10 results about "Superconducting resonators" patented technology

Techniques are provided for encapsulating one or more superconducting devices of a quantum processor (100). For example, one or more of the modalities described herein include a method comprising depositing an adhesion layer (402) onto a superconducting resonator (102) and a silicon substrate (104) that are part of the quantum processor. The superconducting resonator may be located on the silicon substrate. Furthermore, the adhesion layer may be composed of a chemical compound with a thiol functional group.

A device includes a source region, a drain region, a channel region, a pair of depletion gates, an accumulation gate, and a superconductive resonator. The channel region is between the source region and the drain region. The pair of depletion gates are spaced apart from each other. The pair of depletion gates both overlap the channel region and define a quantum dot qubit region in the channel region and between the pair of depletion gates. The accumulation gate is above and crossing the pair of depletion gates. The superconductive resonator is laterally adjacent the quantum dot qubit region.

The present disclosure relates to methods and systems for generating and stabilising Gottesman–Kitaev-Preskill (GKP) encoded quantum states in a superconducting resonator. A first method enables autonomous correction of phase-flip and bit-flip errors by driving a superconducting resonator with a voltage tone and coupling the resonator to a thermodynamic environment for providing error correction via dissipation of noise-induced entropy. A second method implements a read-out protocol with Josephson junction coupled to an intermediate node of the resonator and driven with an auxiliary voltage tone to distinguish logical GKP states via a measured time-averaged supercurrent. A system comprises a superconducting resonator including a Josephson junction, a voltage source for applying the drive tone, and a coupling to an thermodynamic environment arranged to realise dissipative error correction.

The invention particularly relates to an asymmetric response superconducting resonator loaded with vertical through holes and interdigital capacitors and a superconducting filter based on the resonator, and belongs to the technical field of high-temperature superconducting circuits and microwave communication. The filter comprises a dielectric substrate, a high-temperature superconducting thin film layer and a circuit constructed on the high-temperature superconducting thin film layer, the circuit comprises four single-ended grounding folded microstrip structures, an interdigital capacitor, a rectangular microstrip block grounding structure, a feeder auxiliary line, an input / output microstrip feeder and a grounding through hole, and four grounding multimode resonators are formed to provide eight pole frequencies. By adjusting the width of the rectangular microstrip block grounding structure and the length and position of the interdigital capacitor, independent regulation and control of odd-even mode frequency and flexible control of a transmission zero point are realized. An additional topological structure is not needed, selectivity and out-of-band rejection performance of the filter are remarkably improved while the size of a device is reduced and low insertion loss is kept, the filter is compatible with an existing thin film process, the miniaturization and batch requirements are met, and the industrialization potential is outstanding.

The application relates to a high-Q tunable superconducting band-pass filter capable of improving echo loss, comprising a filter circuit; the filter circuit comprises a plurality of superconducting resonators and a secondary coupling line arranged between adjacent superconducting resonators; the superconducting resonator is loaded with at least two first varactor tubes; and the secondary coupling line is loaded with a second varactor tube and a direct-current blocking capacitor. By loading the tunable secondary coupling line between the resonators, the coupling coefficient between the resonators can be adjusted, and the echo in the filter band can be improved; by loading a plurality of first varactor tubes in parallel, the Q value of the overall circuit can be effectively improved, and the performance of the tunable filter is improved.

A device includes a source region, a drain region, a channel region, a pair of depletion gates, an accumulation gate, and a superconductive resonator. The channel region is between the source region and the drain region. The pair of depletion gates are spaced apart from each other. The pair of depletion gates both overlap the channel region and define a quantum dot qubit region in the channel region and between the pair of depletion gates. The accumulation gate is above and crossing the pair of depletion gates. The superconductive resonator is laterally adjacent the quantum dot qubit region.

The invention discloses a compact superconducting resonator based on a space filling curve, a preparation method, a design method and application, and the resonator comprises a space filling curve resonator main body which is composed of a superconducting thin film, and the space filling curve continuously traverses a limited plane area in a non-crossed manner; the coplanar waveguide transmission line comprises a central conductor belt and ground planes positioned on two sides of the central conductor belt; and the space filling curve resonator main body and the coplanar waveguide transmission line are coupled through a capacitor or an inductor so as to realize signal reading. The compact superconducting resonator can be widely applied to quantum bit reading, microwave filters and low-temperature quantum microwave devices, and has the advantages of high integration level, low loss and good expandability.

This application relates to a quantum parity measurement method and apparatus. The method includes: initializing the quantum bit by adjusting the resonance between the quantum bit and a superconducting resonator through a DC bias; preparing the parity state vector of the quantum bit onto the -Y axis through an X / 2 quantum bit gate; preparing the parity state vector of the quantum bit onto the -X axis and X axis respectively by controlling the gate electrode and the X quantum bit gate; and preparing the parity state vector of the quantum bit onto the Z axis and -Z axis respectively via the Y / 2 quantum bit gate. According to the quantum parity measurement method and apparatus provided in this application, by controlling the deviation of the gate electrode from the degeneracy point, the parity phase difference can be controllably accumulated in the middle of the spin echo sequence, achieving parity mapping while also resisting low-frequency noise in the system. Therefore, this application can simultaneously achieve the requirements of high fidelity, high time resolution, and rapid system calibration.

The application relates to a high-Q-value wide-frequency-range tunable superconducting wave trap, which comprises a wave trap circuit; the wave trap circuit comprises a main transmission line and a superconducting resonator; the superconducting resonator is loaded with a superconducting interdigital capacitor and at least two variable capacitance tubes. The tunable superconducting wave trap can solve the defects in the prior art, by means of parallel loading of multiple variable capacitance tubes and adoption of a superconducting interdigital capacitor as a direct-current capacitor, the tuning range of the wave trap can be increased, the Q value of the overall circuit can be improved, and the performance of the tunable wave trap is improved.

A voltage-tunable gate electron system integrated with a superconducting resonator for quantum computing. A superconducting coupling device includes a resonator structure. The resonator structure has a first end configured to be coupled to a first device and a second end configured to be coupled to a second device. The device further includes an electron system coupled to the resonator structure, and a gate positioned proximal to a portion of the electron system. The electron system and the gate are configured to interrupt the resonator structure at one or more predetermined locations, forming a switch. The gate is configured to receive a gate voltage and vary an inductance of the electron system based on the gate voltage. The variation in inductance induces the resonator structure to vary a coupling resistance between the first device and the second device.