Silicon-based and quantum dot fully integrated image sensor and preparation method
An image sensor and quantum dot technology, applied in the field of image sensors, can solve the problems of complex optical path and system design, high price, etc., and achieve the effect of saving chip area and reducing difficulty
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[0031] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.
[0032] The absorption of incident light by a silicon-based CMOS image sensor depends on the junction depth of the photodiode. The longer the wavelength, the deeper the required junction depth. Photodiodes sensitive to visible light cannot sense infrared signals at the same time. If you need to be sensitive to infrared, you need to use larger injection energy to form a deeper photodiode. Larger injection energy will cause injection damage, increase dark current, and affect image quality, and the deeper the junction will be, the deeper the charge signal will be. The ...
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