Processing technology for preparing battery sheet by cutting silicon wafer with diamond wire
A diamond wire cutting and processing technology, applied in the field of solar cells, can solve problems such as high production costs, and achieve the effects of reduced cutting costs, low loss rate, and excellent substrate quality
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Embodiment 1
[0043] S1: Material selection:
[0044] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 3 μm .
[0045] S2: Texturing:
[0046] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 2um, bake in an oven at 90°C for 25min, expose to ultraviolet light, develop and corrode, and then place it in an oven at 120°C Bake for 15 minutes to form a photolithography mask layer on the front surface of the substrate;
[0047] Take hydrofluoric acid and nitric acid, mix and stir for 5 minutes to obtain the texturing solution, pour the texturing solution into the chamber where steam is generated, and adjust the temp...
Embodiment 2
[0059] S1: Material selection:
[0060] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 4 μm .
[0061] S2: Texturing:
[0062] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 3um, bake in a 90°C oven for 35min, expose to ultraviolet light, develop and corrode, and then place in a 120°C oven Bake for 20 minutes to form a photolithographic mask layer on the front surface of the substrate;
[0063] Take hydrofluoric acid and nitric acid, mix and stir for 8 minutes to obtain the texturing solution, pour the texturing solution into a steam-generating chamber, and adjust the temperature to 85°C; tak...
Embodiment 3
[0075] S1: Material selection:
[0076] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 4 μm .
[0077] S2: Texturing:
[0078] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 3um, bake in an oven at 90°C for 30min, expose to ultraviolet light, develop and corrode, and then place it in an oven at 120°C Bake for 18 minutes to form a photolithography mask layer on the front surface of the substrate;
[0079] Take hydrofluoric acid and nitric acid, mix and stir for 7 minutes to obtain the texturing solution, pour the texturing solution into the chamber where steam is generated, and adjust the temp...
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