Oxygen-doped modification method of two-dimensional material

A two-dimensional material and oxygen doping technology, which is applied in the field of oxygen doping modification of two-dimensional materials, can solve problems such as the inability to use selective doping, and achieve no secondary pollution, strong universality, and high accuracy. Effect

Active Publication Date: 2019-08-09
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method obviously cannot be used for selective doping, and it can only do chlorine doping on graphene two-dimensional materials but not oxygen doping.

Method used

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  • Oxygen-doped modification method of two-dimensional material
  • Oxygen-doped modification method of two-dimensional material
  • Oxygen-doped modification method of two-dimensional material

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0061] This embodiment provides a method for modifying two-dimensional materials by oxygen doping, the specific steps of which are as follows:

[0062] (1) Mechanically exfoliated MoS 2 2D material transfer to SiO 2 / Si substrate, then with the MoS 2 The substrate of the two-dimensional material is placed on the stage of the laser direct writing system (laser direct writing lithography machine), and the CCD camera is used in conjunction with the moving system of the stage (moving accuracy is 10nm) to find the area to be modified.

[0063] (2) Use the laser direct writing system to carry out laser direct writing in the air according to the set grayscale image in the region to be modified in step (1), set the laser pulse width of the laser direct writing to be 10 ns, and the laser power As the grayscale becomes larger, it increases linearly, 0 grayscale 0 power output, 255 grayscale 100mW power output, and oxygen-doped modified MoS is obtained. 2 2D materials;

[0064] Where...

Embodiment 2

[0072] This embodiment provides a method for oxygen doping modification of two-dimensional materials. Referring to Embodiment 1, the difference is that in this embodiment, the two-dimensional material in step (1) is WSe obtained by chemical vapor deposition. 2 The grayscale image of step (2) is an isosceles right-angled triangle, the grayscale at the apex of the right angle is 0, and the grayscale at the hypotenuse is 255. The grayscale of the grayscale image changes gradually from the apex to the hypotenuse, gradually increasing Large; set the laser pulse width of laser direct writing to 1000ns, the laser power changes linearly with the increase of the gray scale, the power output of 0 gray scale is 36mW, and the power output of 255 gray scale is 80mW. Other specific conditions and parameters are the same as in Example 1.

[0073] In this example, the obtained modified WSe 2 The oxygen-doped modification area of ​​the two-dimensional material is an isosceles right-angled tri...

Embodiment 3

[0075] In this embodiment, the black solid-color rectangular pattern with the same shape and size as the oxygen-doped writing pattern is used instead of the grayscale image, and other specific conditions and parameters are the same as in the embodiment 1.

[0076] In this example, the obtained modified MoS 2 The oxygen-doped modified area of ​​the two-dimensional material is rectangular, and the oxygen-doped content is the same at all points in the doped area, which is the doping of the product in Example 1 corresponding to the position where the gray scale of the grayscale image in Example 1 is 255. The oxygen doping content of the position is the same. The accuracy of the doping position in this embodiment reaches 100 nm.

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Abstract

The invention provides an oxygen-doped modification method of a two-dimensional material. The method comprises the following steps that (1) the two-dimensional material is put in a laser direct writing system, and a positioning system is used for finding a to-be-modified area; (2) the laser direct writing system is used for performing laser direct writing on the to-be-modified area in step (1) according to a set pattern to obtain the oxygen-doped modified two-dimensional material. The to-be-modified area of the two-dimensional material is accurately positioned by using the positioning system,and laser direct writing is carried out on the two-dimensional material according to the pattern, which can achieve the oxygen-doped modification on a selected area, but does not affect other areas, and the accuracy of the oxygen-doped modification method reaches 100 nanometers; by using a grey-scale map and according to different gray scales of the grey-scale map, lasers of different kinds of energy are used for laser direct writing separately to achieve that different doping positions have different oxygen doping amounts so that the oxygen doping amounts in one pattern can change continuously to achieve controllable gradient oxygen doping.

Description

technical field [0001] The invention belongs to the field of two-dimensional material preparation, and relates to a modification method of a two-dimensional material, in particular to an oxygen doping modification method of a two-dimensional material. Background technique [0002] Oxygen doping of 2D materials is one of the important strategies to modify and enhance the device performance of 2D materials. Oxygen holes in two-dimensional materials often determine the concentration of carriers, thereby determining the carrier transport characteristics in the material, such as the switching characteristics of memristive materials, the luminescent properties of doped modified PN junctions, etc. A variety of doping techniques have been developed so far to effectively improve the optoelectronic properties of organic semiconductors, carbon nanotubes (CNTs), graphene, etc. At present, the research on doping-based two-dimensional layered materials has become one of the most interest...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/06C01G41/00C01G47/00C01B19/00C01B19/04
CPCC01B19/002C01B19/007C01G39/06C01G41/00C01G41/006C01G47/00C01G47/006C01P2004/20
Inventor 杨奉佑陈胜垚王晓丰刘前
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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