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Laterally diffused metal oxide semiconductor (LDMOS) transistor and formation method thereof

A transistor and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of complex process and large area of ​​LDMOS transistors, and achieve the effect of increasing difficulty, large safe working range and reducing internal consumption.

Inactive Publication Date: 2013-05-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, the LDMOS transistor with the above-mentioned structure occupies a large area and the process is complicated.

Method used

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  • Laterally diffused metal oxide semiconductor (LDMOS) transistor and formation method thereof
  • Laterally diffused metal oxide semiconductor (LDMOS) transistor and formation method thereof
  • Laterally diffused metal oxide semiconductor (LDMOS) transistor and formation method thereof

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Embodiment 1

[0056] In this embodiment, an N-type LDMOS transistor is formed as an example (that is, the first conductivity type is P-type, and the second conductivity type is N-type), and the method for forming the LDMOS transistor of the present invention is described.

[0057] refer to image 3 Firstly, a semiconductor substrate 201 is provided, and a P-type well region 203 is formed in the semiconductor substrate 201; then, a P-type heavily doped region 205 is formed in the well region 203, and a P-type heavily doped region 205 is formed in the heavily An N-type drift region 207 is formed in the well region 203 on both sides of the doped region 205; then, a shallow trench isolation structure 215 is formed in the drift region 207, and the shallow trench isolation structure 215 is located close to the heavily doped In the drift region 207 on one side of the region 205; then, a gate structure 217 is formed on the semiconductor substrate 201, and the gate structure 217 covers part of the h...

Embodiment 2

[0109] This embodiment takes forming a P-type LDMOS transistor as an example (that is, the first conductivity type is N-type, and the second conductivity type is P-type) to describe the method for forming the LDMOS transistor of the present invention.

[0110] refer to Figure 14 Firstly, a semiconductor substrate 301 is provided, and an N-type well region 303 is formed in the semiconductor substrate 301; then, an N-type heavily doped region 305 is formed in the well region 303, and an N-type well region 305 is formed in the heavily doped region 303; A P-type drift region 307 is formed in the well region 303 on both sides of the doped region 305; then, a shallow trench isolation structure 315 is formed in the drift region 307, and the shallow trench isolation structure 315 is located close to the heavily doped In the drift region 307 on one side of the region 305; then, a gate structure 307 is formed on the semiconductor substrate 301, and the gate structure 307 covers part of...

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Abstract

The invention discloses a laterally diffused metal oxide semiconductor (LDMOS) transistor and a formation method thereof. The formation method for the LDMOS transistor comprises the following steps of: providing a semiconductor substrate, and forming a well region of a first conduction type in the semiconductor substrate; forming a heavily doped region of the first conduction type in the well region, and forming drift regions of a second conduction type in the well region at both sides of the heavily doped region; respectively forming drain regions of the second conduction type in the drift regions; forming a separator of the first conduction type in the heavily doped region, and forming source regions of the second conduction type in the heavily doped region at both sides of the separator; and forming metal plugs respectively connected with the source regions on the semiconductor substrate. The LDMOS transistor formed by the invention is wider in safe working range and low in resistance and internal friction under the same area.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LDMOS transistor and a forming method thereof. Background technique [0002] Lateral double diffusion MOS (LDMOS) transistors are widely used in power devices due to their high breakdown voltage and compatibility with complementary metal oxide semiconductor (CMOS) processes. [0003] The source region and the drain region of the traditional MOS transistor are symmetrical with respect to the gate; while the drain region in the LDMOS transistor is farther away from the gate than the source, and there is a long lightly doped region between the drain region and the gate. area, known as the drift zone. When the source and drain of the LDMOS transistor are connected to a high voltage, the drift region is used to withstand a high voltage drop to obtain a high breakdown voltage. [0004] refer to figure 1 , is a schematic diagram of an N-type LDMOS transistor in an existing ...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/7835H01L29/665H01L29/0696H01L29/41725H01L29/0653
Inventor 刘正超
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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