Production technology of semiconductor grade silicon single crystal

Abstract

The invention discloses a production technology of semiconductor grade silicon single crystal, comprising the following steps: 1, arranging a transverse magnetic field: the magnetic field intensity of the transverse magnetic field is 1300 + / - 100 gausses; 2, preparing silicon material and doping agent; 3, charging; 4, melting material; 5, introducing shoulder and expanding shoulder; 6, rotating shoulder: after the step of expanding shoulder, the step of rotating shoulder is carried out with a casting speed of 3 + / - 0.3 mm / min; and 7, growing at the same diameter: after the step of rotating shoulder, the material grows up to 50 + / - 5 mm with a casting speed of 1.6 + / - 0.1 mm / min; then, a conventional method of growing at the same diameter for direct pulling silicon single crystal is used to complete the subsequent process of growing at the same diameter of the semiconductor grade silicon single crystal. The method has the advantages of reasonable design, simple steps, easiness in realization, easiness in mastering and good using effect, and is capable of effectively guaranteeing the quality of the produced semiconductor grade silicon single crystal. The produced semiconductor grade silicon single crystal has high uniformity of cross-section electric resistivity and no micro-defects such as swirl.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon production, and in particular relates to a semiconductor-grade monocrystalline silicon production process. Background technique [0002] Monocrystalline silicon, also known as monocrystalline silicon, is a semiconductor material. In recent years, with the rapid development of the photovoltaic industry, monocrystalline silicon has been used to make solar cells, showing a situation in which demand exceeds supply. With the development of high technology, it is the common wish of every material manufacturer and device manufacturer to produce nearly perfect high-quality single crystal silicon. This kind of single crystal silicon has good cross-sectional resistivity uniformity, high life, and low carbon content. , Micro-defect density is small, and the oxygen content can be controlled. [0003] At present, the methods for producing single crystal silicon include Czochralski method, zon...

AI Technical Summary

Problems solved by technology

However, the semiconductor-grade monocrystalline silicon currently on the market has various defects and deficiencies such as poor uniformity of cross-sectional resistivity, easy occurrence of swirl defects, and difficult control of product quality.

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