Non-refrigeration infrared image sensor chip and preparation thereof

An image sensor and uncooled infrared technology, which is applied in the field of infrared image sensor preparation, can solve the problems of sensor unit and lead wire temperature rise, reduce the sensitivity of infrared image sensor, etc., and achieve high yield and low difficulty of the process method.

Inactive Publication Date: 2009-05-27
COMMUNICATION UNIVERSITY OF CHINA +1
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  • Abstract
  • Description
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Problems solved by technology

The bias current for sampling the PN junction voltage will increase the temperature of the sensor unit and lead wires, reducing the sensitivity of the infrared image sensor

Method used

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  • Non-refrigeration infrared image sensor chip and preparation thereof
  • Non-refrigeration infrared image sensor chip and preparation thereof
  • Non-refrigeration infrared image sensor chip and preparation thereof

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Embodiment Construction

[0035] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0036] The infrared-sensitive resonator is prepared by micro-electro-mechanical system (MEMS) technology. The infrared-sensitive resonator is composed of two layers of materials with different thermal expansion coefficients (CTE), and the infrared-facing layer is a material with good infrared absorption characteristics. The working principle of the infrared sensitive resonator is that an excitation voltage is applied between the electrodes of the resonator and the bottom electrode during operation, so that the resonator is in a resonant state. When the resonant structure is exposed to infrared radiation, the temperature rises, and the difference in thermal expansion coefficient causes stress on the dual material part on the resonator, that is, the Young's modulus of elasticity [E] changes. Since the resonant frequency [ω] is proportional to the ...

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Abstract

The invention discloses an uncooled infrared image sensor chip, which belongs to the technical field of the preparation of infrared image sensor. The uncooled infrared image sensor chip comprises a sensor substrate, the sensor substrate is integrated with a plurality of infrared-sensitive pixel unit arrays, each infrared-sensitive pixel unit comprises a group of elastic suspension beams and an infrared-sensitive resonator, the elastic suspension beams are fixed on the sensor substrate through an anchor point, the infrared-sensitive resonator is connected with the elastic suspension beams and consists of a resonant diaphragm and an excitation electrode, and the resonant diaphragm is locally superposed with an infrared-sensitive material layer with the thermal expansion coefficient different from that of the resonant diaphragm. The infrared-sensitive pixel units of the uncooled infrared image sensor chip adopt the infrared-sensitive resonators, have a simple process, are easy to obtain a higher rate of finished products, and realize the manufacturing of an array type uncooled infrared image sensor on a chip.

Description

technical field [0001] The invention relates to the preparation technology of an infrared image sensor, in particular to an uncooled infrared image sensor chip and a preparation method thereof. Background technique [0002] Utilizing the characteristic that any object has infrared radiation, through the detection of temperature changes, the detection of infrared can be realized. Furthermore, an infrared imaging system using an infrared image sensor composed of an infrared sensitive unit as a core device can realize infrared imaging of an object. The uncooled infrared focal plane array image sensor is a core device of infrared imaging. Compared with cooled infrared imaging technology, uncooled infrared image sensor has a series of advantages such as volume, power consumption, and cost. But there is still a gap in sensitivity and resolution. [0003] At present, common uncooled infrared focal plane array image sensor chips use infrared sensitive pixel units such as thermal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02G01J5/10B81C1/00
Inventor 张霞张大成
Owner COMMUNICATION UNIVERSITY OF CHINA
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