55results about How to "Suppresses light absorption" patented technology

A light-emitting device includes a substrate; a light-emitting element mounted on the substrate; a first light-transmissive member bonded to an upper surface of the light-emitting element via an adhesive; and a second light-transmissive member placed on an upper surface of the first light-transmissive member. In a plan view of the light-emitting device, a peripheral edge of a lower surface of the first light-transmissive member is positioned more inward than a peripheral edge of the upper surface of the light-emitting element. The adhesive extends from the upper surface of the light-emitting element to a lower surface of the second light-transmissive member, the adhesive covers a side surface of the first light-transmissive member, and the adhesive is separated from the substrate.

An optical element includes a light guide is provided with a incidence section and a emission section, a semitransmissive reflective film is provided in the inside of the light guide, a first diffraction element is provided in the incidence section, and is provided with a plurality of gratings, a second diffraction element is provided in the emission section, and is provided with a plurality of gratings, and a reflective film is provided in the incidence section in a periphery of the first diffraction element, in which the pitch of the plurality of gratings of the first diffraction element is equivalent to the pitch of the plurality of gratings of the second diffraction element, and each extension direction of the plurality of gratings of the first diffraction element is the same direction as each extension direction of the plurality of gratings of the second diffraction element.

The present invention aims at providing an antistatic optical film having excellent antistatic effect and high light transmittance, wherein an antistatic layer laminated on at least one side of the optical film. An antistatic optical film having an antistatic layer laminated on at least one side of the optical film, wherein rubbing treatment is performed on a surface of the optical film on which the antistatic layer is laminated, and a conductive polymer in the antistatic layer is aligned.

A method for passivating the cavity surface of an F-P cavity semiconductor laser, comprising the following steps: 1, cleaving the F-P cavity semiconductor laser to obtain a laser bar; 2, cleaning the front and rear cavity surfaces of the laser bar with nitrogen plasma; 3, applying epitaxy Growth technology epitaxially grows a layer of protective film on the front and rear cavity surfaces of the laser; 4. Evaporate or deposit an anti-reflection film on the front cavity surface of the laser bar, and evaporate or deposit a high-reflection film on the rear cavity surface; 5. Use segmentation or solution A reasonable approach divides the laser bar into individual laser chips or chip arrays. The invention can effectively reduce the dangling bonds and surface states at the laser cavity surface, and suppress the light absorption of the laser cavity surface; at the same time, the epitaxially grown thin film is a wide bandgap material, which absorbs very little outgoing light, and can greatly suppress the laser cavity The light absorption at the surface and the resulting temperature rise improve the stability and reliability of the laser.

In a top emission type organic EL display device, brightness gradient in a screen is reduced while keeping a screen brightness. A reflection film is formed under a lower electrode and the light from an organic EL layer is emitted through an upper electrode. Light absorption of the upper electrode is larger on the side of a shorter wavelength. When a film thickness of the upper electrode is enlarged in order to reduce the brightness gradient in a screen, the film thicknesses of the upper electrodes for a red pixel and a green pixel are enlarged without enlarging the film thickness of the upper electrode for a blue pixel. This makes it possible to reduce the brightness gradient as well as to suppress the light absorption of the upper electrode.

An object of the present invention is to provide a Group III nitride semiconductor element which comprises a thick AlGaN layer exhibiting high crystallinity and containing no cracks, and which does not include a thick GaN layer (which generally serves as a light-absorbing layer in an ultraviolet LED).

The inventive Group III nitride semiconductor element comprises a substrate; a first nitride semiconductor layer composed of AlN which is provided on the substrate; a second nitride semiconductor layer composed of Al_x1Ga_1-x1N (0≦x1≦0.1) which is provided on the first nitride semiconductor layer; and a third nitride semiconductor layer composed of Al_x2Ga_1-x2N (0<x2<1 and x1+0.02≦x2) which is provided on the second nitride semiconductor layer.

Disclosed is a key sheet efficiently diffusing local heat generated by a device mounted on a board. A key sheet has a base sheet formed of a rubber-like elastic material in which a heat conductive filler is mixed. Thus, if a semiconductor device on a board generates heat, it is possible to suppress local heat storage by the heat conductive filler of the base sheet. Further, there is no need to provide a separate member for heat diffusion between the board and the key sheet, making it possible to realize a reduction in thickness. Thus, with the key sheet, it is possible to meet the requirement for heat diffusion to eliminate local heat storage in electronic apparatuses, and the requirement for a reduction in the thickness and weight of electronic apparatuses.

A method for forming an electrode for Group-III nitride compound semiconductor light-emitting devices includes a step of forming a first electrode layer having an average thickness of less than 1 nm on a Group-III nitride compound semiconductor layer, the first electrode layer being made of a material having high adhesion to the Group-III nitride compound semiconductor layer or low contact resistance with the Group-III nitride compound semiconductor layer and also includes a step of forming a second electrode layer made of a highly reflective metal material on the first electrode layer.

A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type layer, the first n-type spacer and the second DBR in this order. The heavily doped n-type layer, which is formed so as to cover the p-type spacer layer and the heavily doped p-type mesa, forms the tunnel junction with respect to the heavily doped p-type mesa. Because the height, which is appeared in the surface of the n-type spacer layer, reflects the height of the heavily doped p-type mesa and is comparatively small, the light scattering between the second DBR and the n-type spacer layer is suppressed.

A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.

The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device comprising a first transparent electrode layer, an electric power generation layer, a second transparent electrode layer and a back electrode layer on a substrate, wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer and the back electrode layer is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm.

Disclosed is a light-emitting device (100) has a light-emitting layer portion (24) which is composed of a group III-V compound semiconductor and a transparent thick-film semiconductor layer (90) with a thickness of not less than 40 μm which is formed on at least one major surface side of the light-emitting layer portion (24) and composed of a group III-V compound semiconductor having a band gap energy larger than the photon energy equivalent of the peak wavelength of emission flux from the light-emitting layer portion (24). The transparent thick-film semiconductor layer (90) has a lateral surface portion (90S) which is a chemically etched surface. The dopant concentration of the transparent thick-film semiconductor layer (90) is not less than 5×10¹⁶/cm³ and not more than 2×10¹⁸/cm³. The light-emitting device can have a transparent thick-film semiconductor layer while being significantly improved in light taking-out efficiency from the lateral surface portion.

A self-light-emitting type organic electroluminescence device which makes it possible to restrain to the utmost the absorption of light in an electrode layer, to efficiently take out the light and thereby to obtain sufficient luminance efficiency and the like, in the case of emitting the light through the electrode layer. In an organic electroluminescence device comprising a light-emitting layer ( 3 ) comprised of an organic material based the light-emitting layer ( 3 ) being sandwiched between a first electrode ( 2 ) and a second electrode ( 4 ), and light emitted from the light-emitting layer ( 3 ) being taken out to at least one of the side of the first electrode ( 2 ) and the side of the second electrode ( 4 ), the light absorbance of the electrode or electrodes on the side of taking out the light, of the first electrode ( 2 ) and the second electrode ( 4 ), is not more than 10%.

The invention provides thin film solar cells and preparation methods thereof. The thin film solar cell includes a transparent electrode, an electron transfer layer, a perovskite light absorbing layer,a hole transport layer, and a metal electrode which are sequentially are arranged in a laminated manner, wherein the transparent electrode is provided with multiple grooves disposed at intervals. Through arrangement of the grooves in the battery, light absorption of the transparent electrode can be inhibited, and at the same time, obvious resistive loss can not be produced, thereby being capableof improving the utilization rate of sunlight, and the energy conversion efficiency of the battery is improved.

Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges from 0.01:1.0 to 0.8:1.0.