55results about How to "Suppresses light absorption" patented technology

This optical modulator includes a substrate and a phase modulation unit on the substrate, said phase modulation unit including: a first traveling-wave electrode, a second traveling-wave electrode, and an optical waveguide configured from a first cladding layer, a semiconductor layer, which is laminated on the first cladding layer, and has a refractive index that is higher than that of the first cladding layer, and a second cladding layer, which is laminated on the semiconductor layer, and has a refractive index that is lower than that of the semiconductor layer. The semiconductor layer is provided with: a rib section, which is formed in the optical axis direction of the optical waveguide, and is to be the core of the optical waveguide; a first slab section formed in the optical axis direction on one side of the rib section; a second slab section formed in the optical axis direction on the other side of the rib section; a third slab section formed in the optical axis direction on the first slab section side opposite to the rib section; and a fourth slab section formed in the optical axis direction on the second slab section side opposite to the rib section. The first slab section is formed thinner than the rib section and the third slab section, and the second slab section is formed thinner than the rib section and the fourth slab section.

A light-emitting device includes a substrate; a light-emitting element mounted on the substrate; a first light-transmissive member bonded to an upper surface of the light-emitting element via an adhesive; and a second light-transmissive member placed on an upper surface of the first light-transmissive member. In a plan view of the light-emitting device, a peripheral edge of a lower surface of the first light-transmissive member is positioned more inward than a peripheral edge of the upper surface of the light-emitting element. The adhesive extends from the upper surface of the light-emitting element to a lower surface of the second light-transmissive member, the adhesive covers a side surface of the first light-transmissive member, and the adhesive is separated from the substrate.

The invention relates to an organic electroluminescence element. The present invention provides an organic EL element having a multi-photon structure, in which optical absorption in the visible region caused by a charge-transfer complex in a conventional intermediate layer structure is inhibited, and the resistance of this intermediate layer to a counter career is improved, thus allowing high efficiency and a long operation life of the element. The element is arranged to be formed on a substrate 1 and have a multi-photon structure in which a plurality of light emitting units 4 including at least one light emitting layer are stacked via an intermediate layer 5 between an anode layer 2 and a cathode layer 3 which is a counter electrode, the above-mentioned intermediate layer 5 is formed by mixing or stacking an electron accepting material or an electron donating material and an organic compound, so as to avoid formation of a charge-transfer complex.

A surface emitting laser having a photonic crystal layer 130 on a substrate 105 with an active layer therebetween, in which the photonic crystal layer includes at least a first periodic structure for resonating in an in-plane direction and a second periodic structure for modulating a light intensity distribution in an in-plane direction. The light intensity in the photonic crystal layer is periodically distributed to a region having high light intensity and a region having low light intensity by the second periodic structure. Further, a conductive film 170 for performing current injection into the active layer is selectively provided just above the region having low light intensity. The surface emitting laser provides suppression of light absorption and highly efficient current injection into an active layer to attain a high power.

A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask.

An oligoaniline compound represented by the formula (1) can provide a charge transporting thin film which shows a suppressed coloration in the visible range. Use of this thin film makes it possible to ensure a color reproducibility of a device without lowering the color purity of an electroluminescent light or a light having passed through a color filter.wherein R1 to R10 independently represent each a hydrogen atom, a halogen, etc.; m and n independently represent each an integer of 1 or more while satisfying the condition m+n≦20; and X is a structure represented by any of the following formulae (4) to (10), etc.;wherein R21 to R36 independently represent each a hydrogen atom, a hydroxyl group, etc.; p and q represent each an integer of 1 or more while satisfying the conditions p≦20 and q≦20; and W1s independently represent each —(CR1R2)p-, —O—, —S—, etc.

In a top emission type organic EL display device, brightness gradient in a screen is reduced while keeping a screen brightness. A reflection film is formed under a lower electrode and the light from an organic EL layer is emitted through an upper electrode. Light absorption of the upper electrode is larger on the side of a shorter wavelength. When a film thickness of the upper electrode is enlarged in order to reduce the brightness gradient in a screen, the film thicknesses of the upper electrodes for a red pixel and a green pixel are enlarged without enlarging the film thickness of the upper electrode for a blue pixel. This makes it possible to reduce the brightness gradient as well as to suppress the light absorption of the upper electrode.