266results about How to "Reduce cutting costs" patented technology

The invention discloses a diamond bead string and a manufacturing method thereof as well as a diamond bead string rope saw without a base body supporting layer. The manufacturing method of the diamond bead string comprises the following steps of: uniformly mixing metal powder, diamond and an organic binding agent; manufacturing a rough blank of the diamond bead string through a pre-hot-pressing modeling or metal injection molding (MIM) process; and obtaining a finished product of the diamond bead string by placing the rough blank in a high-temperature furnace for one-step sintering modeling process after degreasing. The manufacturing method of the diamond bead string provided by the invention can be used for sintering the rough blank in one step to form an entire cylindrical bead string without a bead string base body layer; the external diameter of the bead string becomes smaller, so that the bead string can be directly stringed into a steel wire rope to obtain a diamond rope saw with a smaller external diameter; the bead string is molded through one step without a last-stage permeation process, so that the production cost of the diamond bead string is greatly reduced. Furthermore, the diameter of the diamond rope saw is smaller, and a cutting seam of a stone material to be cut is smaller, so that the yield of rough stone block is improved. The manufacturing method of the diamond bead string is beneficial to large-range popularization and utilization of the diamond rope saw.

A technology and apparatus for manufacturing the antiwear combined cutting diamond wire features that the diamond microparticles are inlaid in the subsurface of steel wire by squeezing or punching. Its advantages are long length up to 60 km, uniform diameter, and high antiwear performance and tension strength.

A heat sink package structure and a method for fabricating the same are disclosed. The method includes mounting and electrically connecting a semiconductor chip to a chip carrier, forming an interface layer or a second heat dissipating element having the interface layer on the semiconductor chip and installing a first heat dissipating element having a heat dissipating portion and a supporting portion onto the chip carrier. The method further includes forming openings corresponding to the semiconductor chip in the heat dissipating portion, and forming an encapsulant for covering the semiconductor chip, the interface layer or the second heat dissipating element, and the first heat dissipating element. A height is reserved on top of the interface layer for the formation of the encapsulant for covering the interface layer. The method further includes cutting the encapsulant along edges of the interface layer, and removing the redundant encapsulant on the interface layer. Therefore, the drawbacks of the prior art of the burrs caused by a cutting tool for cutting the heat dissipating element and wearing of the cutting tool are overcome.

The invention relates to an efficient electrode wire for precision mould cutting. The efficient electrode wire comprises a core material and a shell layer wrapping the surface of the core material, the core material is made of yellow copper from the processes of smelting, casting, stretching and annealing, the shell layer is a discontinuous shell layer formed by heating, continuously drawing and continuously annealing a zinc metal plating layer plated on the yellow copper core material, and the discontinuous shell layer comprises shell particles which radially cover 40-90% of the surface of the core material and are distributed at intervals along an axial direction of the surface of the core material. The invention further relates to a preparation method of the electrode wire. The preparation method is simple in production technology, strong in operability, less in preparation steps, simple in production equipment and easy to prepare satisfactory products and realize large-scale and automated production. The efficient electrode wire is strong in universality and is particularly suitable for precision mould cutting.

The invention is concerned with the thermolysis packaging structure and the making method, it is: attaches the semiconductor chip with the chip carrying piece by electricity to form the surface or the second heat sink with surface, and attaches the first heat sink with thermolysis part that is opposites the open whole of the semiconductor chip and the support part, with the chip carrying piece, next, is forms the surface or the second heat sink with surface that covers the semiconductor chip and the packaging colloid of the first heat sink, and there is must certain space leaves for the packaging colloid covering the surface, which is the way of preventing the problems of pressure damage and glue overflow of the current making method, and to the next step is incises the packaging colloid follows the surface edge and removes the unwanted, losses heat for the semiconductor chip, in order to prevent the problems of raw edge and tools wastage, which reduces the cost efficiently.

The invention relates to a consolidation grinding material wire-electrode cutting method and dedicated cutting fluid. The existing consolidation grinding material wire-electrode cutting is bad in cutting surface quality, possesses a plurality of deep check lines and tiny damage and is high in surface roughness, and meanwhile, swarf and dropped grinding material grains are easily adhered between the cutting line surface and grinding material grains to lower cutting force of cutting lines. The invention provides the novel consolidation grinding material cutting method and the dedicated cutting fluid used for the consolidation grinding material cutting method. Due to the development of the cutting fluid formula, the consolidation grinding material wire-electrode cutting method and the dedicated cutting fluid used for the consolidation grinding material cutting method overcome the technical limits, obviously improve check lines and tiny damage of the cutting surface, reduce roughness, reduce phenomenon of swarf attachment, improve cutting efficiency, reduce surface modification processing requirements such as grinding, polishing and the like of the cutting surface after cut and reduce cutting cost and follow-up process cost.

The invention discloses high-performance cutter coating material and a smelting method of the high-performance cutter coating material. The coating material comprises Al, Co, Cr, Fe, Ni, Mo, Ti, Si, Al, Co, Cr, Fe, Ni, Mo, Ti and Si in mol ratio of 1: 1: 1: 1: 1: 1: 0.5: 0.5. Tests show that the hardness of the high-performance cutter coating material AlCoCrFeNiMoTi0.5Si0.5 is 1000.9HV0.200; the hardness is not changed basically after the coating material is annealed for 10h at 600 DEG C; and the hardness is reduced by 8% and 12% after the coating material is annealed at 800 DEG C and at 1100 DEG C for 10h; the high-entropy alloy is proven to have good high-temperature softening resistance and can be used for manufacturing cutter coating material; the cutting performance of a cutter is improved drastically in comparison with the prior cutter material. The alloy has no limit of application range when being used as the cutter coating, so that the cutter can be used for cutting various materials.

The invention relates to a COB packaging structure of a light-emitting diode. The COB packaging structure comprises a substrate, n drive chips and n light-emitting diode chip sets, wherein each light-emitting diode chip set comprises N light-emitting diode chips, n and N are integers, n is larger than or equal to 1, N is larger than or equal to 1, the n drive chips and the n light-emitting diode chip sets are packaged on the front face of the substrate in a modular mode to form n sets of COB display modules, the n drive chips and the n light-emitting diode chip sets form lamp-driver co-plane devices in a one-to-one connection mode, a fixed number of bonding pads are arranged on the back face of the substrate, and all the drive chips and all the light-emitting diode chip sets are communicated with the bonding pads on the back face of the substrate in a routing and hole passing mode. The n lamp-driver co-plane devices are packaged to form a new COB device, the number of the bonding pads on the back face of the substrate is fixed and independent of the number of sets of the drive chips, and therefore a large number of pins are saved, external device cables are greatly reduced, and the higher density can be achieved compared with the density achieved through traditional packaging.

The invention provides a cutting process offline coordination method of multi-beam type water jet cutting system. The method comprises the following steps: dividing a processing area of the multi-beam water cutting system; inputting a CAD (computer-aided design) file of a large workpiece to be cut, and decomposing and allocating the cutting contour accordingly to form the CAD sub-file of the cutting part of each beam system; importing each CAD sub-file into water cutting CAM (computer-aided manufacturing) software to generate an executable NC (numerical control) code file, and reading the NC code file to obtain a sequence of the cutting path of each beam system; calculating a time window executed by each path in each cutting sequence, and coordinating the time windows in an interference area so as to achieve the purpose of avoiding mutual interference between two adjacent beams; and writing the coordination result into the original NC code file, downloading the NC code file to a CNC (computer numerical controller) of each beam system, and executing the multi-beam water cutting process. According to the invention, smooth and non-interference execution of a parallel cutting processes of a water cutting system with more than three beams can be realized.

The disclosure is directed to a cutting tool assembly used for creating grooves in a microreplication tool. The cutting tool assembly includes a mounting structure and multiple diamonds aligned in the mounting structure to a tolerance of less than 10 microns. For example, first and second tool shanks having first and second diamond tips can be positioned in the mounting structure such that a cutting location of the first diamond tip is identical to a cutting location of the second diamond tip. However, the second diamond tip may be a defined distance further away from the mounting structure than the first diamond tip, or the second diamond tip may have a different shape than the first diamond tip. In this manner, the first diamond tip may cut a groove into a work piece and the second diamond tip may cut a sub-feature into the groove to create a multi-featured groove.

A heat dissipating semiconductor package and a fabrication method thereof are provided. A semiconductor chip is mounted on a chip carrier. A heat sink is mounted on the chip, and includes an insulating core layer, a thin metallic layer formed on each of an upper surface and a lower surface of the insulating core layer and a thermal via hole formed in the insulating core layer. A molding process is performed to encapsulate the chip and the heat sink with an encapsulant to form a package unit. A singulation process is performed to peripherally cut the package unit. A part of the encapsulant above the thin metallic layer on the upper surface of the heat sink is removed, such that the thin metallic layer on the upper surface of the heat sink is exposed, and heat generated by the chip can be dissipated through the heat sink.

This invention provides a long-life Sialon insert, the cutting edge of which is resistant to wear and hard to fracture, and a cutting tool equipped with the Sialon insert.

Provided are a Sialon insert made of a Sialon sintered body including a Sialon phase comprising an α-Sialon and a β-Sialon, and at least one element, originating from a sintering aid, selected from the group consisting of Sc, Y, Dy, Yb, and Lu in an amount of 0.5 to 5 mol % in terms of an oxide thereof, wherein an α-value, which shows the proportion of the α-Sialon in the Sialon phase, is from 10% to 40%; the β-Sialon has a value of Z from 0.2 to 0.7 wherein Z is a variable of the formula Si_6-ZAl_ZO_ZN_8-Z and within a range: 0<Z≦4.2; and the sintered body has an average thermal expansion coefficient of 3.5×10⁻⁶/K or less at temperatures of room temperature to 1000° C., and a thermal conductivity of 10 W/m·K or more at temperatures of room temperature to 1000° C., and a cutting tool comprising a holder equipped with the Sialon insert.

The invention discloses a diamond particle reinforced metal matrix composite material and a preparation method and application thereof. The preparation method comprises the steps of 1, preparing an interface layer; 2, preparing a metal layer; 3, premolding; and 4, carrying out densification treatment. According to the diamond particle reinforced metal matrix composite material and the preparationmethod and application thereof, the adopted sintering of a two-step solid-phase method combined with the premolding and densification treatment is characterized by complementing for each other, fostering strengths and circumventing weaknesses, so that the the characteristic that the solid-phase sintering method capable of preparing a material with smaller particle size is retained, the size of thematerial prepared in a single batch is larger, the thickness reaches the centimeter level or a higher level, the production efficiency is higher, and the cost is greatly reduced; the prepared material has higher thermal conductivity, adjustable thermal expansion coefficient and better uniformity and reliability, and can be directly cut for processing by an electric spark wire; and meanwhile, thepremolding before the densification treatment can solve the problem that a bag sintered by directly adopting hot isostatic pressing is deformed too much so as to result in too much waste of the material, and the material utilization rate is higher.

The invention discloses a process adopting an extra-fine steel wire to cut a silicon rod. The process comprises the working procedures of preparing mortar, bonding the rod, loading the rod, carrying out preheating for cutting, carrying out cutting, discharging and the like. Parameters in the cutting process are set. The silicon rod can be cut into silicon wafers with the required size. According to the cutting process, the rate of forming the silicon wafers of each kilogram in a cutting mode can be effectively increased, the cutting ability is improved, cutting consumption and abrasion loss are reduced, and the cutting cost is lowered.

The invention relates to an amorphous modified cutting steel wire, which consists of a metal wire and an amorphous alloy layer, wherein the amorphous alloy layer is coated on the outer surface of the metal wire and is made of nickel-based amorphous alloy. The nickel-based amorphous alloy modified steel wire can further improve cutting efficiency and reduce cost.

The invention discloses a silicon-block cutting method, which relates to the technical field of crystalline-silicon manufacture. The method comprises the following steps of respectively preparing the usage amounts of recycled silicon carbide and a recycled suspending liquid used in mortar as 40 to 100 percent, modulating the density of the mortar as 1.625 to 1.635kg/L, and adding the mortar according to the effective cutting length of a silicon block in the cutting process, wherein the adding proportion of the added mortar is 0.235 to 0.3L/mm, and the adding amount of the mortar is equal to the effective cutting length of the silicon block multiplied by the adding proportion of the mortar; selecting a guiding wheel to enable the notch of the guiding wheel to be matched with a steel wire; setting the cutting speed of the steel wire as 12 to 14m/s, the moving speed of a worktable as 250 to 330mu m/min and the flow quantity of the mortar as 130 to 160kg/min, cutting the silicon block, and cooling; cutting a structural wire, the outer surface of which is provided with spiral bulges and is coated with an anti-oxidation layer by the steel wire. According to the invention, through the technical matching property of the cutting speed of the steel wire, the moving speed of the worktable and the flow quantity of the mortar, the updating of the mortar is reduced, the production cost can be lowered, the rate of fragments generated in silicon-block cutting is reduced, the rate of finished products is increased, and the quality of the products is improved.

The present invention provides a cutting method combining deep hole cutting and small well cutting, and belongs to the technical field of ore belt mining. The invention adopts a cutting process combining deep hole cutting and small well cutting, not only cancels the roadway cutting, simplifies the cutting process, and reduces cutting cost significantly, but also provides an experimental basis to realize cutting of deep hole cutting blasting, and has strong promotion and application value. Medium-length holes on both sides of the small well are cut by dual radiation center construction. Taking the small well as a free surface, delay blasting is performed from small well center to the two sides to realize medium-length hole blasting pull trough without roadway cutting, and blasting initial free surfaces are created for follow-up blasting of medium-length hole breaking ground. The long axis direction of a cutting well is perpendicular to the row surface of the cutting deep hole, and the length direction is greater than the row spacing of the cutting deep hole, therefore the deep hole blasting gets the maximum free surface, greatly enhancing the blasting success rate which can reach 100%.

The invention discloses a diamond multi-wire electric spark discharge cutting wire cutting device. The diamond multi-wire electric spark discharge cutting wire cutting device comprises a cutting device body. A first cutting roller is arranged on one side of the middle of the cutting device body, and a second cutting roller is arranged on one side of the first cutting roller. A first driving spindle is arranged at the front end of the first cutting roller, and a second driving spindle is arranged at the front end of the second cutting roller. A first driven spindle is arranged on the outer surface of the rear end of the first cutting roller. According to the diamond multi-wire electric spark discharge cutting wire cutting device, a fixing abrasive diamond wire saw and electric spark wire cutting are combined, then the diamond wire saw and electric spark combined machining is generated, the machining efficiency of diamond multi-wire cutting photovoltaic silicon wafers is further improved, and the machining cost is reduced. In order to solve the machining quality problems of micro cracks on the machined surfaces of diamond wire multi-wire cutting machining semiconductor silicon wafersand the like, the electric spark discharge machining is added on the basis of diamond wire multi-wire cutting so as to achieve the improvement of the quality of the machined surfaces.

The invention relates to a solar silicon wafer wire cutting guide roller and a manufacturing method and a special film coating machine and an electroplating machine. the method comprises the following steps of: making a V-shaped guide roller base body made from composite polyurethane, plating a metal composite layer on the surface of the V-shaped guide roller base body, and plating a wear-resistant composite layer on the surface of the metal composite layer,wherein the metal composite layer is compounded by one or more then one of nickel, titanium, copper and chromium, the wear-resistant composite layer is a antiseize polymer in which wear-resistant particles are contained. According to the invention, under the condition of not changing the existing cutting technique, the service life of the V-shaped guide roller manufactured by the invention is prolonged, the replacement frequency can be reduced, the cutting yield is stabilized, the equipment utilization ratio is improved, and the overall cutting cost is lowered.