The invention discloses a ferromagnetic
metal / two-dimensional ferromagnetic
semimetal heterojunction-based spin electronic device, which comprises a ferromagnetic
metal electrode and a single-layer two-dimensional ferromagnetic
semimetal material layer, the ferromagnetic
metal is
nickel (Ni) or
cobalt (Co), the two-dimensional ferromagnetic
semimetal is
ferrous halide FeX2, X is Cl, Br or I, and the thickness of the ferromagnetic metal
electrode and the thickness of the two-dimensional ferromagnetic semimetal material layer are smaller than that of the ferromagnetic metal
electrode. The two are in edge contact or top contact to form a
heterojunction, and the
spin injection efficiency close to 100% can be achieved; on the basis of a Ni and
ferrous chloride (FeCl2)
heterojunction structure,
hexagonal boron nitride (h-BN) is introduced as a two-dimensional tunneling
barrier layer, and a Ni / FeCl2 / h-BN / FeCl2 / Ni Van der Waals magnetic
tunnel junction device can be constructed. According to the structure, the
tunneling current of complete
spin polarization is reserved in the parallel
magnetization direction, the transmissivity is remarkably reduced in the anti-parallel
magnetization direction, and the TMR (
Tunnel Magnetoresistance) exceeding 3000% can be realized. Through the heterojunction structure and interface
configuration design, the spin transport is effectively regulated and controlled on the device level, and the device is suitable for a
spin valve, a
spin filter and a low-power-consumption magnetic
tunnel junction memory.