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Stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and manufacturing method thereof

A copper-zinc-tin-selenium-sulfur and solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing absorption rate and inability to effectively absorb short-wavelength light, and achieve the effect of reducing contact resistance

Inactive Publication Date: 2013-10-30
SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the traditional CZTSe thin film solar cell only has a solar absorbing layer structure with a single semiconductor energy gap, it cannot effectively absorb short-wavelength light with a shallow penetration depth, which reduces the light absorption rate of the traditional CZTSe thin film solar cell

Method used

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  • Stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and manufacturing method thereof
  • Stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and manufacturing method thereof
  • Stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and manufacturing method thereof

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Embodiment 1

[0050] Below, will match figure 1 As shown, the manufacturing process of the present invention for manufacturing stacked copper-zinc-tin-selenide-sulfur thin film solar cells is described in detail.

[0051] First, a clean substrate 11 is provided. A back electrode layer 12 is formed on the substrate 11 by a sputtering process. In this embodiment, the substrate 11 is a soda glass substrate, the back electrode layer 12 is a molybdenum electrode layer, and the thickness of the molybdenum electrode layer is about 400 nm to 1000 nm.

[0052] Then, at a vacuum below 10 -2 In a torr vacuum chamber, the sulfur element of the hydrogen sulfide gas is used to sulfide the surface of the back electrode layer 12 to form a sulfur compound layer 13 on the back electrode layer 12 . In this embodiment, after the sulfurization reaction, a molybdenum disulfide layer with a thickness of about 10 nm to 200 nm is formed on the surface of the molybdenum electrode layer.

[0053] Then, when the v...

Embodiment 2

[0070] In this embodiment, the stacked copper-zinc-tin-selenide-sulfur thin-film solar cell is basically manufactured by the same process method as that described in embodiment 1.

[0071] The main difference is that a sulfur compound layer is formed on the molybdenum electrode layer by sputtering process. The sulfur compound layer is a cuprous sulfide layer. In an embodiment of the present invention, the sulfur-containing compound layer may also be a zinc sulfide layer, a tin sulfide layer or a combination thereof.

[0072] Afterwards, as in the manufacturing method described in Embodiment 1, a CuSe layer and a ZnS layer are sequentially deposited. The cuprous selenide layer and the zinc tin oxide layer are the solar precursor layer, and the solar precursor layer is formed on the cuprous sulfide layer.

[0073] Next, as in the manufacturing method described in Example 1, the sulfur-containing compound layer and the solar energy absorbing precursor layer are subjected to sel...

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Abstract

The invention provides a stack-based copper zinc tin sulfur selenide (CZTSSe) thin film solar cell and a manufacturing method of the stack-based CZTSSe thin film solar cell. The manufacturing method of the stack-based CZTSSe thin film solar cell sequentially includes: sequentially forming a sulfide layer, a cuprous selenide layer and a zinc stannide layer on a back electron layer, manufacturing a selenide layer containing sulfur compounds and a selenium sulfide solar energy absorbing layer after selenylation and sulfuration, and depositing an n-type buffering layer and a top electron layer to manufacture the stack-based CZTSSe thin film solar cell, wherein the selenium sulfide solar energy absorbing layer comprises a low-energy-gap copper zinc tin selenide (CZTSe) layer arranged between two high-energy-gap CZTSSe layers in a clamping mode to form a stack-based solar energy absorbing layer. Besides, the invention further provides the stack-based CZTSSe thin film solar cell. Due to the fact that the stack-based solar energy absorbing layer improves the light absorbing rate and reduces the recombination rate of electrons / holes, the photoelectric property of the stack-based CZTSSe thin film solar cell is improved.

Description

technical field [0001] The invention relates to a stacked copper-zinc-tin-selenide-sulfur thin-film solar cell, in particular to a stacked copper-zinc-tin-selenium-sulfur thin-film solar cell with a stacked solar absorbing layer structure. [0002] In addition, the present invention also relates to a method for manufacturing a stacked copper-zinc-tin-selenide-sulfur thin film solar cell. Background technique [0003] According to different materials, thin-film solar cells can be divided into amorphous silicon thin-film solar cells, polycrystalline silicon thin-film solar cells, and multi-component compound thin-film solar cells. [0004] At present, multi-component compound thin-film solar cells that have been developed on the market, such as: Copper Indium Gallium Selenide thin-film solar cell (CIGS thin-film solar cell), copper zinc tin-sulfur thin-film solar cell (Copper Zinc Tin Sulfide thin-film solar cell, CZTS thin-film solar cell) or copper zinc tin selenide thin-fi...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0336H01L31/0352H01L31/04
CPCY02E10/50Y02P70/50
Inventor 林俊荣杨能辉
Owner SOLAR APPLIED MATERIALS TECHNOLOGY CORPORATION
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