Selenide forerunner thin film and method for producing film cell through rapid selenium vulcanizing thermal treatment
A thin-film solar cell and selenide technology, which is applied in the field of compounding, can solve the problems of the difficulty of toxic gas, the low current density of the selenide film, and the influence of the pn junction quality of the thin-film surface structure battery.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0039] When making CuInSe with nano-selenide coating 2-x S x For thin-film solar cells, the alkali barrier layer and the Mo back electrode film are sputtered on the surface of the SLG substrate respectively, and the selenide coatings CuSe, In 4 Se 3 (or In 2 Se 3 ) and CuSe each once, the present invention prefers selenium-poor In 4 Se 3 (melting point 520°C) nano-coating; drying immediately after each roll coating, the selenide precursor film presents CuSe / In 4 Se 3 (or In 2 Se 3 ) / CuSe structure, total Cu / In of the film>1.06, CuSe on the surface>CuSe on the bottom, the optimum ratio is 1.1~1.5, and the total thickness after drying is about 4~7μm (the thickness of the absorbing layer prepared after the final rapid selenium vulcanization heat treatment is required to be about 0.9 ~1.8μm), the composition structure ratio of the three-layer selenide film is about 4:10:6.1, before the precursor selenide film is dried for the last time, a certain amount of sodium salt nee...
Embodiment 2
[0045] When making CuIn with nano-selenide coating 0.7 Ga 0.3 Se 2-x S x For thin-film solar cells, four nano-selenide coatings are required, which are: (CuSe+CuGaSe 2 ), Ga 2 Se 3 、In 4 Se 3(or In 2 Se 3 +CuInSe 2 ), CuSe, adjust them to the appropriate viscosity respectively, continuously implement roll coating and drying on the substrate Mo thin film, four kinds of selenide coatings can be continuously formed into films at one time, and its precursor selenide thin film structure is: ( CuSe+CuGaSe 2 ) / Ga 2 Se 3 / In 4 Se 3 (or In 2 Se 3 +CuInSe 2 ) / CuSe, the total Cu / (In+Ga) of the film>1.06, the atomic structure ratio of the four-layer film composition is: (4+4):1:3.5:12.1, the thickness of the precursor selenide film is about 4-7μm, and the film The composition ratio of each element in Ga / (In+Ga)≥0.3, Se / Mbottom CuSe. The feature of this CIGS thin film battery is that the gallium element in the selenide precursor film is concentrated on the bottom layer, ...
Embodiment 3
[0047] Preparation of CuInSe by Electrochemical Deposition of Selenide Precursor Thin Film 2-x S x Thin film solar cells. The ratio of the electrodeposition solution components is: 2.6mMol L -1 CuCl 2 2H 2 O, 9.6mMol L -1 InCl 3 and 5.5mM ol·L -1 h 2 SeO 3 , LiCl0.236Mol L -1 ; And add ph=3 buffer composed of potassium hydrogen phthalate and sulfamic acid to measure the pH~2.6 of the electroplating solution, adopt a three-electrode constant potential system, and the reference electrode is a saturated calomel electrode (SCE). Put the SLG substrate with the alkali barrier layer and the Mo back electrode film deposited by sputtering into the above-mentioned electroplating solution, pre-treat the Mo back electrode film of the substrate at -0.5V for 1 minute, and rinse the substrate with deionized water after taking it out. Blow dry with pure nitrogen, put it aside for a certain period of time, put it into the electroplating solution again for electrodeposition, first pre...
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com