Method for preparing silicon hollow nano-cone array

A nanocone and cone array technology, which is applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of time-consuming, low efficiency, and difficulty in realizing the construction of silicon nanocone arrays, etc.
CN101497429AInactive Publication Date: 2009-08-05JILIN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
JILIN UNIV
Publication Date
2009-08-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a method for preparing a hollow silicon nano conical array, in particular to a method for preparing the hollow silicon nano conical array with large area, uniform bottom diameter length, controllable spacing, controllable period and orderly arrangement. The method comprises the following four steps: washing and surface hydrophilization treatment of a monocrystalline silicon piece, preparation of polystyrene monolayer colloidal crystals, preparation of a hollow silicon nano column array, and construction of a hollow silicon nano conical array. The hollow silicon nano conical array obtained by the method has the advantages of large area, uniform bottom diameter length, controllable spacing, controllable period and orderly arrangement, has extremely superior broad-band dereflection performance, and effectively reduces the surface reflection loss from deep ultraviolet band to medium infrared band (250 nanometers to 15 mu m). The method is simple and controllable, and has wide application prospect on construction of photoelectric devices with low cost and large area and deflection surfaces.
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Description

Technical field

[0001] The invention relates to a preparation method of a silicon hollow nanocone array, in particular to a preparation method of a silicon hollow nanocone array with a large area, uniform bottom diameter, controllable spacing, controllable period, and orderly arrangement. Background technique

[0002] Silicon is the most important material in the semiconductor industry today. Due to the asymmetry of the silicon nanocone shape and the pointed tip, the array has a wide range of applications, such as anti-reflection coatings, high-efficiency field emission devices, and high-sensitivity sensors , Self-cleaning surface, etc.

[0003] There are roughly three existing methods for preparing silicon nanocone arrays: chemical vapor deposition methods, laser ablation methods, and etching methods. The first two methods are time-consuming, difficult to achieve controllable periodic spacing, and difficult to achieve large-area array construction. Electron beam (E-Beam) etching...

Claims

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