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Wet etching-based preparation method for light trapping structure with Ag nanowires embedded into silicon surface

A technology of wet etching and light trapping structure, applied in the fields of photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of reducing the service life of transparent conductive electrodes, increasing the cost of electrodes, etc., and improving the light trapping ability , Increase the contact area, the effect of no special requirements

Inactive Publication Date: 2017-10-27
YANTAI NANSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of organic materials further increases the cost of electrodes, and the possible aging and decomposition of organic materials will also significantly reduce the service life of transparent conductive electrodes.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] a. Clean the silicon wafer: soak the silicon wafer in analytical pure acetone for 2 minutes at room temperature, put the silicon wafer soaked in acetone into an ultrasonic container filled with deionized water, and clean it for 5 minutes; use CP4A lotion, Scratch the surface of the ultrasonically treated silicon wafers until the surface roughness is 0.9nm; put the silicon wafers treated with CP4A washing solution into 7% hydrofluoric acid aqueous solution, soak for 7min, and the silicon wafers treated with hydrofluoric acid aqueous solution Soak the wafer in an ultrasonic container filled with deionized water, wash it for 4 minutes to obtain a silicon wafer with a clean surface, blow dry the silicon wafer with nitrogen gas, and store it in a desiccator;

[0020] b. Prepare Ag nanowire suspension: Add Ag nanowires with a diameter of 90nm and a length of 20μm into an ultrasonic container filled with ethanol. W / cm 3 Disperse for 4 minutes under ultrasonic wave to obtain A...

Embodiment 2

[0029] a. Clean the silicon wafer: soak the silicon wafer in analytical pure acetone for 2 minutes at room temperature, put the silicon wafer soaked in acetone into an ultrasonic container filled with deionized water, and clean it for 3 minutes; use CP4A lotion, Scratch the surface of the ultrasonically treated silicon wafers until the surface roughness is 0.7nm; put the silicon wafers treated with CP4A washing solution into 7% hydrofluoric acid aqueous solution, soak for 6min, and put the silicon wafers treated with hydrofluoric acid aqueous solution Soak the wafer in an ultrasonic container filled with deionized water, wash it for 4 minutes to obtain a silicon wafer with a clean surface, blow dry the silicon wafer with nitrogen gas, and store it in a desiccator;

[0030] b. Preparation of Ag nanowire suspension: Add Ag nanowires with a diameter of 120 nm and a length of 40 μm into an ultrasonic container filled with ethanol. The mass ratio of Ag nanowires to ethanol is 1:100....

Embodiment 3

[0039] a. Clean the silicon wafer: soak the silicon wafer in analytical pure acetone for 2 minutes at room temperature, put the silicon wafer soaked in acetone into an ultrasonic container filled with deionized water, and clean it for 5 minutes; use CP4A lotion, Scratch the surface of the ultrasonically treated silicon wafers until the surface roughness is 0.4nm; put the silicon wafers treated with CP4A washing solution into 7% hydrofluoric acid aqueous solution, soak for 7min, and the silicon wafers treated with hydrofluoric acid aqueous solution Soak the wafer in an ultrasonic container filled with deionized water, wash it for 4 minutes to obtain a silicon wafer with a clean surface, blow dry the silicon wafer with nitrogen gas, and store it in a desiccator;

[0040] b. Preparation of Ag nanowire suspension: Add Ag nanowires with a diameter of 150nm and a length of 20μm into an ultrasonic container filled with ethanol. W / cm 3 Disperse for 4 minutes under ultrasonic wave to ...

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Abstract

The invention relates to a wet etching-based preparation method for a light trapping structure with Ag nanowires embedded into a silicon surface. The preparation method comprises the following steps of effectively dispersing the Ag nanowires in an ethanol solution by a low-power ultrasonic dispersion means; uniformly coating the dispersed Ag nanowires on a surface of a silicon wafer by a spin-coating mode; and improving contact between the Ag nanowires and the silicon wafer by an annealing mode. By etching of an etching liquid, the Ag nanowires are embedded into the silicon surface to prepare a novel light trapping, resistance reduction and efficiency improving structure. By the structure, the contact area between the Ag nanowires and the silicon surface is remarkably expanded, and meanwhile, the light trapping capability of the Ag nanowires in silicon is greatly improved within a visible light spectral range. The design and the preparation process provide a novel technical means for improving the efficiency of a device such as a silicon thin film solar cell and an LED.

Description

technical field [0001] The invention belongs to the technical field of preparation of transparent conductive electrodes of Si-based solar cells, and specifically relates to a preparation method of a light-trapping structure embedded with Ag nanowires on a silicon surface based on wet etching. Background technique [0002] As an important one-dimensional nanomaterial, Ag nanowires have both excellent electrical conductivity and flexibility of macroscopic materials, as well as good light transmission properties, so they are widely used in transparent heaters, LEDs, and solar cells. Electrode preparation has aroused the general interest of researchers. Due to the wide source of Ag nanowire raw materials and low cost, it gradually occupies a leading position in the transparent conductive electrode preparation market. With the continuous development and progress of transparent conductive electrode technology, improving light transmittance and reducing electrode resistance are th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02366H01L31/1884H01L31/1888Y02E10/50Y02P70/50
Inventor 戴菡房洪杰孙杰余鑫祥赵俊凤黄同瑊吕正风
Owner YANTAI NANSHAN UNIV
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