Infrared image sensor and forming method thereof

Abstract

The invention discloses an infrared image sensor and a forming method thereof. The method comprises the steps of providing a substrate with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) control circuit, forming a pixel structure and a plug for electrically connecting the pixel structure with the control circuit on the substrate, also forming a first sacrifice layer between the pixel structure and the substrate, forming a second sacrifice layer with a first opening and covering the second sacrifice layer on the pixel structure, with the first opening being above the plug, forming a supporting layer on the second sacrifice layer on the side wall and the bottom of the first opening, forming a second opening in the supporting layer, removing the first sacrifice layer and the second sacrifice layer through the second opening, forming a covering layer which is a transmission layer for infrared ray after the first sacrifice layer and the second sacrifice layer are removed, covering the covering layer on the supporting layer, packing the first opening and the second opening, forming a third opening between the covering layer and the supporting layer, and forming a sealing layer in the third opening through a physical vapor deposition technology, so as to seal the third opening. The covering technology in the technical scheme is compatible with the traditional semiconductor technology.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an infrared image sensor and a forming method thereof. Background technique [0002] Existing infrared image sensors require a separate packaging process. figure 1 It is a schematic diagram of the existing infrared image sensor package structure, refer to figure 1 , after forming the infrared image sensor 10, the infrared image sensor 10 is placed on the metal base 21, and then a temperature control component (not shown) is set on the infrared image sensor 10; The opening on 21 is closed, and then, after the metal base is evacuated, the metal base is sealed, so as to realize the packaging process of the infrared image sensor. [0003] However, the existing infrared image sensor is formed by a standard semiconductor process, and the above-mentioned packaging process is not compatible with the semiconductor process. [0004] In addition, the existing methods for forming i...

AI Technical Summary

Problems solved by technology

[0003] However, the formation process of the existing infrared image sensor is a standard semiconductor process, and the above-mentioned packaging process is not compatible with the semiconductor process

[0004] In addition, the existing methods for forming infrared image sensors are complicated

Images