A cleaning method capable of
processing at room temperatures without conducting heating, uses little chemicals and water, and does not require special devices or materials. The
chemical cleaning processes and rinse processes employ pure water or
ultrapure water in a
semiconductor wet cleaning process,
rinse water or chemicals which suppresses formation of
surface oxide films, removes particles and prevent their redeposition, and aids in the
hydrogen termination of the
silicon atoms. The cleaning method of the resent invention includes cleaning which is conducted using pure water containing
ozone, cleaning conducted using a cleaning liquid containing HF, H2O, and surfactant, while applying vibration having a frequency of 500 kHz or more, cleaning conducted using pure water containing
ozone, cleaning conducted using a cleaning liquid containing HF and H2O in order to remove
oxide films, and cleaning which is conducted using pure water. After cleaning a material to be cleaned using chemicals, rinsing is conducted using pure water or
ultrapure water containing
hydrogen gas in an amount of 0.5 ppm or more and containing
oxygen gas in an amount of 100 ppb or less.