Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as changes in conductivity of oxide semiconductors
CN102859705AActive Publication Date: 2013-01-02SEMICON ENERGY LAB CO LTD
7 Cites 4 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON ENERGY LAB CO LTD
Publication Date
2013-01-02

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.
Need to check novelty before this filing date? Find Prior Art

Description

Technical field

[0001] The present invention relates to a semiconductor device and a manufacturing method of the semiconductor device.

[0002] In this specification, semiconductor devices generally refer to all devices that can operate by utilizing semiconductor characteristics, and therefore electro-optical devices, semiconductor circuits, and electronic equipment are all semiconductor devices. Background technique

[0003] The technology of forming a transistor using a semiconductor thin film formed on a substrate with an insulating surface has attracted attention. This transistor is widely used in electronic equipment such as integrated circuits (ICs) and image display devices (display devices). As a semiconductor thin film material that can be applied to transistors, silicon-based semiconductor materials are widely known. However, as other materials, oxide semiconductors are attracting attention.

[0004] For example, a transistor has been disclosed in which the active layer ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More