Current-aided aluminum-doped zinc oxide film chemical texturing method

An aluminum-doped zinc oxide, thin film technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of insignificant texture effect of thin film, fast etching rate, difficult to control, etc., to improve light trapping ability and photoelectric conversion. Efficiency, Enhanced Light Scattering Properties, Improved Roughness Effect

Inactive Publication Date: 2015-09-30
SHAANXI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the former adopts the method of acid etching, the etching rate is fast, it is not easy to control, and the waste water will pollute the environment; the film suede effect produced by the latter is not significant, and cannot meet the requirements of the front electrode of silicon-based thin film solar cells

Method used

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  • Current-aided aluminum-doped zinc oxide film chemical texturing method
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  • Current-aided aluminum-doped zinc oxide film chemical texturing method

Examples

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Effect test

Embodiment 1

[0028] 1. Ultrasonic clean the 30mm×30mm glass substrate in acetone and ethanol for 10 minutes, then soak in 70°C RCA1 and RCA2 solutions for 20 minutes, then clean it with deionized water, and finally dry it with nitrogen. Put the cleaned glass substrate into the magnetron sputtering reaction chamber, preheat it for 60 minutes, pass the argon gas into the reaction chamber as the sputtering atmosphere, control the argon gas flow rate to 12 sccm, and the substrate temperature to 160°C. The injection pressure is 3mTorr, the power is 100W, the aluminum-doped zinc oxide is used as the target material, and the aluminum-doped zinc oxide film is deposited for 6600s to obtain the aluminum-doped zinc oxide film.

[0029] 2. Fix the electrodes at both ends of the deposited aluminum-doped zinc oxide film, immerse the middle part of the aluminum-doped zinc oxide film in the ammonium acetate aqueous solution, and immerse it in the ammonium acetate aqueous solution with a mass fraction of 5%...

Embodiment 2

[0033] In the step 2 of the embodiment 1, a current of 50mA is passed through a dual-circuit stabilized voltage and stabilized current power supply, and the other steps are the same as in the embodiment 1 to obtain a suede surface doped aluminum zinc oxide film.

Embodiment 3

[0035] In the step 2 of the embodiment 1, a 100mA current was passed through a two-way regulated voltage and current power supply, and the other steps were the same as in the embodiment 1 to obtain a textured aluminum-doped zinc oxide film.

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Abstract

The invention discloses a current-aided aluminum-doped zinc oxide film chemical texturing method. According to the method, assistant current is added while conventional chemical texturing of an aluminum-doped zinc oxide film, roughness of the textured surface of the aluminum-doped zinc oxide film is improved highly, light-scattering property of the aluminum-doped zinc oxide film is enhanced, the aluminum-doped zinc oxide film is suitable for making thin-film solar cells, and light trapping capacity and photoelectric conversion efficiency of the solar cells can be improved. The method is simple and easy to implement and suitable for large-area production.

Description

technical field [0001] The invention belongs to the technical field of transparent conductive films, and in particular relates to a method for preparing a suede surface of aluminum-doped zinc oxide transparent conductive films. Background technique [0002] Transparent conductive oxide film (TCO), as an optoelectronic information material with high visible light transmittance and low resistance, is widely used in thin film solar cells, flat panel displays, sensors and various optoelectronic devices. Al-doped zinc oxide thin film, as one of the transparent conductive oxide thin film materials, has excellent photoelectric properties, is cheap, non-toxic, and has good chemical and thermal stability, so it has received extensive attention. In addition, the transmittance of the Al-doped ZnO film after surface etching is not much different from that of the planar Al-doped ZnO film, but its suede structure has a very good light trapping effect, which can greatly increase the photoe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236
CPCY02E10/50H01L31/02363
Inventor 高斐李付贤王皓石周松杰武怡郑逍遥武慧君刘生忠
Owner SHAANXI NORMAL UNIV
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