Diamond particle reinforced metal matrix composite material and preparation method and application thereof

A technology of diamond particles and composite materials, which is applied in the field of diamond particle reinforced metal matrix composite materials and its preparation, which can solve the problems of low density, poor material uniformity, and difficulty in wire electric discharge processing, etc., and reduce porosity and thickness. Uniform, eliminate the effect of uneven powder mixing

Inactive Publication Date: 2020-08-11
成都本征新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the present invention provides a diamond particle reinforced metal matrix composite material and its preparation method and application, which can effectively solve the problems of poor material uniformity, low density and inability to use electric sparks in the existing preparation process. Difficult problems in wire cutting and processing

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  • Diamond particle reinforced metal matrix composite material and preparation method and application thereof
  • Diamond particle reinforced metal matrix composite material and preparation method and application thereof

Examples

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Effect test

Embodiment 1

[0038] A method for preparing a diamond particle reinforced metal matrix composite material, comprising the following steps:

[0039] (1) Metallization on the surface of diamond particles: a layer of TiC was first deposited on the surface of diamond particles with a particle size of 20 μm by magnetron sputtering, with a coating thickness of 100 nm.

[0040] (2) Continuously deposit Cu layer on the surface of TiC layer by electroless plating method, so that the volume content of diamond reaches 55%.

[0041] (3) Preforming: put the above-mentioned diamond powder with coating into the mold and make it by cold pressing The billet, pressure 550MPa, holding time 15min.

[0042] (4) Densification treatment: put the billet into a stainless steel sheath, pump air and seal it, then hot isostatic press, the heating rate is 6°C / min, the sintering temperature is 750°C, the pressure is 110MPa, the holding time is 1h, and the bag is removed after cooling in the furnace. Set it up and get...

Embodiment 2

[0045] A method for preparing a diamond particle reinforced metal matrix composite material, comprising the following steps:

[0046] (1) Metallization on the surface of diamond particles: on the surface of diamond particles with a particle size of 40 μm, a layer of Cr is first deposited on the surface of the diamond by vacuum evaporation, and the thickness of the coating is 500 nm.

[0047] (2) Continuously deposit Cu layer on the surface of Cr layer by electroless plating method, so that the volume content of diamond reaches 62%.

[0048] (3) Preforming: put the above-mentioned diamond powder with coating into the mold and make it by vacuum hot pressing and sintering The billet, temperature 820 ℃, pressure 20MPa, time 60min.

[0049] (4) Densification treatment: put the blank into a hot isostatic press for densification treatment, the heating rate is 8°C / min, the sintering temperature is 880°C, the pressure is 120MPa, the holding time is 1h, and it is ready after cooling i...

Embodiment 3

[0052] A method for preparing a diamond particle reinforced metal matrix composite material, comprising the following steps:

[0053] (1) Metallization on the surface of diamond particles: on the surface of diamond particles with a particle size of 65 μm, a layer of W was deposited on the surface of the diamond by salt bath plating, and the thickness of the coating was 1000 nm.

[0054] (2) Continue to deposit Ag layer on the surface of W layer by electroplating method, so that the volume content of diamond reaches 90%.

[0055] (3) Preforming: mixing the above-mentioned diamond powder with coating and Ag powder with a particle size of 10-20 μm, so that the volume content of diamond reaches 80%. The mixed powder is then loaded into a mold and made by spark plasma sintering The billet temperature is 650°C, the pressure is 15MPa, and the time is 10min.

[0056] (4) Densification treatment: put the billet into a stainless steel sheath, pump air and seal it, then hot isostatic ...

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Abstract

The invention discloses a diamond particle reinforced metal matrix composite material and a preparation method and application thereof. The preparation method comprises the steps of 1, preparing an interface layer; 2, preparing a metal layer; 3, premolding; and 4, carrying out densification treatment. According to the diamond particle reinforced metal matrix composite material and the preparationmethod and application thereof, the adopted sintering of a two-step solid-phase method combined with the premolding and densification treatment is characterized by complementing for each other, fostering strengths and circumventing weaknesses, so that the the characteristic that the solid-phase sintering method capable of preparing a material with smaller particle size is retained, the size of thematerial prepared in a single batch is larger, the thickness reaches the centimeter level or a higher level, the production efficiency is higher, and the cost is greatly reduced; the prepared material has higher thermal conductivity, adjustable thermal expansion coefficient and better uniformity and reliability, and can be directly cut for processing by an electric spark wire; and meanwhile, thepremolding before the densification treatment can solve the problem that a bag sintered by directly adopting hot isostatic pressing is deformed too much so as to result in too much waste of the material, and the material utilization rate is higher.

Description

technical field [0001] The invention belongs to the technical field of metal-matrix composite materials, and in particular relates to a diamond particle-reinforced metal-matrix composite material and its preparation method and application. Background technique [0002] Power semiconductor devices will generate a large amount of Joule heat during operation. If the heat cannot be dissipated in time, the junction temperature of the semiconductor chip will continue to rise, which will affect the performance and working life of the device. In severe cases, the chip will be directly burned. Currently widely used heat sink materials such as W / Cu, Mo / Cu, SiC / Cu, and SiC / Al have a thermal conductivity of only 170-230W / mK, which is difficult to meet the packaging and use requirements of higher power devices. Therefore, the thermally conductive substrate material has become a bottleneck problem for semiconductor power devices to continue to develop to higher power. [0003] Diamond pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C26/00C22C1/04B22F1/02B22F3/04B22F3/105B22F3/15
CPCC22C26/00C22C1/04B22F3/04B22F3/105B22F3/15B22F2003/1051B22F1/17
Inventor 史长明
Owner 成都本征新材料技术有限公司
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