The invention provides a method for analyzing the optimal
energy interval of 4H-SiC
femtosecond laser processing, and belongs to the technical field of
engineering optics based on
computer data processing. The method comprises the following steps: firstly, respectively simulating evolution of
electron density, lattice temperature and
electron temperature under
irradiation by constructing a
rate equation of a three-dimensional model and
electron density accumulation and a double-temperature model, and determining a lattice modification threshold value and an
ablation threshold value; then, a plurality of experimental data points are selected in the interval for single-pulse
laser processing, a conventional characterization means is used for counting the surface appearance, the removal depth and the removal
radius of each
data point, and the accuracy and the non-thermal removal threshold value of the model are calculated and determined by observing the number of splashing particles on the surface and the appearance edge flux. And further determining an optimal
structure modification energy interval, a cold
processing interval and a
thermal ablation processing interval of the 4H-SiC. According to the method, less sample damage test times are used, the sample
utilization rate is increased, the research period is shortened, and flux screening of optimal
laser processing is accelerated.