Photodiffusion powder, preparation method of photodiffusion powder, quantum dot photoresist and quantum dot color film

A technology of light diffusion and quantum dots, which is applied in the direction of optomechanical equipment, chemical instruments and methods, photoplate making process coating equipment, etc. Light conversion efficiency and other issues to achieve the effect of improving brightness, good compatibility, and increasing uniformity

Active Publication Date: 2016-06-22
BOE TECH GRP CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, as a light-diffusing powder, silicon dioxide has poor dispersion in the photoresist, which affects the flatness and patterning of the quantum dot color film, and reduces the light conversion efficiency. The organic light-diffusing powder is similar to the refractive index of the system, and the light Diffusion effect is not good

Method used

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  • Photodiffusion powder, preparation method of photodiffusion powder, quantum dot photoresist and quantum dot color film
  • Photodiffusion powder, preparation method of photodiffusion powder, quantum dot photoresist and quantum dot color film
  • Photodiffusion powder, preparation method of photodiffusion powder, quantum dot photoresist and quantum dot color film

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preparation example Construction

[0039] The invention discloses a preparation method of light diffusing powder, comprising the following steps:

[0040] The alkoxysilane is subjected to a co-hydrolysis condensation reaction under an acidic condition or an alkaline condition to obtain a light diffusing powder;

[0041] The alkoxysilane has the structure of formula I:

[0042]

[0043] Wherein, R1 is a C1-C50 alkyl group, preferably a C1-C20 alkyl group, more preferably a methyl group or an ethyl group;

[0044] Wherein, R' is an alkyl group or a substituted alkyl group, and the substituted alkyl group refers to a substituent such as halogen, amine group, hydroxyl group, and carboxyl group substituted for hydrogen in the alkyl chain, and the substituent group may also contain oxygen, nitrogen, sulfur, etc. Equiatomic carbon segments, such as alkoxy, epoxy, amide, ester, etc. Said R' is preferably as shown in the following structure:

[0045]

[0046] Wherein, A1, A2, A3, A4, B1, B2, B3, B4, and J are i...

Embodiment 1

[0104] Dissolve n-octyltriethoxysilane (13.8 mg, 0.05 mmol) in 20 ml of acetonitrile, then add 10 ml of 0.01 mol / L hydrochloric acid solution, stir, heat in an oil bath at 90 °C for 12 h, stop stirring, and continue in Heating and curing under reduced pressure for 5 hours, the obtained solid was washed with 1 mol / L hydrochloric acid solution, distilled water, acetonitrile solution, and finally with acetone, and vacuum dried at 60 °C to obtain light diffusing powder. The light diffusing powder has the structure of formula II, wherein R'=CH 3 (CH 2 ) 6 CH 2 -.

[0105] Disperse the red CdSe / ZnS core-shell quantum dots into the mass-produced photoresist mother solution (without pigment components), then add the above-mentioned light diffusing powder, and carry out ultrasonic dispersion for 1 h. The mixing ratio is: the content of quantum dots is 10wt% , the content of light diffusing powder is 20wt%, 20wt% acrylic resin, 10wt% 1,6-hexanediol diacrylate, 1.5wt% benzophenone co...

Embodiment 2

[0108] n-octadecyltriethoxysilane (20.9mg, 0.05mmol) was dissolved in 20ml of acetonitrile, then 10ml of 0.01mol / L hydrochloric acid solution was added, stirred, heated in an oil bath at 90°C for 12h, stopped stirring, and continued Heating and curing under reduced pressure for 3 hours, the obtained solid was washed with 1 mol / L hydrochloric acid solution, distilled water, acetonitrile solution, and finally with acetone, and vacuum dried at 60 °C to obtain light diffusing powder. The light diffusing powder has the structure of formula II, wherein R'=CH 3 (CH 2 ) 16 CH 2 -.

[0109] Disperse the red CdSe / ZnS core-shell quantum dots into a commercially available mass-produced photoresist mother solution (without pigment components), then add the above-mentioned light diffusing powder, and carry out ultrasonic dispersion for 1h. The mixing ratio is: the quantum dot content is: 10wt%, the content of light diffusing powder is 20wt%, 20wt% acrylic resin, 10wt% 1,6-hexanediol dia...

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Abstract

The invention belongs to the technical field of display, and particularly relates to photodiffusion powder, a preparation method of the photodiffusion powder, quantum dot photoresist and a quantum dot color film.The preparation method of the photodiffusion powder comprises the steps that alkoxy silane is subjected to a cohydrolysis condensation reaction under the acidic condition or the alkaline condition, and the photodiffusion powder is obtained.The quantum dot photoresist made of the photodiffusion powder and the quantum dot color film are further disclosed.The photodiffusion powder has an organic chain segment structure and an inorganic structure, and is good in compatibility with all kinds of components in a quantum dot photoresist system, a good dispersion effect is achieved, and the uniformity of the photoresist is increased.The quantum dot color film made of the quantum dot photoresist is even in film quality and high in light utilization rate.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a light diffusing powder, a preparation method of the light diffusing powder, a quantum dot photoresist and a quantum dot color film. Background technique [0002] The backlight source of the traditional liquid crystal display device is a white backlight. In order to realize color display, a color filter layer is generally provided on the side of the color filter substrate. However, since nearly 70% of the backlight brightness is lost during light transmission, the color filter layer becomes one of the devices with the most serious backlight brightness loss. In recent years, quantum dot light-emitting diodes have been favored in the display field due to their good light-emitting characteristics and high color gamut. The quantum dot light-emitting diode has a similar device structure to the polymer light-emitting diode, but its light-emitting layer is composed of a quantum dot c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G77/18G03F7/004G03F7/033G03F7/038
CPCC08G77/18G03F7/004G03F7/033G03F7/038C08G77/20C09D183/06C09K11/025C09K11/565C09K11/883G03F7/0047G03F7/027G03F7/0757G03F7/2053G02B1/04G02F1/133617G02F2202/36G03F7/0007G03F7/0043G03F7/031G03F7/0758G03F7/16G03F7/20G03F7/26
Inventor 周婷婷张斌齐永莲谢蒂旎蒋勇
Owner BOE TECH GRP CO LTD
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