Method for forming semiconductor device
A semiconductor and device technology, applied in the field of semiconductor device formation, can solve the problems of shrinking the size of fin field effect transistors, increasing the difficulty of the fin field effect transistor process, increasing device density, etc., and achieves good appearance and simplified formation method. , size-accurate effect
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[0035] As described in the background art, with the shrinking of process nodes, the size of the fin-type field effect transistor is reduced and the device density is increased, which makes the process of forming the fin-type field effect transistor increasingly difficult.
[0036] After research, it is found that as the process nodes shrink, the space used to form the conductive structure on the surface of the source region, the drain region or the gate layer also shrinks, making the formation of the conductive structure more difficult, and the formed conductive structure The appearance is poor.
[0037] Please refer to figure 1 , figure 1 It is a schematic diagram of the top view structure of a fin-type field effect transistor, including: a substrate (not shown); a number of parallel fins 101 arranged in an array on the surface of the substrate; on the surface of the substrate and covering part of the fin 101 side The dielectric layer 102 of the wall; the gate structure 103 stradd...
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