198 results about "Infrared image sensors" patented technology

A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide / cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.

An ocular system for detecting ocular abnormalities and conditions creates photorefractive digital images of a patient's retinal reflex. The system includes a computer control system, a two-dimensional array of infrared irradiation sources and a digital infrared image sensor. The amount of light provided by the array of irradiation sources is adjusted by the computer so that ocular signals from the image sensor are within a targeted range. Enhanced, adaptive, photorefraction is used to observe and measure the optical effects of Keratoconus. Multiple near-infrared (NIR) sources are preferably used with the photorefractive configuration to quantitatively characterize the aberrations of the eye. The infrared light is invisible to a patient and makes the procedure more comfortable than current ocular examinations.

A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the visible spectrum, therefore the sensor has both daylight and night vision capabilities. The sensor includes a continuous multi-layer photodiode structure on a many pixel MOS or CMOS readout array where the photodiode structure is chosen to include responses in the near infrared spectral ranges. A preferred embodiment incorporates a microcrystalline copper indium diselenide / cadmium sulfide photodiode structure on a CMOS readout array. An alternate preferred embodiment incorporates a microcrystalline silicon germanium photodiode structure on a CMOS readout array. Each of these embodiments provides night vision with image performance that greatly surpasses the GEN III night vision technology in terms of enhanced sensitivity, pixel size and pixel count. Further advantages of the invention include low electrical bias voltages, low power consumption, compact packaging, and radiation hardness. In special preferred embodiments CMOS stitching technology is used to provide multi-million pixel focal plane array sensors. One embodiments of the invention made without stitching is a two-million pixel sensor. Other preferred embodiments available using stitching techniques include sensors with 250 million (or more) pixels fabricated on a single wafer. A particular application of these very high pixel count sensors is as a focal plane array for a rapid beam steering telescope in a low earth orbit satellite useful for tracking over a 1500-meter wide track with a resolution of 0.3 meter.

The invention discloses a face detection method and a device. The face detection method comprises an infrared image of a target object acquired by an infrared image sensor; a coordinate region of the human body contour of the target object is extracted from the infrared image; based on the coordinate region, a visible light image sensor is controlled to finish a local exposure of the human body contour, so the exposure of at least a part of the area of the human body contour including the facial area is larger than the exposure of the other areas in the image acquisition range; the local exposure and a collection of a locally exposed visible light image of the target object are finished at the same time; the face detection is applied to the visible light image. According to the face detection method, problems such as slowdowns in performance of the face detection and missing detections in the dark environment are solved effectively. The device has similar advantages.

A polarization-sensitive infrared image sensor (also termed a snapshot polarimeter) utilizing a 2-D array of polarizers to filter infrared light from a scene according to polarization, and a 2-D array of photodetectors (i.e. a focal plane array) to detect the filtered infrared light and generate polarization information which can be used to form a polarization-sensitive image of the scene. By forming each polarizer on an optical fiber in a fiber optic faceplate, the polarizers can be located facing a 2-D array of retarders to minimize diffraction effects of the infrared light. The optical fibers also guide the filtered infrared light to the photodetectors to reduce cross-talk in the polarization information. The polarizers can be formed as wire grid polarizers; and the retarders can be formed as subwavelength surface-relief gratings.

A tunable infrared detector is provided that includes a substrate, a bottom wavelength detector formed over the substrate, a top wavelength detector formed over the first wavelength detector layer, and an interferometer filter formed over the top wavelength detector layer and the bottom wavelength detector layer. The interferometer filter is operatively configured to pass a first wavelength associated with a first portion of a predetermined band and a second wavelength associated with a second portion of the predetermined band to the top wavelength detector. The top wavelength detector is operatively configured to detect each wavelength associated with the first portion of the predetermined band and to transmit each wavelength associated with the second portion of the predetermined band to the bottom wavelength detector. The bottom wavelength detector is operatively configured to detect each wavelength associated with the second portion of the predetermined band.

The invention describes a method for the inspection of machining tools used in computational numerical control (CNC) machining centers. The invention will observe a machining tool immediately after use to determine if it has been damaged. The invention is based on a machine vision technology that uses one or more image sensors to acquire, locate and compare the tool to a good model. The inspection equipment is designed for implementation in the CNC automatic tool changing system and will alert the operator that tool has been damaged before the next operation. This immediate response of the invention will contain defect components and prevent damage to subsequent components. With the addition of an infrared image sensor the invention is capable of detecting worn or dull tools that may damage a component due to excessive heating.

At least one forward-biased semiconductor diode having a potential barrier is used as a temperature sensor whose sensitivity can be finely adjusted. An operational amplifier circuit (A1) is used to apply a bias voltage of DC or rectangular waveform to a semiconductor diode (D) having a potential barrier used as a temperature sensor. In view of the fact that the temperature sensitivity of the semiconductor diode (D) depends on the height of its potential barrier, the forward bias voltage applied from a bias circuit (2) directly to the semiconductor diode (D) is finely adjusted to obtain desired temperature sensitivity. The output voltage of the sensor is associated with a current, having an exponential temperature dependence, which flows in the semiconductor diode (D) with the forward bias being fixed.

The invention provides a wild animal monitoring system established based on a wireless image sensor network. The wild animal monitoring system based on the wireless image sensor network comprises a wireless infrared image sensor network, a base station and a wild animal monitoring center, wherein the wireless infrared image sensor network can achieve the automatic collection, compression and transmission of wild animal monitoring images in all weather, the base station is connected with the wireless infrared image sensor network through a 3G network, and the wild animal monitoring center is connected with the base station through an Internet and is provided with a 3D GIS. An image compression algorithm which is based on a compression sensing theory and is suitable for the wireless infrared image sensor network which is limited in processing capability, power source endurance and information channel transmission bandwidth is adopted in the wild animal monitoring system. The wild animal monitoring system based on the wireless image sensor network is the successful application of the wireless image sensor network in the filed of wild animal protection monitoring, the wild animal monitoring images can be obtained in all weather, and researching personnel are assisted to remotely master the current state and the dynamic changing of wild animal resources in real time.

Infrared imaging systems and methods disclosed herein, in accordance with one or more embodiments, provide for an infrared camera system comprising a protective enclosure and an infrared image sensor adapted to capture and provide infrared images of areas of a structure. The infrared camera system includes a processing component adapted to receive the infrared images of the areas of the structure from the infrared image sensor, process the infrared images of the areas of the structure by generating thermal information, and store the thermal information in a memory component for analysis.

The invention discloses an infrared image sensor and a forming method thereof. The method comprises the steps of providing a substrate with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) control circuit, forming a pixel structure and a plug for electrically connecting the pixel structure with the control circuit on the substrate, also forming a first sacrifice layer between the pixel structure and the substrate, forming a second sacrifice layer with a first opening and covering the second sacrifice layer on the pixel structure, with the first opening being above the plug, forming a supporting layer on the second sacrifice layer on the side wall and the bottom of the first opening, forming a second opening in the supporting layer, removing the first sacrifice layer and the second sacrifice layer through the second opening, forming a covering layer which is a transmission layer for infrared ray after the first sacrifice layer and the second sacrifice layer are removed, covering the covering layer on the supporting layer, packing the first opening and the second opening, forming a third opening between the covering layer and the supporting layer, and forming a sealing layer in the third opening through a physical vapor deposition technology, so as to seal the third opening. The covering technology in the technical scheme is compatible with the traditional semiconductor technology.

An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.

The invention relates to a multi-touch positioning method and a multi-touch screen. The multi-touch positioning method comprises the following steps: a first infrared generator arranged at a first corner of a display panel transmits infrared rays in first wavelength and a second infrared generator arranged at a second corner transmits infrared rays in second wavelength; a first infrared image sensor arranged at the opposite corner of the first corner receives the infrared rays in first wavelength and generates the first infrared image, and a second infrared image sensor arranged at the opposite corner of the second corner receives the infrared rays in second wavelength and generates the second infrared image; and the first infrared image and the second infrared image are processed to determine at least a touch point. The invention adopts the infrared generators arranged at the corners of the display panel and corresponding infrared image sensors to acquire touch signals, thus ensuring the touch screen can simultaneously recognize multiple touch points, and the recognition accuracy of the touch points is high and the method is simple and practicable.

An infrared detector includes at least one infrared absorber provided on a substrate and a plurality of thermocouples. The at least one infrared absorber may include one of a plasmonic resonator and a metamaterial resonator. The plurality of thermocouples may be configured to generate electromotive forces in response to thermal energy generated by the at least one infrared absorber.

The invention relates to the technical field of data identification, in particular to a non-uniformity correction method for gas leakage detection. The non-uniformity correction method comprises the following steps: a gas leakage detection device acquires a gain coefficient Gij and a bias coefficient Qij of each temperature section and stores acquired infrared images; gas areas in the infrared images are identified through texture and edge features; the temperature of each point of images in non-gas areas is detected, and the areas are divided; non-uniformity correction is performed on images in each sub-area through a non-uniformity correction unit. The invention further provides the gas leakage detection device. The gas leakage detection device comprises a casing, wherein a main control chip is arranged in the casing and connected with an infrared imaging module, a display module and a power module, the power module supplies power to the other modules, and the infrared imaging module comprises an infrared lens, an infrared window and an infrared image sensor which are arranged sequentially. The non-uniformity correction method for gas leakage detection and the gas leakage detection device can improve the gas non-uniformity correction effect and improve the gas leakage detection precision.

An infrared image sensor comprises, a substrate having an image area on which infrared radiation is made incident and an non-image area out of the image area, plural first heat-sensitive parts arranged in rows and columns on the image area, plural second heat-sensitive parts provided in the non-image area so as to correspond to the respective rows of the first heat-sensitive parts in the image area with the same thermoelectric conversion function as that of the first heat-sensitive parts, a bias current supply circuit supplying a bias current to the first heat-sensitive parts and second heat-sensitive parts, an output circuit outputting an electric signal of the first heat-sensitive parts, and a bias current control circuit controlling the bias current to be fed to the first heat-sensitive parts, according to an electric signal of the second heat-sensitive parts.

The invention discloses a single channel visible light and infrared image collecting, fusing and monitoring system. The single channel visible light and infrared image collecting, fusing and monitoring system comprises a double-waveband front end optical lens, an optical splitter, a visible image sensor and an infrared image sensor; the double-waveband front end optical lens is arranged at the front end of a single channel, the optical splitter is arranged behind the double-waveband front end optical lens and is used for dividing light into two beams, one light beam is a transmission infrared light beam and received by the infrared image sensor, the other light beam is a reflective visible light beam and received by the visible image sensor, the visible light received by the visible image sensor is transmitted out through a communication transmission circuit after being collected and processed, and the infrared light received by the infrared image sensor is transmitted out through the communication transmission circuit after being collected and processed. High-accuracy real-time fusion of single-channel double-spectrum images can be achieved.

The present invention discloses a non-refrigeration array type infrared image sensor and belongs to the technical field of infrared image sensor preparation. The sensor comprises a tubular infrared image sensor structure which is vacuum-encapsulated. The tubular infrared image sensor structure comprises a sensor chip, a tube cap and a tube socket. The sensor chip is adhibited on the tube socket. The tube cap and tube socket are integrated through vacuum-encapsulation. The pressure welding wire of sensor chip is leaded-out through the wire lead of tube socket. The tube socket adopts metal material. A semiconductor chilling plate is fixedly connected below the tube socket. The semiconductor chilling plate is inserted in the electrode leading-out printed circuit board which is permanently connected with the tube socket. An insulation film is provided at the joint. The lead wire on the tube socket is connected with the electrode leading-out printed circuit board. The invention uses the semiconductor chilling plate as a cold source and can guarantee the quick dissipation of infrared energy absorbed by the infrared image sensor. The sensitivity of non-refrigeration array type infrared image sensor is increased.

The invention discloses a depth data detecting device. An infrared coding projection system projects an infrared light beam provided with texture in order to form randomly-distributed infrared texture on an object to be detected. Two infrared image sensors generate images to form two infrared texture images. On the basis of a positional difference of texture fragment images correspondingly formed in the two infrared texture images by the same texture fragment in the infrared texture, the depth data, relative to the two infrared image sensors, of the infrared texture is determined. The infrared coding projection system comprises at least two infrared light generators, an optical system, and a controller. The at least two infrared light generators are used for generating infrared light. The infrared light generated by the infrared light generators forms an infrared light beam provided with texture after passing the optical system. The controller is used for controlling and switching the at least two infrared light generators in order that the at least two infrared light generators generate infrared light alternately. The infrared light generators operate alternately so that the service lives of the infrared light generators are prolonged.

The invention discloses an uncooled infrared image sensor chip, which belongs to the technical field of the preparation of infrared image sensor. The uncooled infrared image sensor chip comprises a sensor substrate, the sensor substrate is integrated with a plurality of infrared-sensitive pixel unit arrays, each infrared-sensitive pixel unit comprises a group of elastic suspension beams and an infrared-sensitive resonator, the elastic suspension beams are fixed on the sensor substrate through an anchor point, the infrared-sensitive resonator is connected with the elastic suspension beams and consists of a resonant diaphragm and an excitation electrode, and the resonant diaphragm is locally superposed with an infrared-sensitive material layer with the thermal expansion coefficient different from that of the resonant diaphragm. The infrared-sensitive pixel units of the uncooled infrared image sensor chip adopt the infrared-sensitive resonators, have a simple process, are easy to obtain a higher rate of finished products, and realize the manufacturing of an array type uncooled infrared image sensor on a chip.

The invention discloses a fusion system for infrared images and low-illumination images. The fusion system comprises a low-illumination optical lens group, an infrared optical lens group, a synchronous focus control device, a low-illumination image sensor, an infrared image sensor, a low-illumination image sensor driving module, an infrared image sensor driving module, an image sensor simulation front end, a low-illumination image signal processor, an infrared image signal processor, a synchronous signal generator, a synchronous image collection module, a digital image processing module, an image display control module, a microdisplay, a display magnifying lens group, a power supply module, a processor peripheral circuit and a display switching key. According to the fusion system, two-way synchronous focus control of an infrared and low-illumination video is realized optically, and complexity of a back-end registration algorithm is reduced; with the adoption of an embedded type multicore heterogeneous processor, performance of image collection control and real-time algorithm treatment is guaranteed; three-type display switching of infrared, low-illumination and pseudo-color fusion video can be realized.

An exemplary touch display system includes a flexible touch screen, a prism, an infrared light source, an infrared image sensor, and a processor. The prism is substantially isosceles right-angled triangular shaped, with a first side surface thereof being disposed adjacent to but spaced apart from back surface of the touch screen by air, wherein when a touch is applied to the touch display surface at a touch position, the touch screen is bent at the touch position and contact the prism at a contact position corresponding to the touch position. The infrared light source and the infrared image sensor are arranged adjacent to and facing to a hypotenuse surface of the prism. The processor is configured for processing image signals from the image sensor and obtaining the contact position based on light intensities of the image signals, thereby obtaining the touch position on the touch display surface.

An infrared-detecting element includes: a substrate; a laminated body; an anchor coupling a part of the laminated body with the substrate and supporting the laminated body with a gap above the substrate; and an amplifier provided on the substrate and connected to at least one of the lower electrode and the upper electrode. The laminated body has a lower electrode, an upper electrode, and a piezoelectric film made of aluminum nitride which is provided between the lower electrode and the upper electrode and in which a c-axis is oriented almost perpendicularly to a film plane. The amplifier has a circuit performing conversion into voltage according to a charge generated in the laminated body.

The invention relates to a long-distance human face temperature measurement system based on infrared imaging, an implementation method, computer equipment and a storage medium. The system comprises asensor module, a data preprocessing module and an AI algorithm module, wherein the sensor module includes an infrared image sensor and a visible light image sensor which are used for collecting infrared image data and visible light image data; the data preprocessing module is used for carrying out normalization processing and angle correction on the infrared image data and the visible light imagedata acquired by the sensor module and smoothing environmental interference factors in continuous images; and the AI algorithm module includes a face recognition algorithm module based on a CNN modeland a temperature measurement algorithm module based on a DQN reinforcement learning model. Automatic human face recognition, temperature measurement and data display can be achieved within the rangeof 1-3 m, a whole temperature measurement process only needs one second, test precision within + / -0.3 DEG C can be achieved, operation is easy, and an interface is friendly.

An object of the present invention is to provide an infrared camera capable of shading correction with ease and an improved degree of accuracy and has good maintenance ability. To achieve the object, an infrared camera provided with an infrared lens group and an infrared image sensor located at an image focusing surface of the infrared lens group in a housing in which a window is formed at a portion facing the object side of the infrared lens group comprising: a controller correcting a captured image according to an output from the infrared image sensor and outputting the corrected image; a shutter arranged on an infrared light path in the housing from the window to the infrared lens group; and a temperature sensor detecting the temperature of the shutter is adopted.

Disclosed are a silicon-based and quantum dot fully integrated image sensor and a preparation method. Silicon-based pixel units and quantum dot pixel units are integrated on a same silicon substrate, so the silicon-based image sensor can achieve imaging and detection for visible light; and an appropriate quantum dot material and an appropriate quantum dot size are selected, so an infrared high-sensitivity quantum dot thin film can be formed, imaging and detection for an infrared signal are achieved, and a photoelectric signal generated by the quantum dot thin film is controlled and read out on the basis that devices are formed on silicon bases. The quantum dot thin film pixel units and the silicon-based pixel units can achieve reuse of a readout circuit, the area of a chip is saved, and the difficulty of circuit design is reduced; the preparation method of the invention is compatible with CMOS image sensor process, the preparation method is in favor of single-chip manufacture of visible light and infrared image sensors, visible light and infrared detection technology combined wide spectrum detection and imaging technology is achieved, the complex degree of a product is simplified, and product cost is lowered.

A multispectral medical imaging device includes illumination devices arranged to illuminate target tissue. The illumination devices emit light of different near-infrared wavelength bands. The device further includes an objective lens, a near-infrared image sensor positioned to capture image frames reflected from the target tissue, and a visible-light image sensor positioned to capture image frames reflected from the target tissue. A processor is configured to modulate near-infrared light output of the plurality of illumination devices to illuminate the target tissue. The processor is further configured to determine reflectance intensities from the image frames captured by the near-infrared image sensor and to generate a dynamic tissue oxygen saturation map of the target tissue using the reflectance intensities. The device further includes an output device connected to the processor for displaying the dynamic tissue oxygen saturation map.

A CMOS image sensor combining CMOS read-out integrated circuits (ROICs) and photodiode on active pixel (POAP) technology with quantum dot (PbS-CQD) detector material. This approach provides sensors and systems that are easily manufacturable with high yields The approach dramatically lowers the cost per pixel, reduces the pixel size, and increases the pixel count of SWIR sensors and cameras. The PbS-CQD detector material provides optical performance approaching that of InGaAs, and outperforms it in some respects. PbS-CQD detectors include multi-layered conformal thin-films, applied to the ROICs in liquid form. The films are perfectly suited for application over wide surface areas, limited only by wafer or substrate size.