24 results about "Resistive loss" patented technology

The invention discloses an electromagnetic wave absorbing material CoFe2O4 / ZnO-RGO with a ternary heterostructure as well as a preparation method and application of the electromagnetic wave absorbing material CoFe2O4 / ZnO-RGO, and belongs to the technical field of electromagnetic wave absorption. According to the material, a novel heterostructure with a multi-scale interface and a three-dimensional conductive network is constructed by compounding magnetic loss type CoFe2O4, dielectric loss type ZnO nanorods and resistance loss type RGO. Wherein the ZnO nanorod not only serves as a dielectric loss body, but also effectively enhances the structural anisotropy and the interface polarization effect of the material, and cooperates with the magnetic loss of CoFe2O4 and the resistance loss of RGO to jointly optimize impedance matching and improve the electromagnetic attenuation capability, so that the material shows excellent wave-absorbing performance under various thickness and even ultrathin conditions. The material source is wide, the cost is low, the preparation process is green, simple and convenient, the material is suitable for large-scale production, and an effective material solution is provided for electromagnetic wave absorption application in the national defense and civil fields.

A wafer structure is disclosed comprising a top silicon layer with a polished surface, an oxide layer selectively removed in defined regions, and a bottom silicon layer. Selective oxide removal improves dicing, prevents small molecule ingress, and enhances MEMS device release and performance. The invention addresses challenges of conventional silicon-on-insulator (SOI) wafers, including jagged edges, particle generation during stealth dicing, slow and uncontrolled under-etch rates, and high resistive losses in radio frequency (RF) applications due to parasitic surface conduction. Patterning the oxide layer enables precise MEMS structure release, reduces die size, and improves RF isolation. The wafer structure is suitable for high-speed electronics, RF analog circuits, and MEMS devices such as resonators, accelerometers, and waveguides, offering improved manufacturability and device reliability.

The invention discloses a wide bandgap semiconductor device, which can be used in the field of semiconductors, and comprises a P-type column region, an N-type column region, a P-type buried layer, a P-type connecting layer, a grid electrode and a source electrode, wherein the P-type column regions and the N-type column regions are alternately arranged along a first direction; the P-type column region, the P-type buried layer, the P-type connecting layer and the source electrode are arranged along a second direction, and the P-type connecting layer is in contact with the source electrode; the first direction is perpendicular to the second direction; the N-type column region, the grid electrode and the source electrode are arranged along a second direction; the P-type buried layers and the P-type connecting layers are discontinuously distributed in a third direction, any P-type buried layer is electrically connected with at least one P-type connecting layer in a three-dimensional space, and any P-type column region is electrically connected with at least one P-type buried layer in the three-dimensional space; the third direction is perpendicular to the first direction and the second direction. Therefore, an electrical connection path of the P-type column region, the P-type buried layer, the P-type connection layer and the source electrode is constructed, and the dynamic resistance loss of the device is effectively reduced.

A broadband low-loss waveguide coaxial converter comprises a waveguide lower cavity, a waveguide groove is formed in the middle of the upper surface of the waveguide lower cavity and extends to one side in the waveguide transmission direction, a metal tuning column is arranged at the inner bottom of the waveguide groove, a metal shielding unit is arranged on the periphery of the waveguide groove, and a supporting boss is arranged on the periphery of the metal shielding unit. The bottom surface of the waveguide groove is lower than the upper end of the metal tuning column, the metal shielding unit and the upper surface of the supporting boss; the waveguide upper cover plate covers the supporting boss and is fixedly connected to the supporting boss, a circular hole is formed in the waveguide upper cover plate, a coaxial interface matched with the inner diameter structure of the circular hole is coaxially formed in the circular hole, and an air circular cavity is formed in the lower portion in the circular hole. The waveguide cavity adopts upper and lower split processing, the waveguide lower cavity is not in direct contact with the metal surface of the waveguide upper cover plate, and the metal shielding columns are arranged on the two sides of the waveguide groove of the waveguide lower cavity to realize normal electromagnetic signal transmission without leakage, so that resistive loss caused by metal surface contact is avoided, and insertion loss is effectively reduced.

The utility model relates to the technical field of keyboards, in particular to a composite device for keyboard contacts, which comprises a contact base body and a keyboard, alloy materials are inlaid on a contact working face at the top of the contact base body and are copper-based alloy, an installation groove is arranged on the upper surface of the keyboard, and the installation groove is provided with a through hole. Clamping grooves are formed in the front and rear groove walls of the mounting groove; an integrally-formed contact surface layer is arranged on the alloy material, the contact surface layer is conical, the longitudinal section of the contact surface layer is in an isosceles trapezoid shape, the contact surface layer and the alloy material are integrally formed, and arc-shaped elastic pieces used for being clamped into the clamping grooves are arranged on the front surface and the rear surface of the contact base body. The side wall of the contact base body is provided with an integrally formed positioning mark. According to the keyboard contact compounding device, high-conductivity materials are inlaid in the working face, resistance loss is reduced, sensitivity is improved, a wear-resistant process is adopted, the service cycle is prolonged, materials are inlaid in the key face, the using amount of precious metal is reduced, and cost is reduced.

The application discloses a kind of HVDC valve voltage-sharing resistor selection design method, equipment and medium, with the following beneficial effects: the application establishes the static charging simulation model of converter valve, further based on the static charging simulation model of converter valve is carried out static charging voltage imbalance degree simulation, discharge time simulation, in addition, the application also calculates the loss of voltage-sharing resistor of different resistance value under the rated operating condition of converter valve, and the heat output and operating temperature simulation of voltage-sharing resistor under the extreme severe condition of converter valve;Through the above mode, the application considers the selection of voltage-sharing resistor parameter from the voltage-sharing effect of converter valve, operating loss, discharge time, the operating power and temperature of voltage-sharing resistor and so on, and preferably realizes voltage-sharing and reduces loss, and the stable and safe operation of voltage-sharing resistor.

The utility model belongs to the technical field of photovoltaic cell assemblies, and provides a heterojunction main-grid-free cell assembly, which comprises a protective frame, and a sealing mechanism is assembled at the top of the protective frame; the battery mechanism is mounted in the protective frame; the battery mechanism comprises a crystalline silicon substrate located in the protective frame, and intrinsic amorphous silicon layers are installed on the front face and the back face of the crystalline silicon substrate. A P-type amorphous silicon layer is assembled on the intrinsic amorphous silicon layer on the front face of the crystalline silicon substrate, and an N-type amorphous silicon layer is installed on the intrinsic amorphous silicon layer on the back face of the crystalline silicon substrate. The light receiving area of the cell mechanism is increased through a main-grid-free electrode mechanism, meanwhile, the thin grid lines are of a variable cross-section structure, the cross section of the part, close to the edge of a cell piece, of the thin grid lines is gradually increased, resistance loss in the current transmission process is reduced, the current collection efficiency is improved, and the photoelectric conversion efficiency is improved by combining the efficient photoelectric conversion performance of a heterojunction structure. And the power generation efficiency of the device is obviously improved.

The application discloses a loss evaluation method for a no-loop-flow air-core reactor, and belongs to the technical field of reactor design. The no-loop-flow air-core reactor comprises a reactor coil which is wound by N aluminum flat wires. The aluminum flat wires are independently wound on each star frame arm. Each aluminum flat wire is wound by only N / 1 circle to enter the next circle. The N aluminum flat wires are wound according to the number of the amplitude aluminum flat wires which are wound by each package in a single-layer structure, and then the N aluminum flat wires continue to wind the next layer structure along the reverse direction after the single-layer structure is completed, until the whole reactor coil is wound. Since the equal wire length principle is adopted when the reactor is wound, there is no loop-flow loss in the reactor. The total loss of the reactor is the sum of the resistance loss and the eddy current loss. When the loss calibration of the reactor is performed, the accurate theoretical calculation of the internal magnetic field loss of the new series no-loop-flow reactor is realized, and the influence of the actual loss detection of the reactor caused by the additional loss of the external environment during the actual test is corrected.

The invention belongs to the field of carbon fiber composite materials, and discloses a lightweight superconductive carbon fiber composite cable and a preparation method thereof, the cable is composed of a carbon fiber bundle layer, a multifunctional composite coating, a superconductive functional layer, an insulating layer, a shielding layer and a protective layer in sequence; the multifunctional composite coating is prepared from 60 to 65 parts of a polyamide acid precursor, 8 to 12 parts of 4-aminopropyltrimethoxysilane, 1 to 2 parts of glutaraldehyde, 3 to 5 parts of graphene nanosheets and 15 to 20 parts of a YBaCuOx precursor; a YBaCuOx ceramic layer with oriented crystals and continuous micro-channel cooling is obtained on the surface of the composite coating in situ by the superconductive functional layer through a pre-sintering, calcining and annealing cycle process combining sol-gel deposition and supercritical COdrying; the prepared cable has the advantages of high critical current density, zero resistance loss, excellent thermal-mechanical stability and extremely low self weight, and is suitable for the fields of high-frequency and long-distance lossless power transmission and low-temperature magnetic resonance.

The invention belongs to the technical field of crystalline silicon Topcon multi-fragmentation high-efficiency photovoltaic cell preparation, and particularly relates to a crystalline silicon Topcon multi-fragmentation high-efficiency photovoltaic cell and a preparation method thereof, and the cell is a 4, 5 or 6 equally-divided small cell obtained by carrying out laser cutting and edge passivation on a whole Topcon cell with a specific multi-fragmentation pattern layout. The production method mainly comprises the following steps: after multi-fragment pattern printing, cutting the whole cell into a plurality of small pieces by laser, and carrying out atomic layer deposition aluminum oxide passivation treatment on exposed edges generated by cutting. According to the invention, the series resistance loss of the module is reduced through the multi-fragment design, and the cutting damage is effectively repaired and the carrier recombination is inhibited by combining an innovative cell end edge passivation process, so that the output power of the module is remarkably improved on the premise that the size of the module is not changed.

According to the light superconductive carbon fiber composite cable and the preparation method thereof provided by the invention, the problem of resistance loss caused by grain boundary scattering in a graphene cable is solved by combining a graphene grain boundary repairing technology of a metal state on the surface of a topological insulator. The preparation method comprises the following steps: directionally depositing Bi2Se3 nanosheets on a graphene crystal boundary by using argon current carrying under the condition of 450-550 DEG C through a chemical vapor deposition process to form a continuous conductive channel. According to the method, complex lattice matching is not needed, the strict requirement of double-layer graphene on the magic angle precision is avoided, and the process error-tolerant rate is high. The surface metal state of the topological insulator improves the conductivity of the graphene by 20%-30%, and meanwhile, a dissipation-free topological edge state is reserved. The technology is combined with the light superconductive carbon fiber composite cable, so that the conductivity and mechanical stability of the cable are remarkably improved, and the light superconductive carbon fiber composite cable has a wide application prospect.

This utility model discloses a low-smoke halogen-free flat cable resistant to high temperature and humidity aging, relating to the field of cable technology. It includes a conductor layer, an insulation layer, a filler layer, an inner sheath layer, a shielding layer, a tensile reinforcement layer, an outer sheath layer, and a moisture-proof layer. Through a multi-layered structural design, this utility model forms a complete protective system, effectively improving the cable's resistance to high temperature and humidity aging. The conductor layer uses multi-strand copper wires tightly twisted together, improving the conductor's conductivity and mechanical strength, reducing the skin effect, and lowering resistance loss. The insulation layer is made of low-smoke halogen-free, high-temperature resistant insulating material, covering the outside of the conductor layer. It not only has excellent insulation performance but also maintains stable physical and chemical properties under high-temperature environments, preventing softening and deformation. Furthermore, it produces low smoke and halogen-free combustion, making it environmentally friendly and safe. The filler layer is located in a groove outside the insulation layer, filling the gaps around the flat conductor layer and improving the cable's overall stability and resistance to deformation.

The invention provides a circuit assembly. The circuit assembly comprises a first semiconductor element, a second semiconductor element and an energy storage element, wherein the first semiconductor element and the second semiconductor element are arranged to be electrically isolated from each other; wherein the first end of the first semiconductor element and the first end of the second semiconductor element are electrically connected to one end of the energy storage element respectively. Since the two semiconductor elements are arranged to be electrically isolated, their respective duty cycles are not or almost not affected, thereby improving overall performance. In addition, the arrangement of the semiconductor element and the energy storage element can help to achieve a more compact circuit design, thereby saving space and improving integration density. Further, such an arrangement of the semiconductor element and the energy storage element can shorten a wiring distance between the semiconductor element and the energy storage element, thereby reducing resistance loss and improving efficiency of the circuit.

The invention relates to a camouflage material and a camouflage net. The camouflage material comprises a base material layer and a functional layer. The functional layer is formed on at least one side surface of the base material layer through a vacuum sputtering process, and the sheet resistance of the functional layer is 100-450 omega / square. A uniform and compact film functional layer is formed on the surface of a base material through vacuum sputtering, and the sheet resistance value is designed in a specified range, so that the sheet resistance value of the functional layer is close to free space wave impedance, thereby realizing good impedance matching and promoting incident radar waves to enter the material to the greatest extent to realize multiple reflection attenuation instead of reflection. And in addition, radar wave energy can be effectively attenuated in combination with a resistance loss mechanism of the material. Compared with traditional processes such as carbon paste coating and the like, accurate and stable control over square resistance can be achieved through vacuum sputtering, the coating is high in adhesive force and uniform in thickness, the consistency and reliability of the wave absorbing performance can be improved, the problem that a traditional camouflage net fails to detect SAR radar is solved, and the camouflage effect of the radar wave band is remarkably improved.

The invention discloses a perovskite solar cell and a preparation method and application thereof, and relates to the technical field of perovskite cells. According to the perovskite solar cell, the sub-cell units and the re-wiring layer are arranged on the two opposite surfaces of the substrate respectively, then electrical connection is achieved through the TGV interconnection unit, an electrical interconnection path of the perovskite solar cell is changed from a traditional two-dimensional plane layout to a three-dimensional vertical layout, shielding of an effective light receiving area is reduced, and the efficiency of the perovskite solar cell is improved. In addition, the TGV interconnection unit is completely wrapped by the glass substrate, a natural airtight packaging channel is formed, and degradation of the perovskite material is effectively delayed. And meanwhile, the material in the TGV through hole is not limited by light transmission, and a high-conductivity metal material can be used, so that the resistance loss of the battery is reduced. According to the structure, series connection, parallel connection or mixed connection among the sub-battery units can be realized through the rewiring layer, and the product is endowed with high design flexibility.

To provide a method of manufacturing an inductor with reduced loss by an electrochemical additive manufacturing (ECAM) process.SOLUTION: The inductor includes a first terminal, a second terminal, and a conductor structure between the first terminal and the second terminal. The ECAM process grows the copper structure only in the active areas 22 between the anode segments 21 in a matrix-like pattern with rows and columns and the bottom of the cathode 20, establishing the monolithic structure of the inductor. Porosity and resistive losses are reduced, allowing for improved reliability and energy efficiency.SELECTED DRAWING: Figure 6

The utility model discloses a kind of multilayer shielding low-loss transmission line structure, belong to transmission line technical field, its technical scheme main points include transmission line main body, the transmission line main body includes conductor core, the outside of the conductor core is wrapped with insulating layer, the outside of the insulating layer is wrapped with inner shielding layer, the outside of the inner shielding layer is wrapped with buffer layer, double barrier is formed by inner shielding layer and outer shielding layer, respectively for different frequency band electromagnetic interference, both can block external electromagnetic signal invasion, and can prevent internal signal from radiating outward, solve the problem that traditional single layer shielding anti-interference ability is weak, ensure the stability of signal transmission under complex electromagnetic environment, and the material selection of conductor core and insulating layer considers conductivity and insulating property, reduce resistance loss and dielectric loss in signal transmission process, ensure that high-frequency signal maintains good integrity in long distance transmission, avoid distortion or attenuation.

The invention relates to the technical field of power transmission, in particular to a steel core aluminum alloy wire and a preparation method and application thereof. The aluminum alloy disclosed by the invention comprises the following elements in percentage by weight: 0.008 to 0.012 percent of Mg, 0.05 to 0.09 percent of Si, 0.06 to 0.09 percent of Fe, 0.003 to 0.008 percent of Ti, 0.003 to 0.008 percent of B and the balance of Al and inevitable impurities. The lead is put into application after the steps of smelting, burdening, refining, casting, rolling, quenching, wire drawing, aging and stranding, the electric conductivity, comprehensive mechanical property and operation safety of a common LHA1 aluminum alloy stranded wire can be effectively improved, and the LHA1 aluminum alloy stranded wire is a new product developed according to market requirements. When the aluminum alloy molded wire conductor is put into application, the overall resistance of the aluminum alloy molded wire conductor is lower than that of an existing aluminum alloy stranded wire, the resistance loss during wire operation can be reduced to a certain extent, and energy conservation and emission reduction are facilitated.

The invention discloses a dry-type air-core reactor process deviation detection parameter solving method, relates to the technical field of electrical equipment quality detection, solves the technical problems that a measurement frequency range cannot be determined and electrical parameters corresponding to resistance loss cannot be obtained in an existing process deviation detection technology, and comprises the following steps: S1, determining a test frequency range for process deviation detection; s2, measuring a total loss angle tangent value of the dry-type air-core reactor under different frequencies within the test frequency range, and obtaining a resistance loss angle tangent value based on frequency characteristics of the total loss angle tangent value; and S3, based on the resistance loss angle tangent value, carrying out quantitative grading on the process deviation degree of the electric reactor. The method has a good application prospect in the field of manufacturing quality detection and safety evaluation of key electrical equipment of a power system.

The application discloses a three-dimensional angle-insensitive polarization conversion metasurface, which comprises a dielectric substrate, a metal patch, a lumped resistor, a trapezoidal metal patch in the vertical direction, an air layer, a rectangular metal patch in the vertical direction and a metal ground plate. The application adopts a three-dimensional structure, introduces the trapezoidal metal patch and the rectangular metal patch in the vertical direction, and can receive incident electromagnetic waves in a larger pitch angle range, so that the PCM structure is not sensitive to the incident angle. The lumped resistor is loaded on the PCM unit structure, that is, the resistance loss is added, so that the incident electromagnetic wave energy is absorbed, the radar cross section (RCS) reduction of the absorption and abnormal reflection double mechanism is realized, and the RCS reduction capability of the PCM structure is enhanced. The application has the characteristics of simple structure and practicality, realizes that the PCM unit structure is not sensitive to the incident angle, and after the PCM unit is arrayed, the RCS reduction can reach more than 10 dB in the range of 0°-45° of the incident angle.

The embodiment of the application relates to the field of cable manufacturing, in particular to a high-strength high-voltage cable and a manufacturing method thereof, which comprises a steel core layer, a conductor layer, an inner semiconductive shielding layer, an insulation layer, an outer semiconductive shielding layer and a sheath layer arranged in sequence from inside to outside; the conductor layer is a layered split conductor, comprising an inner layer conductor and an outer layer conductor coaxially sleeved on the outer side of the inner layer conductor; the inner layer conductor comprises a plurality of first strands twisted around the steel core layer, and the first strands are tightly formed by copper single wires; the outer layer conductor comprises a plurality of second strands twisted on the outer side of the inner layer conductor, and the second strands are twisted by insulated copper single wires. The steel core is used as a framework to bear the cable tension; the double-layer strands of the inner layer bare copper and the outer layer enameled copper are used around the steel core to form the layered split conductor, thereby solving the problems of ultrahigh mechanical strength and low AC resistance loss under high-fall laying.

The invention provides a rare earth microalloy semi-hard flat copper coil and a preparation method and application thereof, and belongs to the technical field of lead frame materials. The rare earth microalloy semi-hard flat copper coil comprises the following elements in percentage by mass: 0.05% of La, 0.01% of Zr, 0.04% of Y, 0.02% of Te, 0.005% of Ag and the balance of copper and inevitable impurities. Under the working condition of a high-frequency transformer of a charging pile, the resistance loss (copper loss) of the coil is obviously increased due to a skin effect and a proximity effect, so that the material mainly solves the problems of ensuring the ultrahigh conductivity, improving the mechanical strength, avoiding the stress deformation of the winding and improving the short-circuit resistance of the winding coil. By controlling the component proportion of the rare earth microalloy semi-hard flat copper coil, improving the conductivity and considering the yield strength and elongation performance, the high-strength and high-conductivity characteristics of the winding wire are achieved, and the performance index of the high-power charging pile high-frequency transformer flat copper coil is met.

A wireless power transmission device and a control method thereof solve a heating problem caused in high-power wireless power transmission and provide miniaturization and weight reduction of a device. A relative phase difference of a current applied to each coil is actively controlled on the basis of a spatial relationship (spatial orthogonality or non-orthogonality) of multiple coils. A phase difference is applied to coils having spatial orthogonality so that magnetic field distribution of the magnetic body becomes uniform and hotspots are thus suppressed, and a current of the same phase is applied to coils having no spatial orthogonality so that the current is distributed and the resistive loss of the coil itself is thus reduced. In addition, through a structure in which different coils are arranged on the same plane or the shape and material of the magnetic body are optimized, the thickness and weight of the device are reduced and performance stability is increased. As a result, heat reduction, miniaturization, weight reduction, cost reduction, and performance improvement can be simultaneously achieved in the field such as an electric vehicle charger requiring high output.