer; a perovskite light absorption layer thin film is prepared on the electron transmission layer via a chemical vapor deposition method; a hole transmission layer is prepared on the perovskite light absorption layer thin film; and an Ag electrode or an Au electrode is vapor-deposited on the hole transmission layer to act as a top electrode so that the perovskite solar cell is obtained. The preparation method is simple and low in cost. The prepared perovskite light absorption layer thin film is high in quality, excellent in substrate coverage and great in stability and repeatability. Preliminary conversion efficiency of the prepared planar heterojunction perovskite solar cell can be 11%.

Description

technical field [0001] The invention relates to a preparation method of a perovskite solar cell, belonging to the field of preparation technology of thin-film solar cell photovoltaic devices. Background technique [0002] At present, organic-inorganic hybrid perovskite solar cells have attracted widespread attention in the photovoltaic industry due to their excellent photoelectric properties. Due to their high conversion efficiency, low manufacturing cost and simple preparation process, they are considered to be extremely promising Prospect of a new generation of solar cells. Perovskite cell is a new type of solar cell with perovskite thin film material as the light absorption layer, generally expressed as AMX 3 , where A represents an organic and inorganic group with a cationic radius of 0.164nm to 0.259nm, such as Methylammonium (Ma), Formamidinium (Fa) and cesium Cs; M is Pb, Sn and Pb x sn 1-x alloy; X is a halogen element. In the past few decades, hybrid perovskite ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18C23C16/44
CPCC23C16/44H10K71/00H10K30/00H10K30/30Y02E10/549Y02P70/50
Inventor 罗派峰刘兆范夏伟
Owner HEFEI UNIV OF TECH
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