The invention discloses a
threshold voltage drift and
recovery monitoring circuit for a
gallium nitride power device under various electric stresses, and relates to the technical field of
gallium nitride power device testing. The circuit comprises a power supply module, a driving
chip, a switch tube S1, a switch tube S2, a
gallium nitride device to be measured, a load
resistor R1, a
discharge diode D1, an
energy storage capacitor C2 and a
voltage monitoring unit, and through on-off combination of the driving module and the MOS tube S2, measurement of device
threshold voltage drift and
recovery after three stresses (gate stress, off-state drain stress and switch stress) can be realized. A
resistive load method is adopted,
triangular wave grid voltage is generated by means of an
energy storage capacitor, drain-source
voltage and grid-source
voltage are synchronously monitored to achieve
threshold voltage extraction, and a precise source table is not needed; rapid discharging is achieved through the discharging
diode, and the
mode switching efficiency is improved. The circuit has the advantages that the threshold voltage drift test of a device under three typical stresses when the device works in an actual converter can be simulated, in addition, compared with the traditional threshold voltage drift test, the circuit can also realize the
recovery test after the threshold voltage drift of the device, and the
test efficiency is improved. The method has great value for fully researching the threshold voltage drift recovery characteristic of the device under the typical working condition.