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Processing technology for preparing battery sheet by cutting silicon wafer with diamond wire

A diamond wire cutting and processing technology, applied in the field of solar cells, can solve problems such as high production costs, and achieve the effects of reduced cutting costs, low loss rate, and excellent substrate quality

Active Publication Date: 2020-08-28
ECONESS ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although crystalline silicon solar cells have developed greatly in recent years, and the introduction of many new technologies has greatly improved the efficiency of crystalline silicon solar cells, the relatively high production cost is still the limit for the current development of the crystalline silicon cell industry. The biggest restrictive factor, so the research and development of efficient and cheap solar cells is the subject of the photovoltaic industry in all countries in the world.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] S1: Material selection:

[0044] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 3 μm .

[0045] S2: Texturing:

[0046] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 2um, bake in an oven at 90°C for 25min, expose to ultraviolet light, develop and corrode, and then place it in an oven at 120°C Bake for 15 minutes to form a photolithography mask layer on the front surface of the substrate;

[0047] Take hydrofluoric acid and nitric acid, mix and stir for 5 minutes to obtain the texturing solution, pour the texturing solution into the chamber where steam is generated, and adjust the temp...

Embodiment 2

[0059] S1: Material selection:

[0060] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 4 μm .

[0061] S2: Texturing:

[0062] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 3um, bake in a 90°C oven for 35min, expose to ultraviolet light, develop and corrode, and then place in a 120°C oven Bake for 20 minutes to form a photolithographic mask layer on the front surface of the substrate;

[0063] Take hydrofluoric acid and nitric acid, mix and stir for 8 minutes to obtain the texturing solution, pour the texturing solution into a steam-generating chamber, and adjust the temperature to 85°C; tak...

Embodiment 3

[0075] S1: Material selection:

[0076] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 4 μm .

[0077] S2: Texturing:

[0078] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 3um, bake in an oven at 90°C for 30min, expose to ultraviolet light, develop and corrode, and then place it in an oven at 120°C Bake for 18 minutes to form a photolithography mask layer on the front surface of the substrate;

[0079] Take hydrofluoric acid and nitric acid, mix and stir for 7 minutes to obtain the texturing solution, pour the texturing solution into the chamber where steam is generated, and adjust the temp...

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Abstract

The invention discloses a processing technology for preparing a battery sheet by cutting a silicon wafer through a diamond wire. The processing technology comprises the following steps of: selecting apolycrystalline silicon wafer obtained by diamond wire cutting as a substrate, sequentially putting the substrate into nitric acid and hydrofluoric acid for cleaning and polishing, and removing the damaged layer on the surface of the substrate; preparing a photoetching mask layer on the front surface of the substrate, texturing through a steam texturing method, and preparing a P-N junction on thefront surface of the substrate through a POCL3 liquid diffusion source thermal diffusion method; and finally performing wet etching, antireflection film plating, printing and sintering on the front surface of the substrate to obtain a finished product. The invention discloses a processing technology for preparing a battery sheet by cutting a silicon wafer through a diamond wire, wherein the method is reasonable in process design and simple and controllable in operation, selects the silicon wafer cut by the diamond wire as the substrate for processing, and prepares the battery sheet with excellent electrical performance, so that the open-circuit voltage, short-circuit current and fill factor of the solar cell are improved, the conversion efficiency is improved, the purposes of reducing thecost and improving the efficiency are achieved, and high practicality is achieved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a processing technology for preparing solar cells by cutting silicon chips with diamond wires. Background technique [0002] At present, the research and development of new energy mainly focus on renewable energy such as solar energy, wind energy, and geothermal energy. Due to the abundant and widely distributed solar energy resources, it is the new energy with the most development potential. Today, with the development of modern production, fossil fuels such as oil, coal, and natural gas cannot meet the energy demand for development, and the extensive use of fossil energy has led to global warming and frequent natural disasters. Due to its advantages of convenience, safety and reliability, and sufficient resources, solar energy has become a new type of industry supported and developed by countries all over the world. [0003] Although crystalline silicon solar cells have de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/0224H01L31/0236
CPCH01L31/1804H01L31/022425H01L31/02363H01L31/02168Y02E10/547Y02P70/50
Inventor 赵卫东刘旦生鞠飞王斯明刘才广江兴峰
Owner ECONESS ENERGY
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