Process adopting extra-fine steel wire to cut silicon rod

A technology of wire cutting and multi-wire cutting machines, applied in the direction of fine working devices, manufacturing tools, stone processing equipment, etc., can solve the problems of large consumption of consumables, high cutting costs, and low production rate, so as to improve the cutting capacity , Reduce cutting consumption and wear, improve the effect of film output rate

Inactive Publication Date: 2014-07-23
阳光硅谷电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, due to the different usage specifications of steel wires, the output rate per kilogram is low, the consumption of consumables is large, and the cutting cost is high

Method used

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  • Process adopting extra-fine steel wire to cut silicon rod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The main equipment and raw materials in this embodiment are: multi-wire cutting machine model: MWM442DM produced by NTC; raw materials: 156S monocrystalline silicon rod, outer diameter 200mm, side length 156mm, length 330mm, main roller 5 groove pitch 325μm.

[0033] The goal is to use ultra-fine 0.10mm (diameter) steel wires to cut silicon wafers. The specification is 200μm thick monocrystalline silicon wafers. The above-mentioned equipment cutting process is used. The specific steps are as follows:

[0034] (1) Mortar configuration: Dry silicon carbide at a temperature of 60-100°C and a drying time of more than 360 minutes. This example uses 400 minutes. Calculate the amount of cutting fluid and silicon carbide according to the ratio. The mass ratio is 1:0.9 for configuration, and the mortar configuration is carried out in the mixing tank. The mixing time is 6 hours. The cutting fluid can be the crystal silicon cutting fluid of Ningjin Fine Chemical;

[0035] (2) Adhe...

Embodiment 2

[0045] The main equipment and raw materials in this embodiment are: multi-wire cutting machine model: PV600 multi-wire cutting machine produced by NTC; raw material: polysilicon rod, side length 156mm, length 650mm, main roller groove pitch 328μm.

[0046]The specifications of the target cutting polysilicon wafers are 195 μm in thickness, and the following is to cut the silicon wafers with a cutting wire with a diameter of 0.10 mm.

[0047] Using the above equipment to cut solar silicon wafers with ultra-thin steel wires is as follows:

[0048] (1) Mortar configuration: Dry silicon carbide at a temperature of 60-100°C and a drying time of more than 360 minutes. This example uses 400 minutes. Calculate the amount of cutting fluid and silicon carbide according to the ratio. The mass ratio is 1:1.0 for configuration, and the mortar configuration is carried out in the mixing tank. The mixing time is 6 hours. The cutting fluid can be the crystal silicon cutting fluid of Ningjin Fin...

Embodiment 3

[0057] The main equipment and raw materials in this embodiment are: multi-wire cutting machine model: PV800 produced by NTC; raw material: 156SR monocrystalline silicon rod, the groove distance of the main roller is 327μm, and the specification of the target cutting silicon wafer is 0.2mm in thickness. The diameter used is as follows: 0.10mm cutting line for silicon wafer cutting.

[0058] Using the ultra-fine steel wire cutting process of the above equipment, the specific steps are as follows:

[0059] (1) Mortar configuration: Dry silicon carbide at a temperature of 60-100°C and a drying time of more than 360 minutes. This example uses 400 minutes. Calculate the amount of cutting fluid and silicon carbide according to the ratio. The mass ratio is 1:1.2 for configuration, and the mortar configuration is carried out in the mixing tank, and the mixing time is 6h;

[0060] (2) Sticking stick: Sticking stick: silicon stick is glued with silicon stick, the curing agent and glue a...

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Abstract

The invention discloses a process adopting an extra-fine steel wire to cut a silicon rod. The process comprises the working procedures of preparing mortar, bonding the rod, loading the rod, carrying out preheating for cutting, carrying out cutting, discharging and the like. Parameters in the cutting process are set. The silicon rod can be cut into silicon wafers with the required size. According to the cutting process, the rate of forming the silicon wafers of each kilogram in a cutting mode can be effectively increased, the cutting ability is improved, cutting consumption and abrasion loss are reduced, and the cutting cost is lowered.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon, and in particular relates to a process for cutting silicon rods by using superfine steel wires. Background technique [0002] The basis of modern information technology and modern electronic technology is semiconductor technology, and silicon material is the most important semiconductor material. At present, more than 80% of solar cell products need to be produced by cutting silicon rods. Although the cost of solar cell production and module manufacturing has dropped considerably in recent years, the cost of wire cutting is still high, accounting for 30% of the production cost of silicon wafers. Multi-wire cutting is a non-chemical physical processing method that does not affect the characteristics of the workpiece. Through the high-speed reciprocating motion of the cutting wire, the mortar is brought into the workpiece processing area for grinding, and finally the workpiece is cut i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04
Inventor 王建锁范靖刘明辉梁宁孙德龙
Owner 阳光硅谷电子科技有限公司
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