Dielectric composition and electronic component

Abstract

A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5 ‰¤ ± ‰¤ 1.5 holds, where ± is the molar ratio of the A-group to the B-group.

Description

technical field

[0001] The present invention relates to dielectric compositions and electronic components. Background technique

[0002] Examples of electronic components using dielectric films include film capacitors, high-frequency film filters, and the like. They are widely used as small-sized, high-performance electronic parts, requiring higher electrostatic capacitance, small change in electrostatic capacitance with temperature, and excellent resistance to high voltage. In recent years, with the further miniaturization and higher performance of high-performance devices such as smartphones and notebook computers, the demand for miniaturization and higher performance of electronic components has also become stricter.

[0003] In response to such demands, for example, further thinning of dielectric films of film capacitors is being carried out. The capacitance of the capacitor can be increased by thinning the capacitor, however, the resistance to high voltage is reduced,...

Examples

Embodiment 1

[0062]

[0063] First, 6 μm SiO is provided on the surface of 350 μm Si 2 On the surface of the 10 mm×10 mm square support substrate of the insulating film, a Ti thin film as an underlayer was formed to have a thickness of 20 nm by a sputtering method.

[0064] Next, a Pt thin film as a lower electrode was formed on the Ti thin film formed above by sputtering so as to have a thickness of 100 nm.

[0065] With respect to the formed Ti / Pt thin film, heat treatment was performed under normal pressure at a heating rate of 400° C. / min, a holding temperature of 700° C., a temperature holding time of 30 minutes, and an oxygen atmosphere.

[0066] The PLD method is used for the formation of the dielectric film. The targets required for forming the dielectric film were produced as follows.

[0067] First, BaCO was carried out so that the ratio of the amounts of Ba, Ca, and Sr in Sample No. 1 to Sample No. 14 and the molar ratio α between Group A and Group B became the values ​​sho...

Embodiment 2

[0090]

[0091] BaCO was carried out so that the ratio of the amount of Ba, Ca, and Sr in sample No. 15 to sample No. 20 and the molar ratio α between group A and group B became the values ​​shown in Table 2. 3 , CaCO 3 , SrCO 3 , ZrO 2 、TiO 2 Weighing, making targets. Film capacitor samples of sample Nos. 15 to 20 were produced in the same manner as in Example 1 except for the composition of the target, and the same evaluations as in Example 1 were performed. The results are shown in Table 2.

[0092] [Table 2]

[0093]

[0094] Sample No.11, Sample No.15~Sample No.18

[0095] According to Table 2, when the molar ratio α of group A and group B is in the range of 0.5≤α≤1.5, and the amorphous and crystalline are in a mixed state, it can be confirmed that the withstand voltage is above 5.0MV / cm, and the relative dielectric constant is over 30.

[0096] Sample No.19, Sample No.20

[0097] According to Table 2, when the molar ratio α of Group A to Group B is α1.5, c...

Embodiment 3

[0098]

[0099] The ratio of the amounts of Ba, Ca, and Sr, the ratio of the amounts of Zr and Ti, and the molar ratio α between the A group and the B group of samples No. 21 to No. 25 were set to the values ​​shown in Table 3. BaCO 3 , CaCO 3 , SrCO 3 , ZrO 2 、TiO 2 Weighing, making targets. Film capacitor samples of sample No. 21 to sample No. 25 were produced in the same manner as in Example 1 except for the composition of the target, and the same evaluations as in Example 1 were performed. The results are shown in Table 3.

[0100] [table 3]

[0101]

[0102] Sample No.11, Sample No.21~Sample No.23

[0103] According to Table 3, in the dielectric composition composed of amorphous containing group A and group B and crystal containing group A and group B, group B containing Zr element also contains Ti element, and the ratio (w) of Ti is 0mol%<w≤60mol%, and when the amorphous and crystalline are in a mixed state, it can be confirmed that the relative permittivit...

technical field

[0001] The present invention relates to dielectric compositions and electronic components. Background technique

[0002] Examples of electronic components using dielectric films include film capacitors, high-frequency film filters, and the like. They are widely used as small-sized, high-performance electronic parts, requiring higher electrostatic capacitance, small change in electrostatic capacitance with temperature, and excellent resistance to high voltage. In recent years, with the further miniaturization and higher performance of high-performance devices such as smartphones and notebook computers, the demand for miniaturization and higher performance of electronic components has also become stricter.

[0003] In response to such demands, for example, further thinning of dielectric films of film capacitors is being carried out. The capacitance of the capacitor can be increased by thinning the capacitor, however, the resistance to high voltage is reduced,...

Examples

Embodiment 1

[0062]

[0063] First, 6 μm SiO is provided on the surface of 350 μm Si 2 On the surface of the 10 mm×10 mm square support substrate of the insulating film, a Ti thin film as an underlayer was formed to have a thickness of 20 nm by a sputtering method.

[0064] Next, a Pt thin film as a lower electrode was formed on the Ti thin film formed above by sputtering so as to have a thickness of 100 nm.

[0065] With respect to the formed Ti / Pt thin film, heat treatment was performed under normal pressure at a heating rate of 400° C. / min, a holding temperature of 700° C., a temperature holding time of 30 minutes, and an oxygen atmosphere.

[0066] The PLD method is used for the formation of the dielectric film. The targets required for forming the dielectric film were produced as follows.

[0067] First, BaCO was carried out so that the ratio of the amounts of Ba, Ca, and Sr in Sample No. 1 to Sample No. 14 and the molar ratio α between Group A and Group B became the values ​​sho...

Embodiment 2

[0090]

[0091] BaCO was carried out so that the ratio of the amount of Ba, Ca, and Sr in sample No. 15 to sample No. 20 and the molar ratio α between group A and group B became the values ​​shown in Table 2. 3 , CaCO 3 , SrCO 3 , ZrO 2 、TiO 2 Weighing, making targets. Film capacitor samples of sample Nos. 15 to 20 were produced in the same manner as in Example 1 except for the composition of the target, and the same evaluations as in Example 1 were performed. The results are shown in Table 2.

[0092] [Table 2]

[0093]

[0094] Sample No.11, Sample No.15~Sample No.18

[0095] According to Table 2, when the molar ratio α of group A and group B is in the range of 0.5≤α≤1.5, and the amorphous and crystalline are in a mixed state, it can be confirmed that the withstand voltage is above 5.0MV / cm, and the relative dielectric constant is over 30.

[0096] Sample No.19, Sample No.20

[0097] According to Table 2, when the molar ratio α of Group A to Group B is α1.5, c...

Embodiment 3

[0098]

[0099] The ratio of the amounts of Ba, Ca, and Sr, the ratio of the amounts of Zr and Ti, and the molar ratio α between the A group and the B group of samples No. 21 to No. 25 were set to the values ​​shown in Table 3. BaCO 3 , CaCO 3 , SrCO 3 , ZrO 2 、TiO 2 Weighing, making targets. Film capacitor samples of sample No. 21 to sample No. 25 were produced in the same manner as in Example 1 except for the composition of the target, and the same evaluations as in Example 1 were performed. The results are shown in Table 3.

[0100] [table 3]

[0101]

[0102] Sample No.11, Sample No.21~Sample No.23

[0103] According to Table 3, in the dielectric composition composed of amorphous containing group A and group B and crystal containing group A and group B, group B containing Zr element also contains Ti element, and the ratio (w) of Ti is 0mol%<w≤60mol%, and when the amorphous and crystalline are in a mixed state, it can be confirmed that the relative permittivit...

Images