Sputtering device and sputtering method

A sputtering device and assembly technology, applied in sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problems of uneven film quality, non-promoting reaction, etc., and achieve the effect of uniform film quality

Active Publication Date: 2007-01-31
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, if reactive gas is introduced into the sputtering apparatus 1 to perform reactive sputtering, the reaction is not promoted in the portion where the plasma density is low, and the film quality in the surface of the substrate S becomes uneven.

Method used

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  • Sputtering device and sputtering method
  • Sputtering device and sputtering method
  • Sputtering device and sputtering method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] In Example 1, using figure 2 with image 3 Films were formed using the sputtering device shown in , and the number of occurrences of arc discharge during film formation was studied.

[0052] Will be composed of In 2 o 3 -10wt%SnO 2 A target made of (ITO) was installed parallel to the substrate at a position 150 mm away from the substrate. The target width was 2 mm, respectively. A magnet assembly with a width of 170 mm, a length of 1570 mm, and a thickness of 40 mm was installed behind each target so that the distance from each target was 47 mm, and the ball screw 251 was used to make the driving distance 50 mm. As the substrate S, a glass substrate having a width of 1000 mm, a length of 1200 mm, and a thickness of 0.7 mm was prepared.

[0053] After the substrate was transported, evacuation was carried out, and then argon gas was introduced from the gas introduction unit at 240 sccm as a sputtering gas to form a film-forming atmosphere of 0.67 Pa. Additionally,...

Embodiment 2

[0058] In Example 2, using figure 2 with image 3 In the sputtering apparatus shown in , the in-plane uniformity of film quality was evaluated when reactive sputtering was performed.

[0059] The flow rate of the reaction gas during film formation was changed, and the flow rate at which the resistivity decreased the most at each point on the film was investigated, and the in-plane uniformity of film quality was evaluated using the difference in the flow rate.

[0060] Using the same sputtering apparatus as used in Example 1, a plurality of films were formed by changing the flow rate of the reaction gas in Example 1. As a reactive gas, H 2 The flow rate of O gas was set at 2.0 sccm, and the flow rate was changed from 0.0 sccm to 4.0 sccm at a scale of 0.5 sccm, and O was introduced. 2 gas. The frequency of each AC power supply E was 25 kHz, and the power was gradually increased from 0 kW to 15 kW at the end, and the AC power supply was stopped after 25 seconds of applicati...

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PUM

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Abstract

The invention provides a sputtering apparatus capable of preventing any non-erosive area from remaining on a target, and depositing a film of a uniform quality when performing the responsive sputtering. The sputtering apparatus 2 has at least four targets 241 arranged side by side at predetermined intervals in a vacuum chamber 21, and AC power sources E connected to two targets one by one out of the targets arranged side by side so as to alternately apply the negative potential and the positive potential or the grounding potential thereto, and each AC power source E is connected to the two targets 241 not adjacent to each other.

Description

technical field [0001] The present invention relates to a sputtering device and a sputtering method. Background technique [0002] In film formation, the magnetron sputtering method is widely used due to advantages such as high film formation speed. In the magnetron sputtering method, a magnet assembly composed of a plurality of magnets whose polarities are alternately changed is set behind the target. By using the magnet assembly to form a magnetic flux in front of the target to capture electrons, the The electron density in front of the target increases the probability of collision of these electrons with the gas introduced in the vacuum chamber, and sputtering is performed by increasing the plasma density. [0003] However, in recent years, the size of the magnetron sputtering apparatus has been increasing along with the increase in the size of the substrate. As such an apparatus, there is known a sputtering apparatus capable of forming a film on a large-area substrate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/0036C23C14/352
Inventor 小林大士谷典明小松孝清田淳也中村肇新井真
Owner ULVAC INC
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