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Method for preparing graphene at normal temperature

A technology of graphene and graphene, which is applied in the field of preparing graphene at room temperature, can solve the problems of semiconductor process incompatibility, environmental pollution, etc., and achieve the effect of overcoming chance, environmental pollution, and high temperature environment

Active Publication Date: 2012-12-26
XIAN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The invention provides a method for preparing graphene at room temperature, so as to overcome the disadvantages of high temperature process, incompatibility with semiconductor process and environmental pollution in the prior art

Method used

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  • Method for preparing graphene at normal temperature
  • Method for preparing graphene at normal temperature
  • Method for preparing graphene at normal temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] (1) Preparation of graphene oxide solution: Take 4mg of graphene oxide, dissolve it in 10ml of deionized water, and undergo ultrasonic dispersion (ultrasonic time 4h, ultrasonic power 100W) to form a uniform aqueous solution of graphene oxide.

[0045] (2) Preparation of graphene oxide film: Substrate 6 is a double-sided polished N-type silicon wafer (110) covered with 400 nanometers of SiO2 after thermal oxidation treatment, and spin-coated graphene oxide 10 times (low speed 500r / min, time 5s , high speed 1000r / min, time 30s), a uniform graphene oxide film 1 is formed on the surface of the silicon substrate, Figure 5 The optical microscope photos of the surface are given (a, bright-field graphene oxide surface morphology under 100 times objective lens, b, dark-field graphene oxide surface morphology under 100 times objective lens), it can be seen that the size is below 100mm flake graphene oxide.

[0046] (3) Reduction to obtain graphene monomer: put the prepared gra...

Embodiment ２

[0048] (1) Preparation of graphene oxide solution: Take 8 mg of graphene oxide, dissolve it in 10 ml of absolute ethanol, and undergo ultrasonic dispersion (ultrasonic time 8 hours, ultrasonic power 50 W) to form a uniform ethanol solution of graphene oxide.

[0049] Preparation of graphene oxide film: substrate 6 is selected through thermal oxidation treatment, and the surface is covered with 400 nanometers of SiO Double-sided polished N-type silicon wafer (110), spin-coated graphene oxide 50 times (low speed 400r / min, time 5s, high speed 1000r / min, time 30s), a uniform graphene oxide film 1 is formed on the surface of the silicon substrate, and the surface of the spin-coated graphene oxide is as follows Figure 7 shown.

[0050] Reduction to obtain graphene monomer: put the prepared graphene oxide into PECVD, flush into H 2 Gas, until the working pressure reaches 67Pa, turn on the RF radio frequency source (power 100W), form a plasma in a vacuum chamber with a vacuum degre...

Embodiment 3

[0052] (1) Preparation of graphene oxide solution: Take 10 mg of graphene oxide, dissolve it in 20 ml of acetone, and undergo ultrasonic dispersion (ultrasonic time 6 h, ultrasonic power 80 W) to form a uniform acetone solution of graphene oxide.

[0053] (2) Preparation of graphene oxide film: take quartz glass as the substrate 6, spin-coat graphene oxide 10 times (low speed 500r / min, time 5s, high speed 1000r / min, time 30s), and form a uniform oxide layer on the surface of the quartz substrate. Graphene film 1, Figure 10 The optical microscope photos of the surface are given (a, bright-field graphene oxide surface morphology under 100 times objective lens, b, dark-field graphene oxide surface morphology under 100 times objective lens), it can be seen that the size is below 100mm flake graphene oxide.

[0054] (3) Reduction to obtain graphene monomer: Put the prepared graphene oxide into the plasma etching (ICP) equipment, pour NH3 gas into it, until the working pressure re...

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Abstract

The invention relates to the technical field of preparation of graphene, in particular to a method for preparing graphene at normal temperature. The method aims to overcome the drawbacks of need of a high-temperature process, incompatibility with a conductor process and environment pollution of the prior art. The invention provides a technical scheme that the method for preparing graphene at normal temperature comprises the following steps in turn: (I) dissolving graphene oxide a solvent to obtain solution of graphene oxide; (II) obtaining a graphene oxide thin film on the surface of a substrate by spinning or lifting process; and (III) reducing graphene oxide by energetic atom / ion / molecule treatment of the graphene oxide thin film in a normal temperature and vacuum environment, and thus,obtaining pure graphene oxide. The method for preparing graphene at normal temperature has the advantages of preparing graphene in room and vacuum environment, obviating the need of high-temperature environment in the conventional preparation of graphene and reducing energy consumption; and the preparation process and the conventional semiconductor process are completely compatible.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a method for preparing graphene at normal temperature. Background technique [0002] In 2004, Geim proved that a two-dimensional crystal material - graphene - can exist alone. This research result has attracted the attention of countless researchers because it is considered to be a next-generation semiconductor material that can replace silicon materials. Therefore, how to prepare graphene with excellent performance and compatibility with current semiconductor technology has become one of the hot spots of research. At present, the preparation methods of graphene have been developed mainly as follows: mechanical exfoliation method, epitaxial generation of graphene on silicon carbide substrate or metal substrate, mechanical and chemical cleavage method of carbon nanotubes, and reduction method of graphene oxide. [0003] Among them: the mechanical exfoliation met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/04B82Y40/00
Inventor 梁海锋蔡长龙刘欢苏俊宏任雯
Owner XIAN TECH UNIV
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