Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Dielectric composition and electronic component

A technology of electronic components and compositions, applied in the direction of electrical components, fixed capacitor dielectrics, niobium compounds, etc., can solve the problems of miniaturization requirements and other difficulties, and achieve high Q value, high relative permittivity, and high dielectric breakdown voltage Effect

Active Publication Date: 2018-11-02
TDK CORPARATION
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For example, amorphous SiNx films are generally used for high-frequency applications because their Q values ​​are as high as about 500 at high frequencies (2 GHz) and their dielectric breakdown voltages are as high as about 500 to 700 V / μm. Electronic components, but because the relative permittivity is as low as about 7, it is necessary to have a large electrode surface in order to hold the purpose function, and it is difficult to meet the demand for miniaturization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dielectric composition and electronic component
  • Dielectric composition and electronic component
  • Dielectric composition and electronic component

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055]

[0056] First, a Ti thin film as an underlayer was formed on a Si surface with a thickness of 350 μm on SiO with a thickness of 6 μm by sputtering so as to have a thickness of 20 nm. 2 insulating film on the surface of a 10mm x 10mm square substrate.

[0057] Next, a lower electrode Pt thin film was formed to a thickness of 100 nm by sputtering on the Ti thin film formed as described above.

[0058] Heat treatment is performed on the formed Ti / Pt thin film under the conditions that the heating rate is 400° C. / min; the holding temperature is 700° C.; the temperature holding time is 0.5 hour; the atmosphere gas is oxygen atmosphere gas; and the pressure is normal pressure.

[0059] The method used in the formation of the dielectric film is the PLD method. Targets necessary for the formation of the dielectric film were prepared as follows.

[0060] First, BaCO was weighed in such a manner that it becomes the amount of Ba, Ca, Sr, Ta, and Nb of sample No. 1 to sample ...

Embodiment 2

[0099] Samples were prepared in the same manner as in Sample No. 21 of Example 1 except that the dielectric film was formed by sputtering, and the same evaluations as in Example 1 were performed. The evaluation results are shown in Table 1.

[0100] [Table 2]

[0101]

[0102] Sample No.21, 37

[0103] From Table 2, it can be confirmed that using the dielectric film according to the present embodiment exhibits substantially the same characteristics if the composition is the same even if the method for producing the dielectric film is different. Industrial Utilization Possibility

[0104] As explained above, the present invention relates to a dielectric composition and an electronic component. The present invention provides a dielectric composition having a high relative permittivity, a high Q value, and a high dielectric breakdown voltage even in a high frequency (2 GHz) region, and An electronic component using the dielectric composition. Accordingly, miniaturization a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The purpose of the present invention is to provide a dielectric composition with a high relative permittivity and small dielectric loss, that is, a high Q value and a high dielectric breakdown voltage even when used at a high frequency (2 GHz), and a dielectric composition using the same Dielectric composition for electronic components. The dielectric composition involved in the present invention is characterized in that: as the main component, it contains the chemical formula AαBβC2γOα+β+5γ (A is Ba element, B is at least one element selected from Ca or Sr, C is selected from Ta or Nb For composite oxides represented by at least one element), the relationship between α, β, and γ satisfies α+β+γ=1.000; 0.000<α≤0.375; 0.625≤β<1.000; 0.000≤γ≤0.375.

Description

technical field [0001] The present invention relates to dielectric compositions and electronic components. Background technique [0002] In order to respond to further high-speed and large-capacity communication of mobile communication devices represented by smartphones and tablet PCs, the practical use of MIMO technology (Multi-Input Multi-Output) using multiple frequency bands at the same time has begun. If the frequency band used for communication increases, each high-frequency element will be required for each frequency band, but to maintain the size of the device and increase the number of elements, further miniaturization and higher functionality of each element are required. [0003] Such high-frequency compatible electronic components include, for example, diplexers (diplexers), band-pass filters, and the like. These are all composed of a combination of a dielectric serving as a capacitor and a magnetic body serving as an inductor, but in order to obtain good high-f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01G4/12H01B3/12H10N97/00
CPCH01B3/12H01G4/1209H01G4/1254C04B35/495C01G33/006C01G35/006C01F11/02C04B35/01C01P2006/40C04B2235/3251C04B2235/6562C04B2235/6567H01L28/00C04B35/057H01G4/33C04B2235/3215C04B2235/3208C04B2235/3213H10B43/27H01B3/10H01P1/20H01P1/213C04B2235/3255H01L28/55
Inventor 藤井祥平政冈雷太郎内山弘基城川真生子
Owner TDK CORPARATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com