Watt level full solid state ultraviolet laser cleaning machine and laser cleaning method

Abstract

The invention discloses a Watt-level all-solid ultraviolet laser cleaner and a laser cleaning method, which pertains to the optical energy cleaning technology field and are applied to cleaning micro electronic substrate such as the integrated circuit. The power of the cleaner is connected with a laser resonance chamber; two non-linear optical crystals, a selective microscope and a reflector are positioned in the light path of pulsed laser from the laser resonance chamber; a rotating mirror drum is fixed above one side of the reflector; a work piece to be cleaned is arranged on a convey belt; a blower is positioned at one side of the convey belt and a cleaner is arranged at the other side. By adopting the method, substrates to be cleaned can be continuously or discontinuously conveyed to go through the laser which is Watt-level pulse laser with about 266nm and comes from the all-solid laser; proper laser intensity, pulse frequency and irradiation time can be controlled to effectively remove micron and submicron particles, organics, oily contamination, etc. on the surface of the substrate. The adhesion of the coating after cleaning and the product yield rate are greatly improved and the warp or spalling of the coating rarely happens.

Description

technical field [0001] The invention belongs to the scope of light energy cleaning equipment, in particular to a tile-level all-solid-state ultraviolet laser cleaning machine and a laser cleaning method. Background technique [0002] The technology of cleaning pollutants with laser was created in the mid-1970s, but it was not really applied in industrial production until the early 1990s. This is because with the rapid development of the microelectronics industry, the integration of integrated circuits, especially large-scale and ultra-large-scale integrated circuits, is getting higher and higher, and the cleanliness requirements for microelectronic substrates such as silicon wafers are also getting higher and higher. . Traditional cleaning techniques, such as mechanical cleaning, wet chemical cleaning, ultrasonic cleaning, etc. are often powerless to remove micron and submicron pollution particles. In addition, the mechanical removal method is easy to cause damage to the s...

AI Technical Summary

Problems solved by technology

However, because BBO crystals are prone to photorefractive damage under ultraviolet laser irradiation, if the average power of the 266nm laser output after quadruple frequency exceeds 300mW, the BBO crystal will be destroyed

Since the output ultraviolet laser is below the watt level, the application of Nd:YAG and other all-solid-state lasers in the field of high-precision microelectronic substrate cleaning is greatly restricted.

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