Semiconductor material with 110 crystal tropism silicon-containing layer and its forming method

Abstract

Semiconductor material having a <110> crystal orientation silicon-containing layer and method of forming the same, the semiconductor material having enhanced electron and hole mobility, the material comprising a <110> crystal orientation silicon-containing layer under biaxial compressive strain . The term "biaxial compressive strain" is used herein to describe the net stress resulting from the longitudinal compressive stress and the lateral stress introduced on the silicon-containing layer during the fabrication of the semiconductor material. Other aspects of the invention relate to methods of forming the semiconductor materials of the invention. The method of the present invention includes providing a silicon <110> layer; and creating a biaxial strain in the silicon <110> layer.

Description

technical field [0001] The present invention relates to semiconductor materials having enhanced electron-hole mobility, and more particularly to semiconductor materials comprising silicon (Si)-containing layers having enhanced electron-hole mobility. The present invention also provides various methods of forming such semiconductor materials. Background technique [0002] For more than three decades, the continued miniaturization of silicon metal-oxide-semiconductor field-effect transistors (MOSFETs) has driven the semiconductor industry worldwide. For more than thirty years people have predicted fantastic gains in scaling, but a history of innovation has sustained Moore's Law despite many challenges. Today, however, there are increasing signs that metal-oxide-semiconductor (MOS) is starting to hit traditional scaling limits [A brief summary of the short- and long-term challenges to continued complementary metal-oxide-semiconductor scaling can be found at the International T...

AI Technical Summary

Problems solved by technology

Fantastic achievements in scaling have been predicted for over three decades, but a history of innovation has sustained Moore's Law despite many challenges

While this hybrid approach has significant benefits for pFETs, it typically does not benefit nFETs

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