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GaAs nano optical resonance structure photoelectric negative electrode electron source and preparation method thereof

A nano-optical and photocathode technology, which is applied in the manufacture of light-emitting cathodes, photoemission cathodes, and main electrodes of discharge tubes, can solve problems such as low emissivity, achieve high quantum efficiency, enhance light absorption rate, and reduce light reflectivity. Effect

Active Publication Date: 2018-11-06
EAST CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The application of the optical resonance effect of semiconductor nanostructures in GaAs photocathode electron sources has not been reported yet, but it has been widely used in optoelectronic devices such as silicon-based semiconductor photodetectors, solar cells, lasers, and biosensors. The optical absorption enhancement effect, the spatial confinement characteristics of the light field, the multi-photon nonlinear optical effect, etc. have all been verified. The technical requirements in this field are completely in line, and it provides an effective solution for the development of a new generation of high-brightness, high-polarization, low-emissivity, and ultra-fast pulse excitation electron sources.

Method used

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  • GaAs nano optical resonance structure photoelectric negative electrode electron source and preparation method thereof
  • GaAs nano optical resonance structure photoelectric negative electrode electron source and preparation method thereof
  • GaAs nano optical resonance structure photoelectric negative electrode electron source and preparation method thereof

Examples

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Effect test

Embodiment 1

[0073] Preparation of GaAs nano-optical resonance structure photocathode electron source by nanoimprint etching method:

[0074] 1. Material preparation: a p-type GaAs wafer substrate with a diameter of 3 inches requires its dislocation density to be lower than 10 3 cm -3 , and the uniformity is good, the crystal orientation is 3° cut towards the (100) plane, and the thickness is 300-500μm;

[0075] 2. Substrate cleaning: Ultrasonic cleaning with acetone and alcohol for 10 minutes and then soaking in deionized water to effectively remove organic matter on the surface of the substrate.

[0076] 3. SiO2 thin film barrier layer: Deposit SiO2 using plasma enhanced chemical vapor deposition (PECVD) technology 2 The thin film is used as a barrier layer, and the specific parameters are that the reaction chamber pressure is 2000 mTorr, and the reaction gas is SiH 4 , N 2 O and N2, the flow rates were 4, 710 and 180 SCCM, the substrate temperature was 350°C, the deposition time wa...

Embodiment 2

[0088] Preparation of GaAs nano-optical resonance structure photocathode electron source by self-assembled nanosphere etching method:

[0089] 1. Material preparation: a p-type GaAs wafer substrate with a diameter of 3 inches requires its dislocation density to be lower than 10 3 cm -3 , and the uniformity is good, the crystal orientation is 3-4º towards the (100) plane, the thickness is 300-500nm, and the cutting area is 1.5*1.5cm 2 Small square substrate; 500nm diameter SiO fabricated by stober method 2 Nanospheres 1 ml.

[0090] 2. Cleaning: The substrate is ultrasonicated by acetone and alcohol for 10 minutes, soaked in deionized water for 10 minutes and then blown dry with nitrogen; SiO 2 The nanospheres were washed with alcohol, centrifuged at 4000r / min for 1 minute and 30 seconds, and repeated three times. Finally, deionized water was added for washing, then centrifuged, and naturally dried into powder.

[0091] 3. Hydrophilic treatment: the GaAs substrate after org...

Embodiment 3

[0100] Fabrication of GaAs nano-optical resonance structure photocathode electron source by electron beam etching process:

[0101] 1. Material preparation: a p-type GaAs wafer substrate with a diameter of 3 inches requires its dislocation density to be lower than 10 3 cm -3 , and the uniformity is good, the crystal orientation is 3° cut towards the (100) plane, and the thickness is 300-500μm;

[0102] 2. Substrate cleaning: Ultrasonic cleaning with acetone and alcohol for 10 minutes and then soaked in deionized water to effectively remove organic matter on the surface of the substrate;

[0103] 3. Coating: the substrate is placed on a homogenizer, the speed is 2000-3000r / min, and the time is 20-30 seconds to obtain a PMMA photoresist with a thickness of 80-200nm;

[0104] 4. Drying: Put the substrate coated with PMMA photoresist in step 3 into the rubber drying table to dry for 20-30s;

[0105] 5. Exposure pattern: use CAD software to design the exposure pattern, the spac...

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Abstract

The invention discloses a GaAs nano optical resonance structure photoelectric negative electrode electron source, and belongs to the technical field of photoelectric negative electrodes; the structureof the photoelectric negative electrode electron source comprises a P-type semiconductor substrate, a nano optical resonance emission layer active region and a surface activation layer from bottom totop in sequence. An optical resonance effect is generated by virtue of the nano optical resonance structure and the incident light effect, and a light field and charges are limited in the active region, so that the absorption rate of the incident light is greatly improved, the photoelectron conveying distance is shortened, and the influence of harmful photoelectric emission caused by surface light reflection on the quality of the electron beams can be reduced, thereby effectively improving the quantum efficiency and the quality of the electron beams. The GaAs nano optical resonance structurephotoelectric negative electrode electron source can be prepared by adopting nano-imprinting etching, self-assembled nanosphere etching, electron beam photoetching, focusing ion beam etching and the like, the technology is mature and the stability is high; and therefore, the photoelectric negative electrode electron source can be applied to the fields of large-scale electron accelerators, low-light-level night vision, scanning electron microscope and the like.

Description

technical field [0001] The invention relates to a photocathode electron source, in particular to a GaAs nanometer optical resonance structure photocathode electron source. [0002] The invention also relates to a preparation method of a photocathode electron source with a GaAs nano optical resonance structure. Background technique [0003] Electron sources are the core components of electron accelerators. Electron-positron colliders, electron-ion colliders, free electron lasers and other devices vigorously developed in my country all require electron sources to provide high-quality electron beams. Gallium arsenide (GaAs)-based semiconductor negative electron affinity (NEA) photocathode electron source has excellent qualities such as low energy dispersion, high brightness, and ultrashort pulse response. Wide application value. GaAs bulk material and strained thin film photocathode can achieve electron emission with spin polarization of 50% and 100% respectively, which has v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J1/34H01J9/12
CPCH01J1/34H01J9/12
Inventor 彭新村邹继军刘云邓文娟朱志甫王炜路冯林王智栋
Owner EAST CHINA UNIV OF TECH
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