Manufacturing method of metal oxide semiconductor device

A technology of oxide semiconductor and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components and other directions, can solve problems such as bottlenecks that are prone to occur, and achieve the effect of avoiding gate bottlenecks and simplifying the formation process.

Active Publication Date: 2008-03-12
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under this condition, when phosphoric acid is used to remove the hard mask, the phosphoric acid will simultaneously corrode the polysilicon gate portion doped with phosphorus impurities, resulting in the phenomenon of necking 160 shown in FIG. 3 on

Method used

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  • Manufacturing method of metal oxide semiconductor device
  • Manufacturing method of metal oxide semiconductor device
  • Manufacturing method of metal oxide semiconductor device

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Embodiment Construction

[0031] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0032] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many ways other than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the invention is not limited to the specific implementations disclosed below.

[0033] The method for forming the gate of a semiconductor device provided by the present invention is suitable for the manufacture of the gate of a semiconductor device with a characteristic line width of 65nm or less than 45nm. The semiconductor device is not only a MOS transistor, b...

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Abstract

The invention discloses a manufacturing method for semiconductor device of metal oxide, which comprises: forming dielectric layer on the semiconductor underlay; forming polycrystalline silicon layer on the said dielectric layer; forming hard mask layer on the said polycrystalline silicon layer and patterning it; etching the said polycrystalline silicon layer for the mask layer by the said hard mask layer to form grid; forming the protective layer on the grid surface; etching the said protective layer by etching method; eliminating the said hard mask layer. The invention forms a sidewall protective layer in the said side wall of the grid, which has the function of separating the corrosive liquid from grid, thus to avoid bottleneck.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a metal oxide semiconductor device. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, wafers are developing towards higher component density and high integration. Metal oxide semiconductor devices (MOS) gates are becoming thinner and shorter than before. The manufacturing technology of semiconductor devices has entered the 65nm or even 45nm process node, and the minimum feature size of the gate width has reached 45nm or smaller. [0003] In NMOS and PMOS transistors of complementary metal oxide semiconductor devices (CMOS), the preferred material for making the gate is polysilicon, which has special heat resistance and high etch pattern accuracy. During the process o...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/336
Inventor 张海洋刘乒马擎天
Owner SEMICON MFG INT (SHANGHAI) CORP
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